Ag层沉积速率对SnO_2/Ag/SnO_2三层膜透明导电性能的影响
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摘要
以射频磁控溅射方法在两种沉积速率下(0.065和0.750 nm/s)制备单层Ag膜,研究了沉积速率对Ag膜结构的影响。以同样的两种速率制备Ag层,并变化Ag层厚度,研究了制备的SnO_2/Ag/SnO_2 3层膜的透明导电性能。结果发现:高速沉积的Ag膜晶粒粗大、表面粗糙度低,也即其结晶性更好且易于连续成膜,该结果很好地解释了当Ag层膜厚较薄时(<6 nm),高速沉积Ag层制备的SnO_2/Ag/SnO_2 3层膜表现出更高的品质因子。当Ag层膜厚较厚时(>6 nm),低速沉积Ag层制备的3层膜的品质因子更高,并且在Ag层厚度为8 nm时获得的最高的品质因子(4.73×10~(-2)/Ω),大于Ag层高速沉积且膜厚为6 nm时,获得的最高品质因子(3.45×10~(-2)/Ω),这可能与Ag层较厚时,粗糙表面的Ag层表现出更高的透光性有关。
Ag films were prepared at two deposition rates(i.e., 0.065 and 0.750 nm/s), and the effect of deposition rate on the structure of Ag films was investigated. SnO_2/Ag/SnO_2 tri-layer films with Ag layer deposited at two deposition rates were prepared,and their transparent conductive properties with respect to the effect of Ag layer thickness were investigated. The results indicate that the Ag film deposited at a higher deposition rate has a larger crystallite size and a lower surface roughness. That is, the films have higher crystallinity, and the continuous film can be formed more easily. SnO_2/Ag/SnO_2 tri-layer films with Ag layer deposited at a higher deposition rate exhibit a higher figure of merit(FOM) at a thinner thickness of Ag layer(<6 nm). At a thicker thickness of Ag layer(>6 nm), tri-layer films with Ag layer deposited at a lower deposition rate exhibit a higher FOM, and the maximum FOM(4.73×10~(-2)/Ω) obtained at Ag layer thickness of 8 nm is greater than that of tri-layer films with Ag layer deposited at higher deposition rate(i.e., 3.45×10~(-2)/Ω). This unexpected result may be related to the fact that Ag layer with a rough surface has a higher transmittance at a greater Ag layer thickness.
Ag films were prepared at two deposition rates(i.e., 0.065 and 0.750 nm/s), and the effect of deposition rate on the structure of Ag films was investigated. SnO_2/Ag/SnO_2 tri-layer films with Ag layer deposited at two deposition rates were prepared,and their transparent conductive properties with respect to the effect of Ag layer thickness were investigated. The results indicate that the Ag film deposited at a higher deposition rate has a larger crystallite size and a lower surface roughness. That is, the films have higher crystallinity, and the continuous film can be formed more easily. SnO_2/Ag/SnO_2 tri-layer films with Ag layer deposited at a higher deposition rate exhibit a higher figure of merit(FOM) at a thinner thickness of Ag layer(<6 nm). At a thicker thickness of Ag layer(>6 nm), tri-layer films with Ag layer deposited at a lower deposition rate exhibit a higher FOM, and the maximum FOM(4.73×10~(-2)/Ω) obtained at Ag layer thickness of 8 nm is greater than that of tri-layer films with Ag layer deposited at higher deposition rate(i.e., 3.45×10~(-2)/Ω). This unexpected result may be related to the fact that Ag layer with a rough surface has a higher transmittance at a greater Ag layer thickness.
引文
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[2]ZHU R,CHUNG C H,CHA K C,et a1.Fused silver nanowires with metal oxide nanoparticles and organic polymers for highly transparent conductors[J].ACS Nano,2011,5(12):9877-9882.
[3]YU S H,ZHANG W F,LI L X,et al.Transparent conductive Sb-doped SnO2/Ag multilayer films fabricated by magnetron sputtering for flexible electronics[J].Acta Mater,2013,61(14):5429-5436.
[4]AOUAJ A,ABDLEFDIL,MOURSLI C E,et al.Ag/ITO transparent conducting oxides[J].Eur Phys J:Appl Phys,2007,40(1):55-58.
[5]SAHU D R,LIN S Y,HUANG J L.Investigation of conductive and transparent Al-doped ZnO/Ag/Al-doped ZnO multilayer coatings by electron beam evaporation[J].Thin Solid Films,2008,516(15):4728-4732.
[6]DING G W,CLAVERO C,DANIEL S,et al.Thickness and microstructure effects in the optical and electrical properties of silver thin films[J].AIP Adv,2015,5(11):117234-117244.
[7]赵青南,马鸣明,董玉,等.玻璃基Ag膜层厚度与其表面形貌和性能的关系[J].武汉理工大学学报,2009,3(4):75-79.ZHAO Q N,MA M M,DONG Y,et al.J Wuhan Univ Technol(in Chinese),2009,3(4):75-79.
[8]ZHANG C,ZHAO D,GU D,et al.An ultrathin,smooth,and low-loss Al-doped Ag film and its application as a transparent electrode in organic photovoltaics[J].Adv Mater,2014,26(32):5696-5701.
[9]GU D,ZHANG C,WU Y K,et al.Ultrasmooth and thermally stable silver-based thin films with subnanometer roughness by aluminum doping[J].ACS Nano,2014,8(10):10343-10351.
[10]LIU Y,GUO C F,HUANG S,et al.A new method for fabricating ultrathin metal films as scratch-resistant flexible transparent electrodes[J].J Materiomics,2015,1(1):52-59.
[11]FORMICA N,GHOSH D S,CARRILERO A,et al.Ultrastable and atomically smooth ultrathin silver films grown on a copper seed layer[J].ACS Appl Mater Interface,2013,5(8):3048-3053.
[12]CHARTON C,FAHLAND Mfaces.Electrical properties of Ag films on polyethylene terephthalate deposited by magnetron sputtering[J].Thin Solid Films,2004,449(1/2):100-104.
[13]YU S H,ZHANG W F,LI L X,et al.Optimization of SnO2/Ag/SnO2tri-layer films as transparent composite electrode with high figure of merit[J].Thin Solid Films,2014,552(4):150-154.
[14]KHAN I A,HASSAN M,AHMAD R,et al.Nitridation of zirconium using energetic ions from plasma focus device[J].Thin Solid Films,2008,516(23):8255-8263.
[15]DRUSEDAU T P,BOCK T,JOGH T M,et al.Energy transfer into the growing film during sputter deposition:An investigation by calorimetric measurements and Monte Carlo simulations[J].J Vac Sci Technol A,1999,17(5):2896-2905.
[16]WANG L W,LI L,CHEN W D.Investigation of the properties of silver thin films deposited by DC magnetron sputtering[J].Surf Rev Lett,2017,24(4):1750053-1750060.
[17]HONG C H,JO Y J,KIM H A,et al.Effect of electron beam irradiation on the electrical and optical properties of ITO/Ag/ITO and IZO/Ag/IZO films[J].Thin Solid Films,2011,519(20):6829-6833.
[18]KUMAR G,LI Y D,BIRING S,et al.Highly efficient ITO-free organic light-emitting diodes employing a roughened ultra-thin silver electrode[J].Org Electron,2017,42:52-58.
[19]CATTIN L,LARE Y,MAKHA M,et al.Effect of the Ag deposition rate on the properties of conductive transparent Mo O3/Ag/MoO3,multilayers[J].Sol Energy Mater Sol C,2013,117(4):103-109.