一种适用于LED驱动的高压稳压电路设计
|
摘要
在LED驱动电路中,若采用传统的BUCK型DC-DC降压方式或利用MOS管级联钳制降压方式为芯片内部低压模块提供电源,存在不易集成化和受高压工艺限制等问题。为此,提出了一种改进的高压稳压电路,利用高压LDMOS构成电流源对RC电路充电,电容上的电压经过线性稳压器稳压后给芯片提供稳定的低压电源。该电路只需外置电容,其他部分均可集成在一块芯片上。基于华虹宏力0.5μm 700V BCD工艺对电路进行仿真验证,在0~311 V周期脉动高电压输入条件下,电路能稳定输出4.97 V;负载电流在0~10 mA范围内变化,负载调整率为11.6 mV/mA;在-40℃~130℃温度范围内,输出电压温度系数为27.2 ppm/℃。仿真结果表明,该高压稳压电路各指标参数均满足预期要求。
In LED driving chips, traditional high- voltage regulator, which uses buck DC- DC converter or cascade clamp of MOS-FET to drop the high- input voltage to the power supply for internal low voltage modules is seriously affected by the high- voltage process and not easily integrated. In this paper, an improved high- voltage regulator was proposed. This regulator uses a current mirror composed by LDMOS to charge a RC circuit. The voltage on the capacitor is regulated by a linear regulator to provide a stable low voltage power supply. Therefore, the LED driving circuit can be integrated in a monolithic chip except the capacitor.This high-voltage regulator was simulated based on the HG 0.5 μm 700 V BCD process. The simulation result shows that the out put voltage is 4. 97 V under the condition of pulse high voltage for 0 ~ 311 V period. The output voltage fluctuation value is 0. 116 V and the load regulation is 11. 6 m V / m A in the load current of 0 ~ 10 m A. The temperature coefficient is 27. 2 ppm / ℃ within- 40 ℃~ 130 ℃. The simulated results indicate that all parameters of this high- voltage regulator are validated.
In LED driving chips, traditional high- voltage regulator, which uses buck DC- DC converter or cascade clamp of MOS-FET to drop the high- input voltage to the power supply for internal low voltage modules is seriously affected by the high- voltage process and not easily integrated. In this paper, an improved high- voltage regulator was proposed. This regulator uses a current mirror composed by LDMOS to charge a RC circuit. The voltage on the capacitor is regulated by a linear regulator to provide a stable low voltage power supply. Therefore, the LED driving circuit can be integrated in a monolithic chip except the capacitor.This high-voltage regulator was simulated based on the HG 0.5 μm 700 V BCD process. The simulation result shows that the out put voltage is 4. 97 V under the condition of pulse high voltage for 0 ~ 311 V period. The output voltage fluctuation value is 0. 116 V and the load regulation is 11. 6 m V / m A in the load current of 0 ~ 10 m A. The temperature coefficient is 27. 2 ppm / ℃ within- 40 ℃~ 130 ℃. The simulated results indicate that all parameters of this high- voltage regulator are validated.
引文
[1]刘浩,陈志,葛佳乐,等.一种宽电压输入范围降压电路的设计[J].微电子学,2011,41(1):54-55.
[2]董双兵,戴宇杰,张小兵,等.一种预稳压的高压线性稳压器的设计[J].南开大学学报,2010,43(6):82-86.
[3]季翔宇,杨依忠,陈峰.一种宽输入降压稳压电路的研究与设计[J].合肥工业大学学报,2013,36(7):795-797.
[4]陈志军,钟昌贤,张波.一种用于离线式开关电源的内部电源电路[J].中国集成电路,2006,87:18-21.
[5]康华光,陈大钦,张林.电子技术基础[M].北京:高等教育出版社,2006.
[6]ALLEN P E,BLALOCK B J,RINCON G A.A CMOS opam using bulk-driven MOSFETs[J].IEEE Transactionson Systems,2013,38(5):192-193.
[7]何乐年,王义.模拟集成电路设计与仿真[M].北京:科学出版社,2008.
[8]ANDREOUC M,KOUDOUNAS S,GEORGIOU J.A novel wide-temperature-range,3.9 ppm/℃CMOS bandgap reference circuit[J].IEEE Journal of Solid State Circuits,2012,47(2):574-581.
[9]VAISBAND I,FRIEDMANE G.Stability of distributed power delivery systems with multiple parallel on-chip LDO regulators[J].IEEE Transactions on Power Electronics,2016,31(8):5625-5634.
[10]金岩.一种低功耗高稳定性LDO线性稳压器的设计[D].苏州:苏州大学,2015.
[2]董双兵,戴宇杰,张小兵,等.一种预稳压的高压线性稳压器的设计[J].南开大学学报,2010,43(6):82-86.
[3]季翔宇,杨依忠,陈峰.一种宽输入降压稳压电路的研究与设计[J].合肥工业大学学报,2013,36(7):795-797.
[4]陈志军,钟昌贤,张波.一种用于离线式开关电源的内部电源电路[J].中国集成电路,2006,87:18-21.
[5]康华光,陈大钦,张林.电子技术基础[M].北京:高等教育出版社,2006.
[6]ALLEN P E,BLALOCK B J,RINCON G A.A CMOS opam using bulk-driven MOSFETs[J].IEEE Transactionson Systems,2013,38(5):192-193.
[7]何乐年,王义.模拟集成电路设计与仿真[M].北京:科学出版社,2008.
[8]ANDREOUC M,KOUDOUNAS S,GEORGIOU J.A novel wide-temperature-range,3.9 ppm/℃CMOS bandgap reference circuit[J].IEEE Journal of Solid State Circuits,2012,47(2):574-581.
[9]VAISBAND I,FRIEDMANE G.Stability of distributed power delivery systems with multiple parallel on-chip LDO regulators[J].IEEE Transactions on Power Electronics,2016,31(8):5625-5634.
[10]金岩.一种低功耗高稳定性LDO线性稳压器的设计[D].苏州:苏州大学,2015.