微带线不连续性对光电导开关非线性特性的影响
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摘要
实验对全固态同轴!微带型横向半绝缘砷化镓(SI-GaAs)光电导开关传输特性进行了研究:当偏置电压达到一定阈值时,普通开关进入了非线性锁定(Lock-on)工作模式;在相同实验条件下,当微带线出现不连续时,输出的电脉冲波形没有出现锁定现象;分别用空气击穿的流注模型和微带线等效电容机理分析了微带线不连续效应引起整个开关电路性能变化及抑制开关Lock-on效应的原因。
The transmission characteristic of all-solid state coaxial-microstrip type semi-insulating(SI) GaAs photoconductive switch was investigated experimentally.The experiment result showed that the ordinary switch would come into non-linear(Lock-on) mode as the bias voltage reached certain threshold.Under the same experimental condition,electric pulse waveform did not appear Lock-on phenomenon when microwave transmission lines were discontinuous.The switch performance change and suppressing Lock-on effect,which attributed to discontinuous microwave transmission lines,were analyzed based on streamer model of air breakdown and microwave transmission line of equivalent capacitance respectively.
The transmission characteristic of all-solid state coaxial-microstrip type semi-insulating(SI) GaAs photoconductive switch was investigated experimentally.The experiment result showed that the ordinary switch would come into non-linear(Lock-on) mode as the bias voltage reached certain threshold.Under the same experimental condition,electric pulse waveform did not appear Lock-on phenomenon when microwave transmission lines were discontinuous.The switch performance change and suppressing Lock-on effect,which attributed to discontinuous microwave transmission lines,were analyzed based on streamer model of air breakdown and microwave transmission line of equivalent capacitance respectively.
引文
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[3]Jin G P,Zhang D L,Li R L,et al.Optically Controlled Reconfigurable Antenna for Cognitive Radio Applications[J].Electronics Letters,2011,47(17):948-950.
[4]Lee C H.Picosecond Optoelectronic Switching in Ga As[J].Applied Physics Letters,1977,30(2):84-86.
[5]Suen J Y,Li W,Taylor Z D,et al.Characterization and Modeling of a Terahertz Photoconductive Switch[J].Applied Physics Letters,2011,96(14):11031-11034.
[6]Shi Wei,Tian Liqiang.Mechanism Analysis of Periodicity and Weakening Surge of Ga As Photoconductive Semiconductor Switches[J].Applied Physics Letters,2006,89(20):21031-21033.
[7]Shi Wei,Qu Guanghui,Xu Ming,et al.Current Limiting Effects of Photoactivated Charge Domain in Semi-Insulating Ga As Photoconductive Switch[J].Applied Physics Letters,2009,94,072110.
[8]Jiang Zenggong,Shi Wei,Hou Lei,et al.Effect of Current Filament Characteristics on the Output Current of High-Gain Photoconductive Semiconductor Switch[J].Applied Physics Letters,2012,101,192104:1-5.
[9]Shi Wei,Ma Xiangrong.Peculiar Transmission Characteristics for the Large Gap Semi-Insulating Ga As Photoconductive Switch[J].Chinese Physics Letters,2011,28(12):42011-42014.
[10]Ma Xiangrong,Shi Wei,Ji Weili,et al.The Overvoltage LSA Relaxation Mode Studies in Photoconductive Semiconductor Switch[C]//International Symposium on Photonics and Optoelectronics,SOPO 2010,5504:407-410.
[11]马湘蓉,施卫,薛红,等.沿面闪络和丝状电流对光电导开关的损伤机理[J].电工技术学,2010,25(10):129-135.
[12]Yuan Jianqiang,Liu Hongwei,Liu Jinfeng,et al.Peculiar Photoconductivity in High-Power Semi-Insulating Ga As Photoconductive Semiconductor Switch[J].IEEE Transactions on Plasma Science,2010,38(12):3460-3463.
[13]Steven F,Zutavern F J,Michael J Cich,et al.Pulsed-and DCCharged PCSS-Based Trigger Generators[J].IEEE Transactons on Plasma Science,2010,38(10),2701-2707.
[14]Kambour K,Kang S,Myles C W,et al.Steady-State Properties of Lock-on Current Filaments in Ga As[J].IEEE Transactions on Plasma Science,2000,28(5):1497-1499.
[15]Zhu L,Bu H.Broadband and Compact Multi-Pole Microstrip Band Pass Filters using Ground Plane Aperture Technique[J].IEEE Pro-Microwave Antennas Propagate,2002,149(1):71-77.
[16]Zhu L,Wu K.Multilayered Coupled-Microstrip Lines Technique with Aperture Compensation for Innovative Planar Filter Design[J].Proceedings of Asia-Pacific Microwave Conference,1999:303-306.
[17]Martel J,Medina F,Horno M.Microstrip Bandstop Filters using Cross-Over Capacitive Coupling[J].Electronics Letters.1998,34(9):867-868.
[18]Hindy M A,Stuffle R E,Laub L R,et al.High Speed Microstrip Switching[M]//Proceedings of the 31st Midwest Symposium on Circuits and Systems,Elsevier,New York,1988:708-711.
[19]Mitkees A A,Hindy M A,Hamdy S.Microstrip Phase Shifter Element on Ferrite Substrate[C]//Proceedings of the 31st Midwest Symposium on Circuits and Systems,1990,1:350-353.
[20]D’yakonov M I,Kachorovskii V Y.Theory of Streamer Discharge in Semiconductor[J].Sov Phys JETP,1988,67(5):1049-1054.
[21]Shi Wei.Optically Activated Charge Domain Model for High-Gain Ga As Photoconductive Switches[J]Chinese Journal of Semiconductors,2001,(22)12:1481-1485.
[22]Edwards T C.Foundations for Microstrip Circuit Design[M].New York:Wiley,1981:184.