摘要
利用水热法在PET-ITO柔性衬底上制备铝(Al)掺杂的ZnO纳米棒(ZnO∶Al)。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、I-V特性测试等分析了合成纳米材料的微观形貌、晶体结构、电学性能。结果表明,掺杂Al时对ZnO纳米棒生长有直接的影响。构建了添加Alq_3为绝缘层的PET-ITO/ZnO纳米棒/Alq_3/AgMIS(金属M-绝缘体I-半导体S)器件,并对其电学性能深入研究,实验表明该器件对整流特性有良好反应。
The aluminum(Al) doped zinc oxide(ZnO) nanorods have been prepared on PET-ITO flexible substrate by hydrothermal method.The Microstructure, crystal structure and electrical properties of Al doped ZnO nanorods were characterized by XRD, SEM, TEM and current-voltage(I-V) test. The results showed that the growth of ZnO nanorods was directly affected by doping Al. We constructed the PET-ITO/ZnO nanorods/Alq_3/Ag MIS devices, which use Alq_3 as the insulating layers,and studied its electrical properties. The result showed a typical rectifying current voltage behavior.
引文
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