六方氮化硼二维材料的制备及光电特性的研究进展
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摘要
介绍了六方氮化硼(h-BN)材料的几种主要制备方法,如剥离法、化学气相沉积法、水热法等,并讨论了各种制备方法的特点。同时展示了以h-BN二维材料制备的晶体管的特性,发现其具有良好的电学和放大特性。综述了h-BN与石墨烯、硫化钼等其他二维材料构成的异质结的光电特性,因为h-BN带隙宽,与其他二维材料形成的异质结势垒高度增加,载流子复合速率降低,使光电流响应率增加,响应时间减小,从而使器件的频率特性得到显著提升。这些优异特性可用于制备光电探测器和太阳能电池等高效率的纳米光电子器件。最后,还对h-BN未来的发展方向进行了展望,其制备工艺和应用领域还有待进一步深入拓展。
Several major preparation methods of hexagonal boron nitride materials,such as stripping method,chemical vapor deposition,hydrothermal method were first introduced,and discussed the characteristics of various methods.At the same time,the characteristics of transistor fabricated with the h-BN two-dimensional material were demonstrated,and it was found that it had good electrical and amplifying characteristics.In addition,the photoelectric properties of heterojunction composed of h-BN and other two-dimensional materials such as graphene and molybdenum sulfide were also reviewed.Because h-BN had wide band gap which can increase the potential barrier height of heterojunction,and decreased the carrier recombination rate,then improved the response rate of photocurrent and decreased the response time,leading to the remarkable enhancement of frequency characteristics of devices.These excellent characteristics can be used for the preparation of high efficiency photodetectors,solar cells and other high efficiency nano optoelectronic devices.Finally,the prospect of boron nitride in the future development was outlined,the development of preparation technology and application area was also needed in further.
Several major preparation methods of hexagonal boron nitride materials,such as stripping method,chemical vapor deposition,hydrothermal method were first introduced,and discussed the characteristics of various methods.At the same time,the characteristics of transistor fabricated with the h-BN two-dimensional material were demonstrated,and it was found that it had good electrical and amplifying characteristics.In addition,the photoelectric properties of heterojunction composed of h-BN and other two-dimensional materials such as graphene and molybdenum sulfide were also reviewed.Because h-BN had wide band gap which can increase the potential barrier height of heterojunction,and decreased the carrier recombination rate,then improved the response rate of photocurrent and decreased the response time,leading to the remarkable enhancement of frequency characteristics of devices.These excellent characteristics can be used for the preparation of high efficiency photodetectors,solar cells and other high efficiency nano optoelectronic devices.Finally,the prospect of boron nitride in the future development was outlined,the development of preparation technology and application area was also needed in further.
引文
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[39] Li Xiaoqiang,Lin Shisheng,Lin Xing,et al.Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector[J].Optics Express,2016,24(1):134-135.
[2] Song Xiuju,Gao Teng,Nie Yufeng,et al.Seed-assisted growth of single-crystalline patterned graphene domains on hexagonal boron nitride by chemical vapor deposition[J].Nano Lett,2016,16(10):6109-6116.
[3] Lu Guangyuan,Wu Tianru,Yang Peng,et al.Synthesis of high-quality graphene and hexagonal boron nitride monolayer in-plane heterostructure on Cu-Ni alloy[J].Advanced Science,2017,4(9):1700076.
[4] Lou Xiaoming,Huang Jiali,Li Tanping,et al.Hydrothermal synthesis of Fe3O4andα-Fe2O3nanocrystals as anode electrode materials for rechargeable Li-ion batteries[J].Journal of Materials Science:Mater Electron,2014,25:1193-1196.
[5] Lei Weiwei,Liu Dan,Chen Ying.Highly crumpled boron nitride nanosheets as adsorbents:scalable solvent-less production[J].Advanced Materials Interfaces,2015,2(3).
[6] Pervaiz Ahmad,Mayeen Uddin Khandaker,Ziaul Raza Khan,et al.A simple technique to synthesize pure and highly crystalline boron nitride nanowires[J].Ceramics International,2014,40(9):14727-14732.
[7] Razieh Beiranvand,Shahoo Valedbagi.Electronic and optical properties of h-BN nanosheet:a first principles calculation[J].Diamond&Related Materials,2015,58:190-195.
[8] Li Liang,Wang Weike,Chai Yang,et al.Few-layered PtS2phototransistor on h-BN with high gain[J].Advanced Functional Materials,2017,27(27):1-15.
[9] Akihisa Saito,Tomoki Ayano,Shintaro Nomura.Photoresponse in h-BN/MoS2/h-BN thin-film transistor[J].Japanese Journal of Applied Physics,2018,57(4):045201.
[10] Liu Heng,Meng Junhua,Zhang Xingwang,et al.High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride[J].Nanoscale,2018,10:5559-5565.
[11] Wang Gaoxue,Ravindra Pandey,Shashi P,et al.Physics and chemistry of oxidation of two-dimensional nanomaterials by molecular oxygen[J].Wiley Interdisciplinary Reviews:Computational Molecular Science,2017,7(1):1-16.
[12] Achim Woessner,Romain Parret,Diana Davydovskaya,et al.Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride[J].Physics,2017:1-7.
[13] Xu Zhijuan,Lin Shisheng,Li Xiaoqiang,et al.Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity[J].Nano Energy,2016,23:89-96.
[14] Patil I M,Lokanathan M,Ganesan B,et al.Carbon nanotube/boron nitride nanocomposite as a significant bifunctional electrocatalyst for oxygen reduction and oxygen evolution reactions[J].Chemistry,2017,23(3):676-683.
[15] Yao Yunjin,Chen Hao,Qin Jiacheng,et al.Iron encapsulated in boron and nitrogen codoped carbon nanotubes as synergistic catalysts for Fenton-like reaction[J].Water Research,2016,101:281-291.
[16] Indrajit M Patil,Chamundi P Jijil,Moorthi Lokanathan,et al.Mechanical activation in reduced graphite oxide/boron nitride nanocomposite electrocatalysts for significant improvement in dioxygen reduction[J].Sustainable Energy Fuels,2018,2:252-261.
[17] Indrajit M Patil,Moorthi Lokanathan,Bhalchandra Kakade.Three dimensional nanocomposite of reduced graphene oxide and hexagonal boron nitride as an efficient metal-free catalyst for oxygen electroreduction[J].Journal of Materials Chemistry A,2016,4:4506-4515.
[18] Guo Wanlin,Yin Jun,Qiu Hu,et al.Friction of low-dimensional nanomaterial systems[J].Friction,2014,2(3):209-225.
[19] Zhang Chunli,He Yi,Li Fei,et al.H-BN decorated with Fe3O4nanoparticles through mussel-inspired chemistry of dopamine for reinforcing anticorrosion performance of epoxy coatings[J].Journal of Alloys and Compounds,2016,685:743-751.
[20] Liu Yinghua,Duan Wenxiu,Song Wei,et al.Red emission b,n,s-co-doped carbon dots for colorimetric and fluorescent dual mode detection of Fe3+ions in complex biological fluids and living cells[J].Applied Materials Interfaces,2017,9(14):12663-12672.
[21] PaciléD,Meyer J C,Girit,et al.The two-dimensional phase of boron nitride:few-atomic-layer sheets and suspended membranes[J].Applied Physics Letters,2008,92(13):133107-1-3.
[22] Wu Xiangfeng,Zhao Zehua,Sun Yang,et al.Few-layer boron nitride nanosheets:preparation,characterization and application in epoxy resin[J].Ceramics International,2017,43(2):2274-2278.
[23]王驰,孙妮娟,张娟,等.基于低温化学气相沉积法的碳化硅纤维表面氮化硼涂层制备及表征[J].科学通报,2016,61(22):2536-2542.
[24]杨鹏,吴天如,王浩敏,等.化学气相沉积法在Cu-Ni合金衬底上生长多层六方氮化硼[J].科学通报,2017,62(20):2279-2286.
[25] Zhou Haiqing,Zhu Jixin,Liu Zheng,et al.High thermal conductivity of suspended few-layer hexagonal boron nitride sheets[J].Nano Research,2014,7(8):1232-1240.
[26] Zahra Rafiei-Sarmazdeh,Seyed Hassan Jafari,Seyed Javad Ahmadi,et al.Large-scale exfoliation of hexagonal boron nitride with combined fast quenching and liquid exfoliation strategies[J].Journal of Materials Science,2016,51(6):3162-3169.
[27] Chen Yabin,Feng Ke,Peng hongci,et al.Pressurizing fieldeffect transistors of few-layer MoS2in a diamond anvil cell[J].Nano Letters,2017,17(1):194-199.
[28] Gaurav Nanda,Gregor Hlawacek,Srijit Goswami,et al.Electronic transport in helium-ion-beam etched encapsulated graphene nanoribbons[J].Carbon,2017,119:419-425.
[29] Zhu Chaosheng,Zheng Jingtang,Fang Liyang,et al.Advanced visible-light driven photocatalyst with enhanced charge separation fabricated by facile deposition of Ag3PO4nanoparticles on graphene-like h-BN nanosheets[J].Journal of Molecular Catalysis A:Chemical,2016,424:135-144.
[30] Doan T C,S Majety,Grenadier S,et al.Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers[J].Nuclear Instruments and Methods in Physics Research A,2014,748:84-90.
[31] Obafunso A Ajayi,Jenny V Ardelean,Gabriella D Shepard,et al.Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers[J].2D Materials,2017,4(3):031011.
[32] Seo-Hyeon Jo,Dong-Ho Kang,Jaewoo Shim,et al.A highperformance WSe2/h-BN photodetector using a triphenylphosphine(PPh3)-based n-doping technique[J].Advanced Materials,2016:1-8.
[33] Massicotte M,Schmidt P,Vialla F,et al.Picosecond photoresponse in van der Waals heterostructures[J].Nature Nanotechnology,2016,11(1):42-46.
[34] Wu Wen,Lv Xiaomeng,Wang Jiaxi,et al.Integrating AgI/AgBr biphasic heterostructures encased by few layer h-BN with enhanced catalytic activity and stability[J].Journal of Colloid and Interface Science,2017,496:434-445.
[35] Gu Jiemin,Yan Jia,Chen Zhigang,et al.Construction and preparation of novel 2Dmetal-free few-layer BN modified graphene-like g-C3N4 with enhanced photocatalytic performance[J].Dalton Trans,2017,46:11250-11258.
[36] Lu Yanghua,Wu Zhiqian,Xu Wenli,et al.ZnO quantum dotdoped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity[J].Nanotechnology,2016,27(48):1-7.
[37] Wu Zhiqian,Li Xiaoqiang,Zhong Huikai,et al.Graphene/hBN/ZnO van der waals tunneling heterostructure based ultraviolet photodetector[J].Optics Express,2015,23(15):18864-18871.
[38] Hiroyuki Tetsuka,Akihiro Nagoya,Shin-ichi Tamura.Graphene/nitrogen-functionalized graphene quantum dot hybrid broadband photodetectors with a buffer layer of boron nitride nanosheets[J].Nanoscale,2016,8(47):19677-19683.
[39] Li Xiaoqiang,Lin Shisheng,Lin Xing,et al.Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector[J].Optics Express,2016,24(1):134-135.