Semiconductor–metal transition in GaAs nanowires under high pressure
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摘要
We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.
We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.
We investigate the structural phase transitions and electronic properties of GaAs nanowires under high pressure by using synchrotron x-ray diffraction and infrared reflectance spectroscopy methods up to 26.2 GPa at room temperature.The zinc-blende to orthorhombic phase transition was observed at around 20.0 GPa.In the same pressure range, pressureinduced metallization of GaAs nanowires was confirmed by infrared reflectance spectra.The metallization originates from the zinc-blende to orthorhombic phase transition.Decompression results demonstrated that the phase transition from zincblende to orthorhombic and the pressure-induced metallization are reversible.Compared to bulk materials, GaAs nanowires show larger bulk modulus and enhanced transition pressure due to the size effects and high surface energy.
引文
[1]Bar-Chaim N, Margalit S, Yariv A and Ury I 1982 IEEE Trans.Electron.Devices 29 1372
[2]Yoon J, Jo S, Chun I S, Jung I, Kim H S, Meitl M, Menard E, Li X,Coleman J J, Paik U and Rogers J A 2010 Nature 465 329
[3]Lee K, Lee J, Mazor B A and Forrest S R 2015 Light:Sci.&Appl.4e288
[4]Persson A I, Larsson M W, Stenstr?m S, Ohlsson B J, Samuelson L and Wallenberg L R 2004 Nat.Mater.3 677
[5]Colombo C, Spirkoska D, Frimmer M, Abstreiter G and Fontcuberta i Morral A 2008 Phys.Rev.B 77 155326
[6]Hoang T B, Moses A F, Zhou H L, Dheeraj D L, Fiml, B O and Weman H 2009 Appl.Phys.Lett.94 133105
[7]Czaban J A, Thompson D A and LaPierre R R 2009 Nano Lett.9 148
[8]Breuer S, Pfüller C, Flissikowski T, Brandt O, Grahn H T, Geelhaar L and Riechert H 2011 Nano Lett.11 1276
[9]Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H H and Jagadish C 2013 Nat.Photon.7 963
[10]Wang Z and Nabet B 2015 Nanophotonics 4 491
[11]Burgess T, Saxena D, Mokkapati S, Li Z, Hall C R, Davis J A, Wang Y, Smith L M, Fu L, Caroff P, Tan H H and Jagadish C 2016 Nat.Commun.7 11927
[12]Wang Y B, Wang L F, Joyce H J, Gao Q, Liao X Z, Mai Y W, Tan H H, Zou J, Ringer S P, Gao H J and Jagadish C 2011 Adv.Mater.231356
[13]Paulitschke P, Seltner N, Lebedev A, Lorenz H and Weig E M 2013Appl.Phys.Lett.103 261901
[14]Mante P A, Lehmann S, Anttu N, Dick K A and Yartsev A 2016 Nano Lett.16 4792
[15]Joyce H J, Parkinson P, Jiang N, Docherty C J, Gao Q, Tan H H, Jagadish C, Herz L M and Johnston M B 2014 Nano Lett.14 5989
[16]Shtrikman H, Popovitz-Biro R, Kretinin A V and Kacman P 2011 IEEE J.Sel.Top.Quantum Electron.17 922
[17]Hemley R J 2000 Annu.Rev.Phys.Chem.51 763
[18]San-Miguel A 2006 Chem.Soc.Rev.35 876
[19]Drozdov A P, Eremets M I, Troyan I A, Ksenofontov V and Shylin S I2015 Nature 525 73
[20]Zhang L J, Wang Y C, Lv J and Ma Y M 2017 Nat.Rev.Mater.2 17005
[21]Besson J M, Itié J P, Polian A, Weill G, Mansot J L and Gonzalez J1991 Phys.Rev.B 44 4214
[22]Samuel T W, Yogesh K V, Craig A V and Arthur L R 1989 Phys.Rev.B 39 1280
[23]Gupta D C and Kulshrestha S 2008 J.Phys.:Condens.Matter 20255204
[24]Wang J, Wu B J, Zhang G Z, Tian L H, Gu G R and Gao C X 2016 RSC Adv.6 10144
[25]Zardo I, Yazji S, Marini C, Uccelli E, Fontcuberta i Morral A, Abstreiter G and Postorino P 2012 ACS Nano 6 3284
[26]Zhou W, Chen X J, Zhang J B, Li X H, Wang Y Q and Goncharov A F 2015 Sci.Rep.4 6472
[27]Li L X, Pan D, Xue Y Z, Wang X L, Lin M L, Su D, Zhang Q L, Yu X Z, So H, Wei D H, Sun B, Tan P H, Pan A L and Zhao J H 2017 Nano Lett.17 622
[28]Bao P, Wang Y B, Cui X Y, Gao Q, Yen H W, Liu H W, Kong Yeoh W,Liao X Z, Du S, Hoe Tan H, Jagadish C, Zou J, Ringer S P and Zheng R K 2014 Appl.Phys.Lett.104 021904
[29]Zhang H F, Guan Z, Cheng B Y, Li Q J, Liu R, Zhang J, Liu Z X, Yang K, Cui T and Liu B B 2017 RSC Adv.7 31597
[30]Wang Z W, Daemen L L, Zhao Y S, Zha C S, Downs R T, Wang X D,Wang Z L and Hemley R J 2005 Nat.Mater.4 922
[31]He Y, Liu J F, Chen W, Wang Y, Wang H, Zeng Y W, Zhang G Q, Wang L N, Liu J, Hu T D, Hahn H, Gleiter H and Jiang J Z 2005 Phys.Rev.B 72 212102
[32]Wang L H, Liu H Z, Qian J, Yang W G and Zhao Y S 2012 J.Phys.Chem.C 116 2074
[33]Li Q J, Zhang H F, Lin C L, Tian F B, Smith J S, Park C, Liu B B and Shen G Y 2017 J.Alloys Compd.709 260
[2]Yoon J, Jo S, Chun I S, Jung I, Kim H S, Meitl M, Menard E, Li X,Coleman J J, Paik U and Rogers J A 2010 Nature 465 329
[3]Lee K, Lee J, Mazor B A and Forrest S R 2015 Light:Sci.&Appl.4e288
[4]Persson A I, Larsson M W, Stenstr?m S, Ohlsson B J, Samuelson L and Wallenberg L R 2004 Nat.Mater.3 677
[5]Colombo C, Spirkoska D, Frimmer M, Abstreiter G and Fontcuberta i Morral A 2008 Phys.Rev.B 77 155326
[6]Hoang T B, Moses A F, Zhou H L, Dheeraj D L, Fiml, B O and Weman H 2009 Appl.Phys.Lett.94 133105
[7]Czaban J A, Thompson D A and LaPierre R R 2009 Nano Lett.9 148
[8]Breuer S, Pfüller C, Flissikowski T, Brandt O, Grahn H T, Geelhaar L and Riechert H 2011 Nano Lett.11 1276
[9]Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H H and Jagadish C 2013 Nat.Photon.7 963
[10]Wang Z and Nabet B 2015 Nanophotonics 4 491
[11]Burgess T, Saxena D, Mokkapati S, Li Z, Hall C R, Davis J A, Wang Y, Smith L M, Fu L, Caroff P, Tan H H and Jagadish C 2016 Nat.Commun.7 11927
[12]Wang Y B, Wang L F, Joyce H J, Gao Q, Liao X Z, Mai Y W, Tan H H, Zou J, Ringer S P, Gao H J and Jagadish C 2011 Adv.Mater.231356
[13]Paulitschke P, Seltner N, Lebedev A, Lorenz H and Weig E M 2013Appl.Phys.Lett.103 261901
[14]Mante P A, Lehmann S, Anttu N, Dick K A and Yartsev A 2016 Nano Lett.16 4792
[15]Joyce H J, Parkinson P, Jiang N, Docherty C J, Gao Q, Tan H H, Jagadish C, Herz L M and Johnston M B 2014 Nano Lett.14 5989
[16]Shtrikman H, Popovitz-Biro R, Kretinin A V and Kacman P 2011 IEEE J.Sel.Top.Quantum Electron.17 922
[17]Hemley R J 2000 Annu.Rev.Phys.Chem.51 763
[18]San-Miguel A 2006 Chem.Soc.Rev.35 876
[19]Drozdov A P, Eremets M I, Troyan I A, Ksenofontov V and Shylin S I2015 Nature 525 73
[20]Zhang L J, Wang Y C, Lv J and Ma Y M 2017 Nat.Rev.Mater.2 17005
[21]Besson J M, Itié J P, Polian A, Weill G, Mansot J L and Gonzalez J1991 Phys.Rev.B 44 4214
[22]Samuel T W, Yogesh K V, Craig A V and Arthur L R 1989 Phys.Rev.B 39 1280
[23]Gupta D C and Kulshrestha S 2008 J.Phys.:Condens.Matter 20255204
[24]Wang J, Wu B J, Zhang G Z, Tian L H, Gu G R and Gao C X 2016 RSC Adv.6 10144
[25]Zardo I, Yazji S, Marini C, Uccelli E, Fontcuberta i Morral A, Abstreiter G and Postorino P 2012 ACS Nano 6 3284
[26]Zhou W, Chen X J, Zhang J B, Li X H, Wang Y Q and Goncharov A F 2015 Sci.Rep.4 6472
[27]Li L X, Pan D, Xue Y Z, Wang X L, Lin M L, Su D, Zhang Q L, Yu X Z, So H, Wei D H, Sun B, Tan P H, Pan A L and Zhao J H 2017 Nano Lett.17 622
[28]Bao P, Wang Y B, Cui X Y, Gao Q, Yen H W, Liu H W, Kong Yeoh W,Liao X Z, Du S, Hoe Tan H, Jagadish C, Zou J, Ringer S P and Zheng R K 2014 Appl.Phys.Lett.104 021904
[29]Zhang H F, Guan Z, Cheng B Y, Li Q J, Liu R, Zhang J, Liu Z X, Yang K, Cui T and Liu B B 2017 RSC Adv.7 31597
[30]Wang Z W, Daemen L L, Zhao Y S, Zha C S, Downs R T, Wang X D,Wang Z L and Hemley R J 2005 Nat.Mater.4 922
[31]He Y, Liu J F, Chen W, Wang Y, Wang H, Zeng Y W, Zhang G Q, Wang L N, Liu J, Hu T D, Hahn H, Gleiter H and Jiang J Z 2005 Phys.Rev.B 72 212102
[32]Wang L H, Liu H Z, Qian J, Yang W G and Zhao Y S 2012 J.Phys.Chem.C 116 2074
[33]Li Q J, Zhang H F, Lin C L, Tian F B, Smith J S, Park C, Liu B B and Shen G Y 2017 J.Alloys Compd.709 260