低温溶液法制备氧化钼及其在QLEDs中的应用
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摘要
空穴注入层(HIL)在量子点发光二极管(QLEDs)中有重要作用。使用低温溶液法制作了Mo Ox纳米颗粒,将其在氧化铟锡(ITO)玻璃上旋涂成膜后使用不同温度进行退火处理,并作为空穴注入层进行量子点发光二极管的制作。实验结果表明,氧化钼薄膜有着与ITO玻璃阳极和Poly-TPD空穴传输层匹配的能级,可用作量子点发光二极管的空穴注入层,而使用经100℃退火处理后的MoO_x薄膜作为空穴注入层的器件性能最佳:器件启亮电压为2.5 V,最高外量子效率为11.6%,在偏压为10V时,器件的最高亮度达到27 100 cd/m~2。
Hole Injection Layer(HIL) plays a key role in Quantum dot-based Light Emitting Diodes(QLEDs). Herein, Mo Ox nanoparticles are prepared with a solution method under low temperature, next they are coated on the surface of Indium Tin Oxide(ITO) substrate by means of spin casting with following anneal under different temperatures, and then used as HILs to fabricate QLEDs. The experimental results show that the energy level of Mo Ox film is matched to those of the ITO and Poly-TPD, and Mo Ox is suitable to be used as HIL for QLEDs. By analyzing the performance of all the fabricated devices, it can be concluded that the QLEDs, corresponding to the Mo Ox film annealed under 100 ℃, exhibits the best turn-on voltage, External Quantum Efficiency(EQE) and brightness. In detail, this device has a low turn-on voltage of 2.5 V, a high EQE of 11.6%, and the highest brightness of 27 100 cd/m2 at 10 V.
Hole Injection Layer(HIL) plays a key role in Quantum dot-based Light Emitting Diodes(QLEDs). Herein, Mo Ox nanoparticles are prepared with a solution method under low temperature, next they are coated on the surface of Indium Tin Oxide(ITO) substrate by means of spin casting with following anneal under different temperatures, and then used as HILs to fabricate QLEDs. The experimental results show that the energy level of Mo Ox film is matched to those of the ITO and Poly-TPD, and Mo Ox is suitable to be used as HIL for QLEDs. By analyzing the performance of all the fabricated devices, it can be concluded that the QLEDs, corresponding to the Mo Ox film annealed under 100 ℃, exhibits the best turn-on voltage, External Quantum Efficiency(EQE) and brightness. In detail, this device has a low turn-on voltage of 2.5 V, a high EQE of 11.6%, and the highest brightness of 27 100 cd/m2 at 10 V.
引文
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[3]QIAN L,ZHENG Y,XUE J,et al.Stable and efficient Quantum-Dot Light-Emitting Diodes based on solution-processed multilayer structures[J].Nature Photonics,2011,5(9):543-548.
[4]ZHANG Y,XIE C,SU H,et al.Employing heavy metal-free colloidal quantum dots in solution-processed white Light-Emitting Diodes[J].Nano Letters,2011,11(2):329-332.
[5]SCHREUDER M A,XIAO K,IVANOV I N,et al.White Light-Emitting Diodes based on ultrasmall CdSe nanocrystal electroluminescence[J].Nano Letters,2010,10(2):573-576.
[6]COLVIN V L,SCHLAMP M C,ALIVISATOS P A.Light-Emitting Diodes made from cadmium selenide nanocrystals and a semiconducting polymer[J].Nature,1994,370(4):354-357.
[7]DAI X,ZHANG Z,JIN Y,et al.Solution-processed,high-performance Light-Emitting Diodes based on quantum dots[J].Nature,2014,515(7525):96-99.
[8]VISHAL S,LI G,YAO Y,et al.Transition metal oxides as the buffer layer for polymer photovoltaic cells[J].Applied Physics Letters,2006,88(7):073508.
[9]LI G,CHU C,SHROTRIYA W,et al.Efficient inverted polymer solar cells[J].Applied Physics Letters,2006,88(25):253503.
[10]MEYER J,WINKLER T,HAMWI S,et al.Transparent inverted organic Light-Emitting Diodes with a tungsten oxide buffer layer[J].Advanced Materials,2008,20(20):3839-3843.
[11]YANG X,MA Y,MUTLUGUN E,et al.Stable,efficient,and all-solution-processed Quantum Dot Light-Emitting Diodes with double-sided metal oxide nanoparticle charge transport layers[J].ACS Applied Materials&Interfaces,2014,6(1):495-499.
[12]ZHANG H,WANG S,SUN,et al.Solution-processed vanadium oxide as an efficient hole injection layer for Quantum-Dot Light-Emitting Diodes[J].Journal of Materials Chemistry C,2017,5(4):817-823.
[13]VU H T,SU Y K,CHIANG R K,et al.Solution-processable MoOx for efficient Light-Emitting Diodes based on giant quantum dots[J].IEEE Photonics Technology Letters,2016,28(20):2156-2159.
[14]孟鑫沛.钼及氧化钼纳米冷阴极的制备技术[D].广州:中山大学,2008.(MENG Xinpei.Molybdenum and molybdenum oxide nano preparation of cold cathode technology[D].Guangzhou,China:Sun Yat-sen University,2008.)
[15]林左叶,梁炯强,刘韩,等.高迁移率ZnO纳米线的太赫兹探测器应用[J].太赫兹科学与电子信息学报,2014,12(5):647-652.(LIN Zuoye,LIANG Jongqiang,LIU Han,et al.High mobility ZnO nanowires for terahertz detection applications[J].Journal of Terahertz Science and Electronic Information Technology,2014,12(5):647-652.)