SiN钝化层对GaAs pHEMT低噪声放大器芯片耐氢效应能力的影响
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摘要
对两种不同钝化层状态的LNA芯片在不同氢气浓度下进行150℃、105h加速寿命试验。漏极电流监控曲线表明,加厚SiN钝化层器件在20%氢气浓度试验后仅下降约0.8%,试验前后电性能基本不变。通过加厚SiN钝化层有效提升了GaAs pHEMT低噪声放大器芯片在氢气氛围中的可靠工作寿命,这对于该类器件在组件中的实际应用具有重要意义。
Accelerated aging tests were conducted on two kinds of passivation layer LNA under different hydrogen concentrations at 150℃for 105 hours.It is found from the drain current monitoring data that the current of the thicked passivation LNA fall by about 0.8% under 20%hydrogen concentration,while the microwave performance is basically unchanged before and after test.By thickening SiN passivation layer,the reliable working life of GaAs pHEMT low noise amplifier(LNA)in hydrogen atmosphere is effectively enhanced.It is of great significance for such devices in practical component applications.
Accelerated aging tests were conducted on two kinds of passivation layer LNA under different hydrogen concentrations at 150℃for 105 hours.It is found from the drain current monitoring data that the current of the thicked passivation LNA fall by about 0.8% under 20%hydrogen concentration,while the microwave performance is basically unchanged before and after test.By thickening SiN passivation layer,the reliable working life of GaAs pHEMT low noise amplifier(LNA)in hydrogen atmosphere is effectively enhanced.It is of great significance for such devices in practical component applications.
引文
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[2] Chao P C,Hu W,Deorio H,et al.Ti-gate metal induced pHEMT degradation in hydrogen[J].IEEE Elecrton Device Letters,1997,18(9):441-443.
[3]刘文宝,陈文卿.H2对航天用GaAs器件可靠性的影响[J].质量与可靠性,2010,149(5):30-33.
[4]吴文章,白桦,刘燕芳,等.密封元器件中氢气的产生及控制[J].电子与封装,2009,9(8):34-37.
[5]丁荣峥,李秀林,明雪飞,等.封装腔体内氢气含量控制[J].电子产品可靠性与环境试验,2012,30(2):1-5.
[6] Adams S B,MacDonald J A,Hu W W,et al.Reliability of GaAs PHEMT MMICs in hydrogen ambients[C].GaAs Reliability Workshop,Phiadelphia,1994.
[7]林丽艳,李用兵.GaAs PHEMT低噪声放大器氢效应机理分析[J].半导体技术,2016,41(2):143-147.