直流电弧等离子体喷射法制备金刚石自支撑膜研究新进展
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摘要
文章综述了以直流电弧等离子体喷射法制备自支撑金刚石膜的研究新进展,对电弧特性、金刚石晶体质量、力学性能、光学性能及热学性能进行了介绍。研究表明:不同电弧区域的金刚石膜结晶质量及应力状态有所差异,钛过渡层可以降低金刚石的残余应力;采用四点弯曲测得金刚石的断裂韧性为10.99MPa·m~(1/2);一定温度范围内,金刚石吸收系数与温度的关系基本不受金刚石质量和厚度的影响;金刚石的光学性能越好,其热导率越高,且金刚石形核面热导率略高于生长面,500K以上时多晶金刚石膜的热导率近似于单晶水平。
In this paper,the recent progress of free-standing diamond films prepared by DC(direct current)arc plasma jet is reviewed from arc characteristics,diamond crystal quality,mechanical properties,optical properties and thermal properties.The results shows that the crystalline quality and stress state of diamond films are different in various regions of arc,and that Ti transition layer can reduce the residual stress of diamond.The fracture toughness of diamond is up to 10.99 MPa·m~(1/2) by four-point bending method.In a certain temperature range,the change tendency of the absorption coefficient and temperature is independent of the crystalline quality and thickness of diamond films.The better optical properties of diamond films are,the higher thermal conductivity is.The thermal conductivity of nucleation surface is slightly higher than that of growth surface.When temperature is more than 500 K,the thermal conductivity of polycrystalline diamond films could approach that of single crystal.
In this paper,the recent progress of free-standing diamond films prepared by DC(direct current)arc plasma jet is reviewed from arc characteristics,diamond crystal quality,mechanical properties,optical properties and thermal properties.The results shows that the crystalline quality and stress state of diamond films are different in various regions of arc,and that Ti transition layer can reduce the residual stress of diamond.The fracture toughness of diamond is up to 10.99 MPa·m~(1/2) by four-point bending method.In a certain temperature range,the change tendency of the absorption coefficient and temperature is independent of the crystalline quality and thickness of diamond films.The better optical properties of diamond films are,the higher thermal conductivity is.The thermal conductivity of nucleation surface is slightly higher than that of growth surface.When temperature is more than 500 K,the thermal conductivity of polycrystalline diamond films could approach that of single crystal.
引文
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[4]MATSUMOTO S,SATO Y,TSUTSUMI M,et al.Growth of diamond particles from methane-hydrogen gas[J].Journal of Materials Science,1982,17(11):3106–3112.
[5]WORT C J H,LETTINGTON A H,SMITH C,et al.Optical and other properties of MPACVD diamond[J].Proceedings of SPIE–The International Society for Optics and Photonics,1989:199–204.
[6]MESSIER R,BADZIAN A R,BADZIAN T,et al.From diamond-like carbon to diamond coatings[J].Thin Solid Films,1987,153(1–3):1–9.
[7]HIROSE Y,TERASAWA Y.Synthesis of diamond thin films by thermal CVD using organic compounds[J].Japanese Journal of Applied Physics,1986,25(6A):L519.
[8]CHOU Y K,LIU J.CVD diamond tool performance in metal matrix composite machining[J].Surface and Coatings Technology,2005,200(5):1872–1878.
[9]ARUMUGAM P U,MALSHE A P,BATZER S A.Dry machining of aluminum-silicon alloy using polished CVD diamond-coated cutting tools inserts[J].Surface and Coatings Technology,2006,200(11):3399–3403.
[10]LIANG Q,VOHRA Y K,THOMPSON R.High speed continuous and interrupted dry turning of A390aluminum/silicon alloy using nanostructured diamond coated WC-6wt%cobalt tool inserts by MPCVD[J].Diamond and Related Materials,2008,17(12):2041–2047.
[11]BROWN W D,BEERA R A,NASEEM H A,et al.State-ofthe-art synthesis and post-deposition processing of large area CVD diamond substrates for thermal management[J].Surface and Coatings Technology,1996,86:698–707.
[12]GRAY K J.Effective thermal conductivity of a diamond coated heat spreader[J].Diamond and Related Materials,2000,9(2):201–204.
[13]MUBAROK F,CARRAPICHANO J M,ALMEIDA F A,et al.Enhanced sealing performance with CVD nanocrystalline diamond films in self-mated mechanical seals[J].Diamond and Related Materials,2008,17(7):1132–1136.
[14]BEETZ C P,COOPER C V,PERRY T A.Ultralow-load indentation hardness and modulus of diamond films deposited by hotfilament-assisted CVD[J].Journal of Materials Research,1990,5(11):2555–2561.
[15]MITSUDA Y,KOJIMA Y,YOSHIDA T,et al.The growth of diamond in microwave plasma under low pressure[J].Journal of Materials Science,1987,22(5):1557–1562.
[16]KURIHARA K,SASAKI K,KAWARADA M.Diamond-film synthesis using DC plasma jet CVD[J].Fujitsu Scientific and Technical Journal,1989,25(1):44–51.
[17]MATSUMOTO S,MANABE Y,HIBINO Y.Diamond deposition using an X-Y stage in a dc plasma jet chemical vapour deposition[J].Journal of Materials Science,1992,27(21):5905–5910.
[18]OHTAKE N,YOSHIKAWA M.Nucleation effects and characteristics of diamond film grown by arc discharge plasma jet chemical vapor deposition[J].Thin Solid Films,1992,212(1–2):112–121.
[19]HUANG T B,TANG W Z,LU F X,et al.Influence of plasma power over growth rate and grain size during diamond deposition using DC arc plasma jet CVD[J].Thin Solid Films,2003,429(1):108–113.
[20]LI C M,WANG L M,CHEN L X,et al.Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer[J].Diamond and Related Materials,2009,18(11):1348–1352.
[21]LU F X,ZHONG G F,SUN J G,et al.A new type of DC arc plasma torch for low cost large area diamond deposition[J].Diamond and Related Materials,1998,7(6):737–741.
[22]GUO J C,LI C M,LIU J L,et al.Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet[J].Applied Surface Science,2016,370:237–242.
[23]HUANG T B,TANG W Z,LU F X,et al.Argon-to-hydrogen ratio in plasma jet diamond chemical vapour deposition[J].Surface and Coatings Technology,2005,190(1):48–53.
[24]LI C M,ZHU R H,LIU J L,et al.Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma jet CVD[J].Diamond and Related Materials,2013,39:47–52.
[25]AGER III J W,DRORY M D.Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition[J].Physical Review B,1993,48(4):2601.
[26]LIU T,PINTO H,BRITO P,et al.Residual stress analysis in chemical-vapor-deposition diamond films[J].Applied Physics Letters,2009,94(20):201902.
[27]KUBAREV V V.Optical properties of CVD–diamond in terahertz and infrared ranges[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2009,603(1):22–24.
[28]左振博,郭建超,刘金龙,等.电弧分区特征对金刚石形核的影响[J].人工晶体学报,2014,43(10):2515–2521.ZUO Zhenbo,GUO Jianchao,LIU Jinlong,et al.Effect of area arc distribution on diamond nucleation[J].Journal of Synthetic Crystals,2014,43(10):2515–2521.
[29]LIU Z,CHEN L X,LI C M,et al.Thermal stress in freestanding diamond films with Cr interlayer destroyed[J].Journal of Materials Science&Technology,2010,26(11):991–995.
[30]陈良贤,李成明,陈飞,等.钛过渡层沉积自支撑金刚石膜的界面特征[J].机械工程材料,2008,32(S2):57–59.CHEN Liangxian,LI Chengming,CHEN Fei,et al.Interface characteristics of free-standing diamond films deposited on Mo substrate with Ti interlayer[J].Mechanical Engineering Material,2008,32(S2):57–59.
[31]LI C M,WANG L,CHEN L X,et al.Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer[J].Diamond and Related Materials,2009,18(11):1348–1352.
[32]LIU Z,LI C M,CHEN L X,et al.Deposition of crackless freestanding diamond films on Mo substrates with Zr interlayer[J].International Journal of Minerals,Metallurgy,and Materials,2010,17(2):246–250.
[33]陈良贤,李成明,陈飞,等.自支撑金刚石膜的生长特征对断裂强度的影响[J].材料热处理学报,2008,29(6):1–4.CHEN Liangxian,LI Chengming,CHEN Fei,et al.Effect of growth characteristics on fracture strength of free-standing diamond films[J].Transactions of Materials and Heat Treatment,2008,29(6):1–4.
[34]PICKLES C S J.The fracture stress of chemical vapour deposited diamond[J].Diamond and Related Materials,2002,11(12):1913–1922.
[35]RALCHENKO V G,PLEULER E,LU F X,et al.Fracture strength of optical quality and black polycrystalline CVD diamonds[J].Diamond and Related Materials,2012,23:172–177.
[36]LU F X,JIANG Z,TANG W Z,et al.Accurate measurement of strength and fracture toughness forminiature size thick diamond films samples by three point bending at constant loading rate[J].Diamond and Related Materials,2001,10:770–774.
[37]SUSSMANN R S,BRANDON J R,COE S E,et al.CVD diamond:a new engineering material for thermal dielectric and optical applications[J].Industrial Diamond Review,1998,58(578):69–77.
[38]沈学基.半导体材料和光学性质[M].北京:科学出版社,2002.SHEN Xueji.Semiconductor materials and optical properties[M].Beijing:Science Press,2002.
[39]LU F X,TANG W Z,HUANG T B,et al.Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode[J].Diamond and Related Materials,2001,10:1551–1558.
[40]REMES Z,NESLADEK M,PICKLES C S J.Local variations and temperature dependence of optical absorption coefficient in natural IIa type and CVD diamond optical windows[J].Physica Status Solidi(a),2001,186(2):297–301.
[41]STEHL C,SCHRECK M,FISCHER M,et al.Thermal diffusivity of heteroepitaxial diamond films:Experimental set up and measurements[J].Diamond and Related Materials,2010,19(7):787–791.
[42]QU Q Y,QIU W Q,ZENG D C,et al.Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition[J].Transactions of Nonferrous Metals Society of China,2009,19(1):131–137.
[43]GRAEBNER J E,JIN S,KAMMLOTT G W,et al.Large anisotropic thermal conductivity in synthetic diamond films[J].Nature,1992,359(6394):401–403.
[44]TOHEI T,KUWABARA A,OBA F,et al.Debye temperature and stiffness of carbon and boron nitride polymorphs from first principles calculations[J].Physical Review B,2006,73(6):064304.
[45]WALLEY S M,FIELD J E.The contribution of the Cavendish Laboratory to the understanding of solid particle erosion mechanisms[J].Wear,2005,258(1):552–566.
[46]WHEELER D W,WOOD R J K.The erosion of CVD diamond by diamond particles[J].Philosophical Magazine Letters,2005,85(7):367–375.
[47]WHEELER D W,WOOD R J K.Fracture of diamond coatings by high velocity sand erosion[J].Philosophical Magazine,2009,89(3):285–310.
[48]SUKHADOLAU A V,IVAKIN E V,RALCHENKO V G,et al.Thermal conductivity of CVD diamond at elevated temperatures[J].Diamond and Related Materials,2005,14(3):589–593.
[49]MORELLI D T,BEETZ C P,PERRY T A.Thermal conductivity of synthetic diamond films[J].Journal of Applied Physics,1988,64(6):3063–3066.
[50]ZHU R H,MIAO J Y,LIU J L,et al.High temperature thermal conductivity of free-standing diamond films prepared by DC arc plasma jet CVD[J].Diamond and Related Materials,2014,50:55–59.
[2]EVERSOLE W G.Synthesis of diamond:U.S.Patent 3,030,188[P].1962–04–17.
[3]MATSUMOTO S,SATO Y,KAMO M,et al.Vapor deposition of diamond particles from methane[J].Japanese Journal of Applied Physics,1982,21(4A):L183.
[4]MATSUMOTO S,SATO Y,TSUTSUMI M,et al.Growth of diamond particles from methane-hydrogen gas[J].Journal of Materials Science,1982,17(11):3106–3112.
[5]WORT C J H,LETTINGTON A H,SMITH C,et al.Optical and other properties of MPACVD diamond[J].Proceedings of SPIE–The International Society for Optics and Photonics,1989:199–204.
[6]MESSIER R,BADZIAN A R,BADZIAN T,et al.From diamond-like carbon to diamond coatings[J].Thin Solid Films,1987,153(1–3):1–9.
[7]HIROSE Y,TERASAWA Y.Synthesis of diamond thin films by thermal CVD using organic compounds[J].Japanese Journal of Applied Physics,1986,25(6A):L519.
[8]CHOU Y K,LIU J.CVD diamond tool performance in metal matrix composite machining[J].Surface and Coatings Technology,2005,200(5):1872–1878.
[9]ARUMUGAM P U,MALSHE A P,BATZER S A.Dry machining of aluminum-silicon alloy using polished CVD diamond-coated cutting tools inserts[J].Surface and Coatings Technology,2006,200(11):3399–3403.
[10]LIANG Q,VOHRA Y K,THOMPSON R.High speed continuous and interrupted dry turning of A390aluminum/silicon alloy using nanostructured diamond coated WC-6wt%cobalt tool inserts by MPCVD[J].Diamond and Related Materials,2008,17(12):2041–2047.
[11]BROWN W D,BEERA R A,NASEEM H A,et al.State-ofthe-art synthesis and post-deposition processing of large area CVD diamond substrates for thermal management[J].Surface and Coatings Technology,1996,86:698–707.
[12]GRAY K J.Effective thermal conductivity of a diamond coated heat spreader[J].Diamond and Related Materials,2000,9(2):201–204.
[13]MUBAROK F,CARRAPICHANO J M,ALMEIDA F A,et al.Enhanced sealing performance with CVD nanocrystalline diamond films in self-mated mechanical seals[J].Diamond and Related Materials,2008,17(7):1132–1136.
[14]BEETZ C P,COOPER C V,PERRY T A.Ultralow-load indentation hardness and modulus of diamond films deposited by hotfilament-assisted CVD[J].Journal of Materials Research,1990,5(11):2555–2561.
[15]MITSUDA Y,KOJIMA Y,YOSHIDA T,et al.The growth of diamond in microwave plasma under low pressure[J].Journal of Materials Science,1987,22(5):1557–1562.
[16]KURIHARA K,SASAKI K,KAWARADA M.Diamond-film synthesis using DC plasma jet CVD[J].Fujitsu Scientific and Technical Journal,1989,25(1):44–51.
[17]MATSUMOTO S,MANABE Y,HIBINO Y.Diamond deposition using an X-Y stage in a dc plasma jet chemical vapour deposition[J].Journal of Materials Science,1992,27(21):5905–5910.
[18]OHTAKE N,YOSHIKAWA M.Nucleation effects and characteristics of diamond film grown by arc discharge plasma jet chemical vapor deposition[J].Thin Solid Films,1992,212(1–2):112–121.
[19]HUANG T B,TANG W Z,LU F X,et al.Influence of plasma power over growth rate and grain size during diamond deposition using DC arc plasma jet CVD[J].Thin Solid Films,2003,429(1):108–113.
[20]LI C M,WANG L M,CHEN L X,et al.Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer[J].Diamond and Related Materials,2009,18(11):1348–1352.
[21]LU F X,ZHONG G F,SUN J G,et al.A new type of DC arc plasma torch for low cost large area diamond deposition[J].Diamond and Related Materials,1998,7(6):737–741.
[22]GUO J C,LI C M,LIU J L,et al.Structural evolution of Ti destroyable interlayer in large-size diamond film deposition by DC arc plasma jet[J].Applied Surface Science,2016,370:237–242.
[23]HUANG T B,TANG W Z,LU F X,et al.Argon-to-hydrogen ratio in plasma jet diamond chemical vapour deposition[J].Surface and Coatings Technology,2005,190(1):48–53.
[24]LI C M,ZHU R H,LIU J L,et al.Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma jet CVD[J].Diamond and Related Materials,2013,39:47–52.
[25]AGER III J W,DRORY M D.Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition[J].Physical Review B,1993,48(4):2601.
[26]LIU T,PINTO H,BRITO P,et al.Residual stress analysis in chemical-vapor-deposition diamond films[J].Applied Physics Letters,2009,94(20):201902.
[27]KUBAREV V V.Optical properties of CVD–diamond in terahertz and infrared ranges[J].Nuclear Instruments and Methods in Physics Research Section A:Accelerators,Spectrometers,Detectors and Associated Equipment,2009,603(1):22–24.
[28]左振博,郭建超,刘金龙,等.电弧分区特征对金刚石形核的影响[J].人工晶体学报,2014,43(10):2515–2521.ZUO Zhenbo,GUO Jianchao,LIU Jinlong,et al.Effect of area arc distribution on diamond nucleation[J].Journal of Synthetic Crystals,2014,43(10):2515–2521.
[29]LIU Z,CHEN L X,LI C M,et al.Thermal stress in freestanding diamond films with Cr interlayer destroyed[J].Journal of Materials Science&Technology,2010,26(11):991–995.
[30]陈良贤,李成明,陈飞,等.钛过渡层沉积自支撑金刚石膜的界面特征[J].机械工程材料,2008,32(S2):57–59.CHEN Liangxian,LI Chengming,CHEN Fei,et al.Interface characteristics of free-standing diamond films deposited on Mo substrate with Ti interlayer[J].Mechanical Engineering Material,2008,32(S2):57–59.
[31]LI C M,WANG L,CHEN L X,et al.Free-standing diamond films deposited by DC arc plasma jet on graphite substrates with a destroyable Ti interlayer[J].Diamond and Related Materials,2009,18(11):1348–1352.
[32]LIU Z,LI C M,CHEN L X,et al.Deposition of crackless freestanding diamond films on Mo substrates with Zr interlayer[J].International Journal of Minerals,Metallurgy,and Materials,2010,17(2):246–250.
[33]陈良贤,李成明,陈飞,等.自支撑金刚石膜的生长特征对断裂强度的影响[J].材料热处理学报,2008,29(6):1–4.CHEN Liangxian,LI Chengming,CHEN Fei,et al.Effect of growth characteristics on fracture strength of free-standing diamond films[J].Transactions of Materials and Heat Treatment,2008,29(6):1–4.
[34]PICKLES C S J.The fracture stress of chemical vapour deposited diamond[J].Diamond and Related Materials,2002,11(12):1913–1922.
[35]RALCHENKO V G,PLEULER E,LU F X,et al.Fracture strength of optical quality and black polycrystalline CVD diamonds[J].Diamond and Related Materials,2012,23:172–177.
[36]LU F X,JIANG Z,TANG W Z,et al.Accurate measurement of strength and fracture toughness forminiature size thick diamond films samples by three point bending at constant loading rate[J].Diamond and Related Materials,2001,10:770–774.
[37]SUSSMANN R S,BRANDON J R,COE S E,et al.CVD diamond:a new engineering material for thermal dielectric and optical applications[J].Industrial Diamond Review,1998,58(578):69–77.
[38]沈学基.半导体材料和光学性质[M].北京:科学出版社,2002.SHEN Xueji.Semiconductor materials and optical properties[M].Beijing:Science Press,2002.
[39]LU F X,TANG W Z,HUANG T B,et al.Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode[J].Diamond and Related Materials,2001,10:1551–1558.
[40]REMES Z,NESLADEK M,PICKLES C S J.Local variations and temperature dependence of optical absorption coefficient in natural IIa type and CVD diamond optical windows[J].Physica Status Solidi(a),2001,186(2):297–301.
[41]STEHL C,SCHRECK M,FISCHER M,et al.Thermal diffusivity of heteroepitaxial diamond films:Experimental set up and measurements[J].Diamond and Related Materials,2010,19(7):787–791.
[42]QU Q Y,QIU W Q,ZENG D C,et al.Effects of deposition parameters on microstructure and thermal conductivity of diamond films deposited by DC arc plasma jet chemical vapor deposition[J].Transactions of Nonferrous Metals Society of China,2009,19(1):131–137.
[43]GRAEBNER J E,JIN S,KAMMLOTT G W,et al.Large anisotropic thermal conductivity in synthetic diamond films[J].Nature,1992,359(6394):401–403.
[44]TOHEI T,KUWABARA A,OBA F,et al.Debye temperature and stiffness of carbon and boron nitride polymorphs from first principles calculations[J].Physical Review B,2006,73(6):064304.
[45]WALLEY S M,FIELD J E.The contribution of the Cavendish Laboratory to the understanding of solid particle erosion mechanisms[J].Wear,2005,258(1):552–566.
[46]WHEELER D W,WOOD R J K.The erosion of CVD diamond by diamond particles[J].Philosophical Magazine Letters,2005,85(7):367–375.
[47]WHEELER D W,WOOD R J K.Fracture of diamond coatings by high velocity sand erosion[J].Philosophical Magazine,2009,89(3):285–310.
[48]SUKHADOLAU A V,IVAKIN E V,RALCHENKO V G,et al.Thermal conductivity of CVD diamond at elevated temperatures[J].Diamond and Related Materials,2005,14(3):589–593.
[49]MORELLI D T,BEETZ C P,PERRY T A.Thermal conductivity of synthetic diamond films[J].Journal of Applied Physics,1988,64(6):3063–3066.
[50]ZHU R H,MIAO J Y,LIU J L,et al.High temperature thermal conductivity of free-standing diamond films prepared by DC arc plasma jet CVD[J].Diamond and Related Materials,2014,50:55–59.