单晶硅晶片化学机械抛光基本特性研究
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摘要
实验中利用商业抛光机对单晶硅晶片进行化学机械抛光;实验结果显示:表面粗糙度随着抛光垫和抛光头的转速以及抛光载荷的增加而减小;抛光载荷是影响总厚度变化的主要因素,晶片的总厚度变化会随着抛光载荷的增加而相应地减少;材料去除率随着抛光垫转速,抛光头转速,以及抛光载荷的增加而增加,抛光载荷的变化对材料去除率的影响最明显。
In this experiment,single crystal silicon wafer was subjected to chemical mechanical polishing using a commercial polishing machine. The experimental results show that:( 1) the surface roughness( Ra) decreases with the rotation speed of the polishing pad and the polishing head and the polishing load increases;( 2) the polishing load is the main factors affecting the total thickness variation( TTV),and the total thickness variation of the wafer will decrease correspondingly as the polishing load increases;( 3) The material removal rate( MRR) increases as the polishing pad rotation speed,the polishing head rotation speed,and the polishing load increase. The change in polishing load has the most significant effect on the material removal rate.
In this experiment,single crystal silicon wafer was subjected to chemical mechanical polishing using a commercial polishing machine. The experimental results show that:( 1) the surface roughness( Ra) decreases with the rotation speed of the polishing pad and the polishing head and the polishing load increases;( 2) the polishing load is the main factors affecting the total thickness variation( TTV),and the total thickness variation of the wafer will decrease correspondingly as the polishing load increases;( 3) The material removal rate( MRR) increases as the polishing pad rotation speed,the polishing head rotation speed,and the polishing load increase. The change in polishing load has the most significant effect on the material removal rate.
引文
[1] YI Defu,LI Jianyong,ZHU Pengzhe. Study of nanoscratching process of Ga As using molecular dynamics[J]. Crystals,2018,8(8):321-330.
[2] MATOVU J B,ONG P,LEUNISSEN L H A,et al. Fundamental Investigation of Chemical Mechanical Polishing of Ga Asin Silica Dispersions:Material Removal and Arsenic Trihydride Formation Pathways[J]. Journal of Solid State Science and Technology,2013,11(2):432-439.
[3] MCGHEE L,MCMEEKIN S G,NICOL I,et al. Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface finish. Evaluation of the action and effectiveness of hydrogen peroxide,sodium hypochlorite and dibromine as reagents[J]. Journal of Materials Chemistry,1994,4(1):29-34.
[4] YU B,GAO J,CHEN L,et al. Effect of sliding velocity on tribochemical removal of gallium arsenide surface[J].Wear,2014,330/331:59-63.
[5] WU Y,CHANG L. Chemical polishing method of Ga Asspecimens for transmission electron microscopy[J]. Micron,2010,41(1):20-5.
[6] OOKAWA T,NISHIGUCHI T. Improvement of pad life in mirror polishing for Ga Aswafers[J]. JSME International Journal,2004,47(1):98-104.
[7] HOSHINO T,KURATA Y,TERASAKL Y. Mechanism of polishing of Si O2by Ce O2particles[J]. J Non-Cryst Solids,2001(283):129-196.
[2] MATOVU J B,ONG P,LEUNISSEN L H A,et al. Fundamental Investigation of Chemical Mechanical Polishing of Ga Asin Silica Dispersions:Material Removal and Arsenic Trihydride Formation Pathways[J]. Journal of Solid State Science and Technology,2013,11(2):432-439.
[3] MCGHEE L,MCMEEKIN S G,NICOL I,et al. Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface finish. Evaluation of the action and effectiveness of hydrogen peroxide,sodium hypochlorite and dibromine as reagents[J]. Journal of Materials Chemistry,1994,4(1):29-34.
[4] YU B,GAO J,CHEN L,et al. Effect of sliding velocity on tribochemical removal of gallium arsenide surface[J].Wear,2014,330/331:59-63.
[5] WU Y,CHANG L. Chemical polishing method of Ga Asspecimens for transmission electron microscopy[J]. Micron,2010,41(1):20-5.
[6] OOKAWA T,NISHIGUCHI T. Improvement of pad life in mirror polishing for Ga Aswafers[J]. JSME International Journal,2004,47(1):98-104.
[7] HOSHINO T,KURATA Y,TERASAKL Y. Mechanism of polishing of Si O2by Ce O2particles[J]. J Non-Cryst Solids,2001(283):129-196.