军用标准PIND试验方法发展与对比分析
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摘要
封装腔体内部的可动粒子会引起半导体器件和电路的短路或间歇性功能失效,从而对其使用可靠性产生影响。粒子碰撞噪声检测(PIND)试验可有效剔除腔体内部含有可动粒子的器件,从而被纳入多项标准中作为一项无损筛选试验并得到广泛的应用。给出了腔体内部可动粒子的危害,详细研究了美国和中国军用标准PIND试验方法的发展历程及现状,对比了3种PIND试验标准不同版本试验参数的变化,分析了标准参数变化产生的影响,给出了筛选批接收的试验流程,对试验人员具有一定指导作用,提高了PIND筛选试验的准确性。
Loose particles in the sealed cavity may occur to cause a short circuit or intermittent functional failure of semiconductor devices and circuits, which affect the using reliability. As one of the non-destructive screening tests, particle impact noise detection(PIND) testing can eliminate the devices containing loose particles in the cavity effectively,which has been widely used. The hazard of loose particles in cavity is given.The development and present status of PIND test methods used in military stan-dards of the United States and China are studied in detail, and changes of parameters in different versions of three PIND test methods used in military standards are compared. The influences of parameter changing are analyzed, and the flow chart of PIND for screening lot acceptance is also provided, so as to give a guidance for operators to improve the accuracy of PIND screening test.
Loose particles in the sealed cavity may occur to cause a short circuit or intermittent functional failure of semiconductor devices and circuits, which affect the using reliability. As one of the non-destructive screening tests, particle impact noise detection(PIND) testing can eliminate the devices containing loose particles in the cavity effectively,which has been widely used. The hazard of loose particles in cavity is given.The development and present status of PIND test methods used in military stan-dards of the United States and China are studied in detail, and changes of parameters in different versions of three PIND test methods used in military standards are compared. The influences of parameter changing are analyzed, and the flow chart of PIND for screening lot acceptance is also provided, so as to give a guidance for operators to improve the accuracy of PIND screening test.
引文
[1] 郑鹏洲. MIL-STD-883更名并作重大修改[J]. 质量与可靠性,2001(4):81.ZHENG P Z. MIL-STD-883 was renamed with great modification[J]. Quality and Reliability, 2001(4):81(in Chinese).
[2] United States Department of Defense. Test method standard microcircuits:MIL-STD-883E[S]. 1996:330-334.
[3] United States Department of Defense. Test method standard semiconductor devices:MIL-STD-750D[S]. 1995:163-167.
[4] United States Department of Defense. Test method standard electronic and electrical component parts:MIL-STD-202H[S]. 2015:222-228.
[5] 中国人民解放军总装备部. 微电子器件试验方法和程序:GJB 548B—2005[S].北京:总装备部军标出版发行部,2007:232-234.
[6] 国防科学技术工业委员会. 半导体分立器件试验方法:GJB 128A—97[S].北京:国防科工委军标出版发行部,1997:95-98.
[7] 中国人民解放军总装备部. 电子及电器元件试验方法:GJB 360B—2009[S].北京:总装备部军标出版发行部,2010:75-78.
[8] SLYKHOUS S J. Particle impact noise detection (PIND) combines vibration, shock, and acoustics for determining reliability of electronic components[DB/OL].[2018-10-15]. https://spectraldynamics.eu/p-i-n-d/p-i-n-d-shock-and-vib-article/.
[9] ZHANG H,WANG S J, ZHAI G F. Research on particle impact noise detection standards[J]. IEEE Transactions on Aerospace and Electronic Systems,2008,44(2):808-814.
[10] United States Department of Defense. General specification for semiconductor devices:MIL-PRF-19500P[S]. 2010:93.
[2] United States Department of Defense. Test method standard microcircuits:MIL-STD-883E[S]. 1996:330-334.
[3] United States Department of Defense. Test method standard semiconductor devices:MIL-STD-750D[S]. 1995:163-167.
[4] United States Department of Defense. Test method standard electronic and electrical component parts:MIL-STD-202H[S]. 2015:222-228.
[5] 中国人民解放军总装备部. 微电子器件试验方法和程序:GJB 548B—2005[S].北京:总装备部军标出版发行部,2007:232-234.
[6] 国防科学技术工业委员会. 半导体分立器件试验方法:GJB 128A—97[S].北京:国防科工委军标出版发行部,1997:95-98.
[7] 中国人民解放军总装备部. 电子及电器元件试验方法:GJB 360B—2009[S].北京:总装备部军标出版发行部,2010:75-78.
[8] SLYKHOUS S J. Particle impact noise detection (PIND) combines vibration, shock, and acoustics for determining reliability of electronic components[DB/OL].[2018-10-15]. https://spectraldynamics.eu/p-i-n-d/p-i-n-d-shock-and-vib-article/.
[9] ZHANG H,WANG S J, ZHAI G F. Research on particle impact noise detection standards[J]. IEEE Transactions on Aerospace and Electronic Systems,2008,44(2):808-814.
[10] United States Department of Defense. General specification for semiconductor devices:MIL-PRF-19500P[S]. 2010:93.