High performance lateral Schottky diodes based on quasi-degenerated Ga_2O_3
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摘要
Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n~+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10~(-5) cm~2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm~2,and an ultra-high on/off ratio of 2.1 ×10~(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm~2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.
Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n~+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10~(-5) cm~2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm~2,and an ultra-high on/off ratio of 2.1 ×10~(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm~2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.
Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n~+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10~(-5) cm~2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm~2,and an ultra-high on/off ratio of 2.1 ×10~(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm~2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.
引文
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[20] Sasaki K, Wakimoto D, Thieu Q T, Koishikawa Y, Kuramata A, Higashiwaki M and Yamakoshi S 2017 IEEE Electron Device Lett. 38783
[21] Kasu M, Oshima T, Hanada K, Moribayashi T, Hashiguchi A, Oishi T,Koshi K, Sasaki K, Kuramata A and Ueda O 2017 Jpn. J. Appl. Phys.56 091101
[22] Kasu M, Hanada K, Moribayashi T, Hashiguchi A, Oshima T, Oishi T,Koshi K, Sasaki K, Kuramata A and Ueda O 2016 Jpn. J. Appl. Phys.55 1202BB
[23] Oishi T, Harada K, Koga Y and Kasu M 2016 Jpn. J. Appl. Phys. 55030305
[24] He Q, Mu W, Dong H, Long S, Jia Z, Lv H, Liu Q, Tang M, Tao X and Liu M 2017 Appl. Phys. Lett. 110 093503
[25] Rathkanthiwar S, Kalra A, Solanke S V, Mohta N, Muralidharan R,Raghavan S and Nath D N 2017 J. Appl. Phys. 121 164502
[26] Hudait M and Krupanidhi S 2001 Phys. B:Condens. Matter 307 125
[27] Chiu F C 2014 Adv. Mater. Sci. Eng. 7 1
[28] Arslan E, Biitiin S and Ozbay E 2009 Appl. Phys. Lett. 94 142106
[29] Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
[30] Sun X, Li D, Jiang H, Li Z, Song H, Chen Y and Miao G 2011 Appl.Phys. Lett. 98 121117
[31] Sang L W, Ren B, Sumiya M, Liao M Y, Koide Y, Tanaka A, Cho Y J,Harada Y, Nabatame T, Sekiguchi T, Usami S, Honda Y and Amano H2017 Appl. Phys. Lett. 111 122102
[32] Sang L, Liao M, Koide Y and Sumiya M 2011 Appl. Phys. Lett. 98103502
[33] Freeouf J L, Jackson T N, Laux S E and Woodall J M 1982 J. Vac. Sci.Technol. 21 570
[34] Ohdomari I and Tu K N 1980 J. Appl. Phys. 51 3735
[2] Jang S, Jung S, Kim J, Ren F, Pearton S J and Baik K H 2018 ECS J.Solid State Sc 7Q3180
[3] Oshima T, Hashiguchi A, Moribayashi T, Koshi K, Sasaki K, Kuramata A, Ueda O, Oishi T and Kasu M 2017 Jpn. J. Appl. Phys. 56 086501
[4] Oh S, Yang G and Kim J 2017 ECS J. Solid State Sc 6 Q3022
[5] Oishi T, Koga Y, Harada K and Kasu M 2015 Appl. Phys. Express 8031101
[6] Higashiwaki M, Konishi K, Sasaki K, Goto K, Nomura K, Thieu Q T,Togashi R, Murakami H, Kumagai Y and Monemar B 2016 Appl. Phys.Lett. 108 133503
[7] Liu Z, Li P G, Zhi Y S, Wang X L, Chu X L and Tang W H 2019 Chin.Phys. B 28 017105
[8] Hu Z, Zhou H, Feng Q, Zhang J, Zhang C, Dang K, Cai Y, Feng Z, Gao Y and Kang X 2018 IEEE Electron Device Lett. 39 1564
[9] Yang J C, Ahn S, Ren F, Pearton S J, Jang S, Kim J and Kuramata A2017 Appl. Phys. Lett. 110 192101
[10] Farzana E, Zhang Z, Paul P K, Arehart A R and Ringel S A 2017 Appl.Phys. Lett. 110 202102
[11] Ahn S, Ren F, Yuan L, Pearton S and Kuramata A 2017 ECS J. Solid State Sc 6 P68
[12] Oshima T, Okuno T, Arai N, Suzuki N, Hino H and Fujita S 2009 Jpn.J. Appl. Phys. 48 011605
[13] Suzuki R, Nakagomi S, Kokubun Y, Arai N and Ohira S 2009 Appl.Phys. Lett. 94 222102
[14] Pratiyush A S, Xia Z, Kumar S, Zhang Y, Joishi C, Muralidharan R,Rajan S and Nath D N 2018 IEEE Photon. Technol. Lett. 30 2025
[15] Konishi K, Goto K, Murakami H, Kumagai Y, Kuramata A, Yamakoshi S and Higashiwaki M 2017 Appl. Phys. Lett. 110 103506
[16] Li W, Hu Z, Nomoto K, Zhang Z, Hsu J Y, Thieu Q T, Sasaki K, Kuramata A, Jena D and Xing H G 2018 Appl. Phys. Lett. 113 202101
[17] Yang J, Ahn S, Ren F, Pearton S, Jang S and Kuramata A 2017 IEEE Electron Device Lett. 38 906
[18] Yang J C, Ren F, Tadjer M, Pearton S J and Kuramata A 2018 AIP Adv.8 055026
[19] Joishi C, Rafique S, Xia Z, Han L, Krishnamoorthy S, Zhang Y, Lodha S, Zhao H and Rajan S 2018 Appl. Phys. Express 11 031101
[20] Sasaki K, Wakimoto D, Thieu Q T, Koishikawa Y, Kuramata A, Higashiwaki M and Yamakoshi S 2017 IEEE Electron Device Lett. 38783
[21] Kasu M, Oshima T, Hanada K, Moribayashi T, Hashiguchi A, Oishi T,Koshi K, Sasaki K, Kuramata A and Ueda O 2017 Jpn. J. Appl. Phys.56 091101
[22] Kasu M, Hanada K, Moribayashi T, Hashiguchi A, Oshima T, Oishi T,Koshi K, Sasaki K, Kuramata A and Ueda O 2016 Jpn. J. Appl. Phys.55 1202BB
[23] Oishi T, Harada K, Koga Y and Kasu M 2016 Jpn. J. Appl. Phys. 55030305
[24] He Q, Mu W, Dong H, Long S, Jia Z, Lv H, Liu Q, Tang M, Tao X and Liu M 2017 Appl. Phys. Lett. 110 093503
[25] Rathkanthiwar S, Kalra A, Solanke S V, Mohta N, Muralidharan R,Raghavan S and Nath D N 2017 J. Appl. Phys. 121 164502
[26] Hudait M and Krupanidhi S 2001 Phys. B:Condens. Matter 307 125
[27] Chiu F C 2014 Adv. Mater. Sci. Eng. 7 1
[28] Arslan E, Biitiin S and Ozbay E 2009 Appl. Phys. Lett. 94 142106
[29] Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703
[30] Sun X, Li D, Jiang H, Li Z, Song H, Chen Y and Miao G 2011 Appl.Phys. Lett. 98 121117
[31] Sang L W, Ren B, Sumiya M, Liao M Y, Koide Y, Tanaka A, Cho Y J,Harada Y, Nabatame T, Sekiguchi T, Usami S, Honda Y and Amano H2017 Appl. Phys. Lett. 111 122102
[32] Sang L, Liao M, Koide Y and Sumiya M 2011 Appl. Phys. Lett. 98103502
[33] Freeouf J L, Jackson T N, Laux S E and Woodall J M 1982 J. Vac. Sci.Technol. 21 570
[34] Ohdomari I and Tu K N 1980 J. Appl. Phys. 51 3735