Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
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摘要
High indium semipolar(1122) and polar(0001) In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface(1122)is larger than that of the surface(0001), which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the(0001) surface with island-like morphology shows inhomogeneous indium incorporation, while the(1122) surface with a spiral-like morphology shows a better homogeneous In composition.This feature is also demonstrated by the monochromatic cathodoluminescence map.
High indium semipolar(1122) and polar(0001) In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface(1122)is larger than that of the surface(0001), which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the(0001) surface with island-like morphology shows inhomogeneous indium incorporation, while the(1122) surface with a spiral-like morphology shows a better homogeneous In composition.This feature is also demonstrated by the monochromatic cathodoluminescence map.
High indium semipolar(1122) and polar(0001) In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The morphology evolution, structural and optical characteristics are also studied. The indium content in the layer of the surface(1122)is larger than that of the surface(0001), which is confirmed by reciprocal space map, photoluminescence spectrum and secondary ion mass spectrometer. Additionally, the(0001) surface with island-like morphology shows inhomogeneous indium incorporation, while the(1122) surface with a spiral-like morphology shows a better homogeneous In composition.This feature is also demonstrated by the monochromatic cathodoluminescence map.
引文
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[3]Xu S R,Hao Y,Zhang J C,Zhou X W,Cao Y R,Ou X X,Mao W,Du D C and Wang H 2010 Chin.Phys.B 19 107204
[4]Waltereit P,Brandt O,Trampert A,Grahn H T,Menniger J,Ramsteiner M,Reiche M and Ploog K H 2000 Nature 406 865
[5]Xu S R,Hao Y,Zhang J C,Jiang T,Yang L A,Lu X L and Lin Z Y2013 Nano Lett.13 365
[6]Okamoto K,Kashiwagi J,Tanaka T and Kubota M 2009 Appl.Phys.Lett.94 071105
[7]Enya Y,Yoshizumi Y,Kyono T,Akita K,Ueno M,Adachi M,Sumitomo T,Tokuyama S,Ikegami T,Katayama K and Nakamura T 2009Appl.Phys.Express 2 082101
[8]Kyono T,Yoshizumi Y,Enya Y,Adachi M,Tokuyama S,Ueno M,Katayama K and Nakamura T 2010 Appl.Phys.Express 3 011003
[9]Yamamoto S,Zhao Y,Pan C C,Chung R B,Fujito K,Sonoda J,Denbaars S P and Nakamura S 2010 Appl.Phys.Express 3 122102
[10]Zhao Y,Tanaka T,Yan Q,Huang C Y,Chung R B,Pan C C,Fujito K,Feezell D,Walle C G V,Speck J S,Den Baars S P and Nakamura S2011 Appl.Phys.Lett.99 051109
[11]Zhao Y,Tanaka S,Pan C C,Fujito K,Feezell D,Speck J S,Den Baars S P and Nakamura S 2011 Appl.Phys.Express 4 082104
[12]Funato M,Ueda M,Kawakami Y,Narukawa Y,Kosugi T,Takahashi Mand Mukai T 2006 Jpn.J.Appl.Phys.45 L659
[13]Xu S R,Zhao Y,Jiang T,Zhang J C,Li P X and Hao Y 2016 Chin.Phys.Lett.33 068102
[14]Lee S N,Kim K K,Nam O H,Kim J H and Kim H 2010 Phys.Status Solidi B 7 2043
[15]Oh D S,Jong J J,Nam O,Song K M and Lee S M 2011 J.Cryst.Growth 326 33
[16]Benjamin L,Wang D,Sheng K Y and Han J 2015 Phys.Status Solidi B 9 13
[17]Zhang Y C,Zhou X W,Xu S R,Zhang J F,Zhang J C and Hao Y 2016Appl.Phys.Express 9 061003
[18]Zhang Y C,Zhou X W,Xu S R,Wang Z Z,Zhao Y,Zhang J F,Chen DZ,Zhang J C and Hao Y 2015 Appl.Phys.Lett.106 152101
[19]Ploch S,Wernicke T,Dinh D V,Pristovsek M and Kneissl M 2012 J.Appl.Phys.111 033526
[20]Neugebauer J 2001 Phys.Status Solidi B 227 93
[21]Vickers M E,Kappers M J,Datta R,Mcaleese C,Smeeton T M and Rayment F D G 2005 J.Phys.D:Appl.Phys.38 99
[22]Romanov A E,Young E C,Wu F,Anurag T,Gallinat C S,Nakamura S,Den Baars S P and Speck J S 2012 J.Appl.Phys.109 103522
[23]Schuster M,Gervais P O,Jobst B,Hsler W,Averbeck R,Riechert H,Iberl A and Stmmer R 1999 J.Phys.D:Appl.Phys.32 56
[24]Pereira S,Correia M R,Pereira E,O’Donnell K P,Martin R W,White M E,Alves E,Sequeira A D and Franco N 2002 Mater.Sci.Eng.B 93163
[25]Bhat R and Guryanov G M 2015 J.Cryst.Growth 433 7
[26]Selke H,Amirsawadkouhi M,Ryder P L,Bttcher T,Einfeldt S,Hommel D and Bertram F 1999 J.Christen.Mater.Sci.Eng.B 59 279
[27]Damilano B and Gil B 2015 J.Phys.D:Appl.Phys.48 403001
[28]D O Demchenko,I C Diallo and M A Reshchikov 2016 J.Appl.Phys.119 035702
[29]Northrup J E 2009 Appl.Phys.Lett.95 133107
[30]Yayama T,Kangawa Y,Kakimoto K and Koukitu A 2013 Jpn.J.Appl.Phys.45 08JC02
[31]Durnev M V,Omelchenko A V,Yakovlev E V,Evstratov I Y and Karpov S Y 2011 Phys.Status Solidi A 208 2671
[32]Dinh D V,Pristovsek M and Kneissl M 2015 Phys.Status Solidi B 8 1
[33]Dinh D V,Oehler F,Zubialevich V Z,Kappers M J,Alam S N,Caliebe M,Scholtz F,Humphreys C J and Parbrook P J 2014 J.Appl.Phys.116153505
[34]Wernicke T,Schade L,Netzel C,Rass J,Hoffmann V,Ploch S,Knauer A,Weyers M,Schwarz U and Kneissl M 2012 Semicond.Sci.Technol.27 024014
[35]Browne D A,Young E C,Lang J R,Hurni1C A and Speck J S 2012 J.Vac.Sci.Technol.A 30 041513