一种SiGe BiCMOS 3级级联60GHz LNA
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摘要
基于0.18μm SiGe BiCMOS工艺,设计了一种高增益单端3级级联60GHz低噪声放大器。级间匹配采用LC谐振,以减小传输损耗,引入的级间电感L与上级输出寄生电容、下级输入寄生电容谐振,以减小寄生效应的影响。在3.3V供电电压下,60GHz频率处的功率增益S_(21)达到21.8dB,噪声系数NF为6.1dB;在58~65GHz频段内,输入和输出反射系数S_(11)和S_(22)均小于-10dB。
A high gain three stage cascaded and single ended 60 GHz LNA was designed in a 0.18μm SiGe BiCMOS technology.The LCresonance was used in the inter-stage matching to reduce the transmission loss.The inductor in the inter-stage resonated with the front stage's output parasitic capacitance and the back stage's input parasitic capacitance,so as to reduce the parasitic effect.At a 3.3Vvoltage supply,S_(21) and the noise figure NF were achieved 21.8dB and 6.1dB respectively in operating frequency of 60 GHz.Both the input and output return loss S_(11) and S_(22) were below-10 dB from 58 GHz to 65 GHz.
A high gain three stage cascaded and single ended 60 GHz LNA was designed in a 0.18μm SiGe BiCMOS technology.The LCresonance was used in the inter-stage matching to reduce the transmission loss.The inductor in the inter-stage resonated with the front stage's output parasitic capacitance and the back stage's input parasitic capacitance,so as to reduce the parasitic effect.At a 3.3Vvoltage supply,S_(21) and the noise figure NF were achieved 21.8dB and 6.1dB respectively in operating frequency of 60 GHz.Both the input and output return loss S_(11) and S_(22) were below-10 dB from 58 GHz to 65 GHz.
引文
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[2]DOAN C H,EMAMI S,NIKNEJAD A M,et al.Design of CMOS for 60GHz applications[C]∥IEEE Int Sol Sta Circ Conf.San Francisco,CA,USA.2004,1:440-538.
[3]RAZAVI B.A 60 GHz direct-conversion CMOS receiver[C]∥IEEE Int Sol Sta Circ Conf.San Francisco,CA,USA.2005,1:400-606.
[4]YAO T,GORDON M,YAU K,et al.60 GHz PA and LNA in 90 nm RF CMOS[C]∥IEEE RFIC Symp.San Francisco,CA,USA.2006:1-4.
[5]SUZUKI T,KAWANO Y,SATO M,et al.60and 77GHz power amplifiers in standard 90nm CMOS[C]∥IEEE Int Sol Sta Circ Conf.San Francisco,CA,USA.2008:562-636.
[6]LI N,OKADA K,SUZUKI T,et al.A three-stage 60GHz CMOS LNA using dual noise-matching technique for 5dB NF[C]∥APMC.Hongkong,China.2008:1-4.
[7]TO K,WELCH P,SCHEITLIN D,et al.60 GHz LNA and 15 GHz VCO design for use in broadband millimeter-wave WPAN system[C]∥IEEE Bipolar/BiCMOS Circ&Technol Meet.Boston,MA,USA.2007:210-213.
[8]REYNOLDS S K,FLOYD B A,PFEIFFER U R,et al.A silicon 60-GHz receiver and transmitter chipset for broadband communications[J].IEEE J Sol Sta Circ,2006,41(12):2820-2830.