基于Ge插入层优化Al诱导结晶生长多晶Ge薄膜的研究
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摘要
在低温条件下利用Al诱导结晶在绝缘衬底上生长高晶体质量的多晶Ge薄膜.使用厚度为1~10 nm的Ge插入层可以改善多晶Ge薄膜的生长条件,Ge插入层放置在Al层的下方.使用Ge插入层的目的是提高Ge原子在Al层中的超饱和浓度.Ge插入层可以在275°C的低温下产生Al诱导结晶.Ge插入层可以导致较高的成核率,厚度大于3 nm的Ge插入层可以产生大量的Ge晶体小颗粒,厚度为1 nm的Ge插入层可以促使多晶Ge薄膜快速生长,并产生直径为100μm的Ge晶体大颗粒.从电子背散射衍射(EBSD)测量中可知,Al诱导结晶生长的多晶Ge薄膜具有良好的(111)晶向.
Al-induced crystallization enables ploy-Ge thin films crystallization which grow on insulators under low temperature.We investigated the promotion growth of ploy-Ge thin films by Ge insertion layers which are 1–10 nm thicknesses,these layers are initially inserted below the Al layer.These Ge insertion layers improved the supersaturation of Ge atoms in Al layer,which results in Al-induced crystallization at the low temperature of 275°C.When the thickness of Ge insertion layers over 3 nm can result in a lot of small grains because of the higher nucleation ratio.However,the thickness of Ge insertion layer about 1 nm can accomplish a promotion growth and yield a large of big grains over 100μm in diameter.Moreover,in the measurement of electron backscatter diffraction,the ploy-Ge thin films were highly(111) crystal orientation.
Al-induced crystallization enables ploy-Ge thin films crystallization which grow on insulators under low temperature.We investigated the promotion growth of ploy-Ge thin films by Ge insertion layers which are 1–10 nm thicknesses,these layers are initially inserted below the Al layer.These Ge insertion layers improved the supersaturation of Ge atoms in Al layer,which results in Al-induced crystallization at the low temperature of 275°C.When the thickness of Ge insertion layers over 3 nm can result in a lot of small grains because of the higher nucleation ratio.However,the thickness of Ge insertion layer about 1 nm can accomplish a promotion growth and yield a large of big grains over 100μm in diameter.Moreover,in the measurement of electron backscatter diffraction,the ploy-Ge thin films were highly(111) crystal orientation.
引文
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[17]BIRAJDAR B I,ANTESBERGER T,BUTZ B,et al.Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange[J].Scr Mater,2012,66(8):550-553.
[18]TOKO K,KUROSAWA M,SAITOH N,et al Highly(111)-oriented Ge thin films on insulators formed by Al-induced crystallization[J].Appl Phys Lett,2012,101(7):192114.
[2]SANADA T,NAKAKITA Y,TAKENAKA M,et al.Surface orientation dependence of interface properties of GeO_2/Ge metal oxide semiconductor structures fabricated by thermal oxidation[J].J Appl Phys,2009,106(7):073716-073722.
[3]FUKATA N,SATO K,MITOME M,et al.Doping and Raman characterization of boron and phosphorus atoms in germanium nanowires[J].ACS Nano,2010,4(7):3807-3822.
[4]TOKO K,NAKAO I,SADOH T,et al.Electrical properties of poly-Ge on glass substrate grown by two-step solidphase crystallization[J].Solid-State Electron,2009,53(11):1159-1164.
[5]JUNG M,OKADA A,SAITO T,et al.On the Controlling Mechanism of Preferential Orientation of PolycrystallineSilicon Thin Films Grown by Aluminum-Induced Crystallization[J].Appl Phys Express,2010,3(9):095803-095805.
[6]SUGIMOTO Y,TAKATA N,HIROTA T,et al.LowTemperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface[J].Jpn J Appl Phys,2005,44(44):4770-4775.
[7]SARIKOV A,SCHNEIDER J,BERGHOLD J,et al.A kinetic simulation study of the mechanisms of aluminum induced layer exchange process[J].J Appl Phys,2010,107(11):114318-114328.
[8]KUROSA W A M,K A W ABATA N,SADOH T,et al.Orien-tation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation[J].Appl Phys Lett,2009,95(13):132103-132105.
[9]NUMATA R,TOKO K,OYA N,et al.Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange[J].Jpn J Appl Phys,2014,53(4S):04EH03.
[10]PENG S,HU D,HE D.Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization[J].Appl Surf Sci,2012,258(16):6003-6006.
[11]LI C,CHEN C,CHEN Z,et al.Al-Induced Crystallization of Amorphous Ge and Formation of Fractal Ge Micro-/Nanoclusters[J].Inorg Chem,2012,51(15):8473.
[12]TOKO K,FUKATA K,NAKAZAWA,et al.Tempera-ture dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates[J].J Cryst Growth,2013,372(B10):189-192.
[13]NUMATA R,TOKO K,NAKAZAWA K,et al.Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer[J].Thin Solid Films,2014,557(5):143-146.
[14]OKADA A,TOKO K,HARA K O,et al.Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO_2 insertion layer thickness[J].J Cryst Growth,2012,356(1):65-69.
[15]WANG Z M,WANG J Y,JEURGENS L P H,et al.Origins of stress development during metal-induced crystallization and layer exchange:Annealing amorphous Ge/crystalline Al bilayers[J].Acta Mater,2008,56(18):5047-5057.
[16]KUROSAWA M,TOKO K,KAWABATA N,et al.AlInduced oriented-crystallization of Si films on quartz and its application to epitaxial template for Ge growth[J].Solid-State Electron,2011,60(1):7-12.
[17]BIRAJDAR B I,ANTESBERGER T,BUTZ B,et al.Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange[J].Scr Mater,2012,66(8):550-553.
[18]TOKO K,KUROSAWA M,SAITOH N,et al Highly(111)-oriented Ge thin films on insulators formed by Al-induced crystallization[J].Appl Phys Lett,2012,101(7):192114.