基于Al诱导结晶在SiO_2衬底上生长(111)晶向平面多晶Ge薄膜的研究
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摘要
主要研究在SiO_2衬底上利用Al诱导结晶方法生长50 nm厚的多晶Ge薄膜的过程。研究的重点主要集中在对多晶Ge薄膜进行适当的低温退火处理以及Ge和Al薄膜之间的扩散控制层精准厚度的把握上。当把退火温度控制在325℃、AlO_x扩散控制层的厚度精准到1 nm时,就可以获得多晶Ge薄膜的(111)晶向平面所占的比例超过90%。此外,通过电子背散射衍射(EBSD)测量可以证实,利用该方法生长的多晶Ge薄膜的晶体颗粒的直径有12μm之大。研究结果说明利用Al诱导结晶方法在SiO_2衬底上生长的多晶Ge薄膜,如果将其用于制作电学和光学器件的模板层,将在半导体器件工艺上具有非常好的应用前景。
Al-induced crystallization of the poly-Ge thin films with 50 nm thickness on SiO_2 substrate was investigated in this paper. We principally focused on the lower annealing temperature of the poly-Ge thin films and the thickness of the diffusion control interlayer between Ge and Al thin films. The(111)-orientation planes ratio of the poly-Ge thin films has achieved over 90% by combining the lower annealing temperature(325℃)and the 1 nm thickness of the diffusion control interlayer(Al Ox). Moreover, the electron backscatter diffraction(EBSD) measurement demonstrated the achievement of the larger poly-Ge grains over 12 μm. Our research results should achieve the professional feasibility of fabricating the template of the electronic and optical devices with poly-Ge thin films grown on SiO_2 substrate by Al-induced crystallization.
Al-induced crystallization of the poly-Ge thin films with 50 nm thickness on SiO_2 substrate was investigated in this paper. We principally focused on the lower annealing temperature of the poly-Ge thin films and the thickness of the diffusion control interlayer between Ge and Al thin films. The(111)-orientation planes ratio of the poly-Ge thin films has achieved over 90% by combining the lower annealing temperature(325℃)and the 1 nm thickness of the diffusion control interlayer(Al Ox). Moreover, the electron backscatter diffraction(EBSD) measurement demonstrated the achievement of the larger poly-Ge grains over 12 μm. Our research results should achieve the professional feasibility of fabricating the template of the electronic and optical devices with poly-Ge thin films grown on SiO_2 substrate by Al-induced crystallization.
引文
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[6]董少光,庄君活,潘浩贤,等.基于金属诱导结晶生长多晶Ge薄膜的成核机理与动力学特征[J].佛山科学技术学院学报(自然科学版),2017,35(4):14-22.
[7]KUROSAWA M,KAWABATA N,SADOH T,et al.Enhanced Interfacial Nucleation in Al-Induced Crystallization for(111)Oriented Si1-x Gex(0≤x≤1)Films on Insulating Substrates[J].ECS Journal of Solid State Science and Technology,2012,1(3):144-147.
[8]HU S,MARSHALL A F,MCINTYRE P C.Interface-controlled layer exchange in metal induced crystallization of germanium thin films[J].Appl Phys Lett,2010,97:082104.
[9]DONG S G,ZHUANG J H,ZENG Y G.The Larger Grain and(111)-Orientation Planes of Poly-Ge Thin Film Grown on Si O2Substrate by Al-Induced Crystallization[J].J Mater Sci Chem Eng,2018,6:22-32.
[10]董少光,庄君活,陈晓涛,等.基于Ge插入层优化Al诱导结晶生长多晶Ge薄膜的研究[J].嘉应学院学报(自然科学),2017,35(8):31-36.
[11]JUNG M,OKADA A,SAITO T,et al.On the Controlling Mechanism of Preferential Orientation of Polycrystalline Silicon Thin Films Grown by Aluminum Induced Crystallization[J].Appl Phys Express,2010,3:095803.
[12]GERMAIN P,ZELLAMA K,SQUELARD S,et al.Crystallization in amorphous germanium[J].J Appl Phys,1979,50(11):6986.
[13]STEKOLNIKOV A A,FURTHMULLER J,BECHSTEDT F.Absolute surface energies of group-IV semiconductors:Dependence on orientation and reconstruction[J].Phys Rev B,2002,65:115318.
[14]OYA N,TOKO K,SAITOH N,et al.Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization[J].Appl Phys Lett,2014,104:262107.
[15]PARK J H,Suzuki T,KUROSAWA M,et al.Nucleation controlled gold induced crystallization for selective formation of Ge(100)and(111)on insulator at low temperature(~250℃)[J].Appl Phys Lett,2013,103:082102.
[16]SZE S M.Physics of Semiconductor Devices[M].2nd ed.New York:Wiley,1981,Chap 1:11.
[2]KUROSAWA M,SADOH T,MIYAO M.Comprehensive study of Al-induced layer exchange growth for orientation controlled Si crystals on Si O2substrates[J].J Appl Phys,2014,116:173510.
[3]NISHIMURA T,LEE C H,TABATA T,et al.High Electron Mobility Ge n-Channel Metal Oxide Semiconductor Field Effect Transistors with High Pressure Oxidized Y2O3[J].Appl Phys Express,2011,4:064201.
[4]KUROSAWA M,TOKO K,KAWABATA N,et al.Al-Induced oriented crystallization of Si films on quartz and its application to epitaxial template for Ge growth[J].Solid-State Electron,2011,60(1):7-12.
[5]PENG S L,HU D,HE D.Low-temperature preparation of polycrystalline germanium thin films by Al induced crystallization[J].Appl Surf Sci,2012,258(16):6003-6006.
[6]董少光,庄君活,潘浩贤,等.基于金属诱导结晶生长多晶Ge薄膜的成核机理与动力学特征[J].佛山科学技术学院学报(自然科学版),2017,35(4):14-22.
[7]KUROSAWA M,KAWABATA N,SADOH T,et al.Enhanced Interfacial Nucleation in Al-Induced Crystallization for(111)Oriented Si1-x Gex(0≤x≤1)Films on Insulating Substrates[J].ECS Journal of Solid State Science and Technology,2012,1(3):144-147.
[8]HU S,MARSHALL A F,MCINTYRE P C.Interface-controlled layer exchange in metal induced crystallization of germanium thin films[J].Appl Phys Lett,2010,97:082104.
[9]DONG S G,ZHUANG J H,ZENG Y G.The Larger Grain and(111)-Orientation Planes of Poly-Ge Thin Film Grown on Si O2Substrate by Al-Induced Crystallization[J].J Mater Sci Chem Eng,2018,6:22-32.
[10]董少光,庄君活,陈晓涛,等.基于Ge插入层优化Al诱导结晶生长多晶Ge薄膜的研究[J].嘉应学院学报(自然科学),2017,35(8):31-36.
[11]JUNG M,OKADA A,SAITO T,et al.On the Controlling Mechanism of Preferential Orientation of Polycrystalline Silicon Thin Films Grown by Aluminum Induced Crystallization[J].Appl Phys Express,2010,3:095803.
[12]GERMAIN P,ZELLAMA K,SQUELARD S,et al.Crystallization in amorphous germanium[J].J Appl Phys,1979,50(11):6986.
[13]STEKOLNIKOV A A,FURTHMULLER J,BECHSTEDT F.Absolute surface energies of group-IV semiconductors:Dependence on orientation and reconstruction[J].Phys Rev B,2002,65:115318.
[14]OYA N,TOKO K,SAITOH N,et al.Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization[J].Appl Phys Lett,2014,104:262107.
[15]PARK J H,Suzuki T,KUROSAWA M,et al.Nucleation controlled gold induced crystallization for selective formation of Ge(100)and(111)on insulator at low temperature(~250℃)[J].Appl Phys Lett,2013,103:082102.
[16]SZE S M.Physics of Semiconductor Devices[M].2nd ed.New York:Wiley,1981,Chap 1:11.