SiGe BiCMOS线性器件脉冲激光单粒子瞬态效应研究
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摘要
验证SiGe BiCMOS工艺线性器件的单粒子瞬态(Single Event Transient, SET)效应敏感性,选取典型运算放大器THS4304和稳压器TPS760进行了脉冲激光试验研究。试验中,通过能量逐渐逼近方法确定了其诱发SET效应的激光阈值能量,并通过逐点扫描的办法分析了器件内部单粒子效应敏感区域,并在此基础上分析了脉冲激光能量与SET脉冲的相互关系,获得了单粒子效应截面,为SiGe BiCMOS工艺器件在卫星电子系统的筛选应用以及抗辐射加固设计提供数据参考。
To verify the sensitivity of the single event transient effects of SiGe BiCMOS linear devices, a typical operational amplifier THS4304 and a voltage regulator TPS760 were selected to study the single event effects with pulsed laser. In the experiments, a method was proposed to determine the laser threshold energy of single event transient by gradual changing energy. And the sensitive region of single event effects within the device was analyzed by point-by-step scanning method. On this basis, the interaction between the pulse laser energy and the single event transient was analyzed, and the single event effects cross section was obtained, which provided a reference for the selection and application of the SiGe BiCMOS devices in the satellite electronic system and the design of the radiation hardening.
To verify the sensitivity of the single event transient effects of SiGe BiCMOS linear devices, a typical operational amplifier THS4304 and a voltage regulator TPS760 were selected to study the single event effects with pulsed laser. In the experiments, a method was proposed to determine the laser threshold energy of single event transient by gradual changing energy. And the sensitive region of single event effects within the device was analyzed by point-by-step scanning method. On this basis, the interaction between the pulse laser energy and the single event transient was analyzed, and the single event effects cross section was obtained, which provided a reference for the selection and application of the SiGe BiCMOS devices in the satellite electronic system and the design of the radiation hardening.
引文
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[2]Rao J B L,Mital R,Patel D P,et al.Low-cost phased array antenna for satellite communications on mobile earth stations[C]//IEEE International Symposium on Phased Array Systems&Technology,2013:214-219.
[3]Zhang Jinxin,Guo Hongxia,Wen Lin,et al.Influencing factors of SiGe heterojunction bipolar transistor single-even effect in laser microbeam simulation test[J].High Powe Laser and Particle Beams,2013,25(9):2433-2438.张晋新,郭红霞,文林,等.锗硅异质结晶体管单粒子效应激光微束模拟[J].强激光与粒子束,2013,25(9):2433-2438.
[4]Cao Zhou,Xue Yuxiong,Yang Shiyu,et al.Laser simulation of single event effects[J].Vacuum and Cryogenics,2006,12(3):166-172.(in Chinese)曹洲,薛玉雄,杨世宇,等.单粒子效应激光模拟试验技术研究[J].真空与低温,2006,12(3):166-172.
[5]Chugg A,Jones R,Moutrie M,et al.Probing the chargecollection sensitivity profile using a picosecond pulsed lase at a range of wavelength[J].IEEE Transactions on Nuclea Science,2002,49(6):2969-2976.
[6]Buchner Stephen P,Florent Miller,Vincent Pouget,et al Pulsed-laser testing for single-event effects investigations[J]IEEE Transactions on Nuclear Science,2013,60(3):1852-1875.
[7]Pease R L,Sternberg A L,Boulghassoul Y,et al Comparison of SET′s in bipolar linear circuits generated with an ion microbeam,laser light and circuit simulation[J]IEEE Transactions on Nuclear Science,2002,49(6)3163-3170.
[8]Wang Dekun,Cao Zhou,Liu Hainan,et al.Backside piuse laser testing for single event effect[J].Atomic Energy Science and Technology,2011,45(7):884-887.(in Chinese王德坤,曹洲,刘海南,等.脉冲激光背照射单粒子效应实验研究[J].原子能科学技术,2011,45(7):884-887.
[9]Egorov A N,Chumakov A I,Mavritskiy O B,et al Femtosecond laser simulation facility for SEE IC testing[C]/2014 IEEE Radiation Effects Data Workshop Record,2014247-250.
[10]Gordienko A V,Mavritskii O B,Egorov A N,et al Correlation of the ionisation response at selected points of ICsensitive regions with SEE sensitivity parameters under pulsed laser irradiation[J].Quantum Electronics,2014,44(12):1173-1178.
[11]Armstrong S E,Loveless T D,Hicks J R,et al.Phasedependent single-event sensitivity analysis of high-speed AMS circuits extracted from asynchronous measurements[J]IEEE Transactions on Nuclear Science,2010,58(6)1066-1071.
[12]Wang Hongbo,Li Qin.Radiation effects and protection technology for optical componentsof fiber optic gyroscope[J]Infrared and Laser Engineering,2015,44(2):682-687.(in Chinese)王洪波,李勤.光纤陀螺光学器件的空间辐射效应及防护技术[J].红外与激光工程,2015,44(2):682-687.
[13]Zhang Hao,Wang Xinsheng,Li Bo,et al.Research on single event latchup protection technology for micro-satellit[J].Infrared and Laser Engineering,2015,44(5):1444-1449.(in Chinese)张昊,王新升,李博,等.微小卫星单粒子闩锁防护技术研究[J].红外与激光工程,2015,44(5):1444-1449.