GaN-based ultraviolet microdisk laser diode grown on Si
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摘要
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into "sandwich-like" microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into "sandwich-like" microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.
This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into "sandwich-like" microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.
引文
1.H.Yoshida,Y.Yamashita,M.Kuwabara,and H.Kan,“A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode,”Nat.Photonics 2,551-554(2008).
2.M.Kneissl,D.W.Treat,M.Teepe,N.Miyashita,and N.M.Johnson,“Continuous-wave operation of ultraviolet InGaN-InAlGaN multiplequantum-well laser diodes,”Appl.Phys.Lett.82,2386-2388(2003).
3.D.B.Li,K.Jiang,X.J.Sun,and C.L.Guo,“AlGaN photonics:recent advances in materials and ultraviolet devices,”Adv.Opt.Photon.10,43-110(2018).
4.D.G.Zhao,J.Yang,Z.S.Liu,P.Chen,J.J.Zhu,D.S.Jiang,Y.S.Shi,H.Wang,L.H.Duan,L.Q.Zhang,and H.Yang,“Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,”J.Semicond.38,051001(2017).
5.W.-S.Won,L.G.Tran,W.-T.Park,K.-K.Kim,C.S.Shin,N.Kim,Y.-J.Kim,and Y.-J.Yoon,“UV-LEDs for the disinfection and bio-sensing applications,”Int.J.Precis.Eng.Manuf.19,1901-1915(2018).
6.X.B.Sun,Z.Y.Zhang,A.Chaaban,T.K.Ng,C.Shen,R.Chen,J.C.Yan,H.D.Sun,X.H.Li,J.X.Wang,J.M.Li,M.-S.Alouini,and B.S.Ooi,“71-Mbit/s ultraviolet-B LED communication link based on8-QAM-OFDM modulation,”Opt.Express 25,23267-23274(2017).
7.Z.Y.Xu and B.M.Sadler,“Ultraviolet communications potential and state-of-the-art,”IEEE Commun.Mag.46,67-73(2008).
8.K.J.Vahala,“Optical microcavities,”Nature 424,839-846(2003).
9.A.C.Tamboli,E.D.Haberer,R.Sharma,K.H.Lee,S.Nakamura,and E.L.Hu,“Room-temperature continuous-wave lasing in GaN/InGaNmicrodisks,”Nat.Photonics 1,61-64(2007).
10.P.Miao,Z.F.Zhang,J.B.Sun,W.Walasik,S.Longhi,N.M.Litchinitser,and L.Feng,“Orbital angular momentum microlaser,”Science 353,464-467(2016).
11.J.Sellés,V.Crepel,I.Roland,M.El Kurdi,X.Checoury,P.Boucaud,M.Mexis,M.Leroux,B.Damilano,S.Rennesson,F.Semond,B.Gayral,C.Brimont,and T.Guillet,“III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,”Appl.Phys.Lett.109,231101(2016).
12.C.-C.Chen,M.H.Shih,Y.-C.Yang,and H.-C.Kuo,“Ultraviolet Ga N-based microdisk laser with AlN/AlGaN distributed Bragg reflector,”Appl.Phys.Lett.96,151115(2010).
13.G.Y.Zhu,J.P.Li,J.T.Li,J.Y.Guo,J.Dai,C.X.Xu,and Y.J.Wang,“Single-mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk,”Opt.Lett.43,647-650(2018).
14.M.X.Feng,J.Wang,R.Zhou,Q.Sun,H.W.Gao,Y.Zhou,J.X.Liu,Y.N.Huang,S.M.Zhang,M.Ikeda,H.B.Wang,Y.T.Zhang,Y.J.Wang,and H.Yang,“On-chip integration of GaN-based laser,modulator,and photodetector grown on Si,”IEEE J.Sel.Top.Quantum Electron.24,8200305(2018).
15.M.X.Feng,Z.C.Li,J.Wang,R.Zhou,Q.Sun,X.J.Sun,D.B.Li,H.W.Gao,Y.Zhou,S.M.Zhang,D.Y.Li,L.Q.Zhang,J.P.Liu,H.B.Wang,M.Ikeda,X.H.Zheng,and H.Yang,“Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,”ACSPhoton.5,699-704(2018).
16.Y.Sun,K.Zhou,Q.Sun,J.P.Liu,M.X.Feng,Z.C.Li,Y.Zhou,L.Q.Zhang,D.Y.Li,S.M.Zhang,M.Ikeda,S.Liu,and H.Yang,“Roomtemperature continuous-wave electrically injected InGaN-based laser directly grown on Si,”Nat.Photonics 10,595-599(2016).
17.Y.Sun,K.Zhou,M.X.Feng,Z.C.Li,Y.Zhou,Q.Sun,J.P.Liu,L.Q.Zhang,D.Y.Li,X.J.Sun,D.B.Li,S.M.Zhang,M.Ikeda,and H.Yang,“Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,”Light:Sci.Appl.7,13(2018).
18.M.Athanasiou,R.Smith,B.Liu,and T.Wang,“Room temperature continuous-wave green lasing from an InGaN microdisk on silicon,”Sci.Rep.4,7250(2014).
19.H.W.Choi,K.N.Hui,P.T.Lai,P.Chen,X.H.Zhang,S.Tripathy,J.H.Teng,and S.J.Chua,“Lasing in GaN microdisks pivoted on Si,”Appl.Phys.Lett.89,211101(2006).
20.X.Liu,W.Fang,Y.Huang,X.H.Wu,S.T.Ho,H.Cao,and R.P.H.Chang,“Optically pumped ultraviolet microdisk laser on a silicon substrate,”Appl.Phys.Lett.84,2488-2490(2004).
21.J.Sellés,V.Crepel,I.Roland,M.El Kurdi,X.Checoury,P.Boucaud,M.Mexis,M.Leroux,B.Damilano,S.Rennesson,F.Semond,B.Gayral,C.Brimont,and T.Guillet,“III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,”Appl.Phys.Lett.109,231101(2016).
22.M.X.Feng,J.L.He,Q.Sun,H.W.Gao,Z.C.Li,Y.Zhou,J.P.Liu,S.M.Zhang,D.Y.Li,L.Q.Zhang,X.J.Sun,D.B.Li,H.B.Wang,M.Ikeda,R.X.Wang,and H.Yang,“Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,”Opt.Express26,5043-5051(2018).
23.Q.Sun,W.Yan,M.X.Feng,Z.C.Li,B.Feng,H.M.Zhao,and H.Yang,“GaN-on-Si blue/white LEDs:epitaxy,chip,and package,”J.Semicond.37,044006(2016).
24.B.Leung,J.Han,and S.Qian,“Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),”Phys.Status Solidi 11,437-441(2014).
25.D.B.Li,“GaN-on-Si laser diode:open up a new era of Si-based optical interconnections,”Sci.Bull.61,1723-1725(2016).
26.D.M.Zhao and D.G.Zhao,“Analysis of the growth of GaN epitaxy on silicon,”J.Semicond.39,033006(2018).
27.J.L.He,M.X.Feng,Y.Z.Zhong,J.Wang,R.Zhou,H.W.Gao,Y.Zhou,Q.Sun,J.X.Liu,Y.N.Huang,S.M.Zhang,H.B.Wang,M.Ikeda,and H.Yang,“On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,”Sci.Rep.8,7922(2018).
2.M.Kneissl,D.W.Treat,M.Teepe,N.Miyashita,and N.M.Johnson,“Continuous-wave operation of ultraviolet InGaN-InAlGaN multiplequantum-well laser diodes,”Appl.Phys.Lett.82,2386-2388(2003).
3.D.B.Li,K.Jiang,X.J.Sun,and C.L.Guo,“AlGaN photonics:recent advances in materials and ultraviolet devices,”Adv.Opt.Photon.10,43-110(2018).
4.D.G.Zhao,J.Yang,Z.S.Liu,P.Chen,J.J.Zhu,D.S.Jiang,Y.S.Shi,H.Wang,L.H.Duan,L.Q.Zhang,and H.Yang,“Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes,”J.Semicond.38,051001(2017).
5.W.-S.Won,L.G.Tran,W.-T.Park,K.-K.Kim,C.S.Shin,N.Kim,Y.-J.Kim,and Y.-J.Yoon,“UV-LEDs for the disinfection and bio-sensing applications,”Int.J.Precis.Eng.Manuf.19,1901-1915(2018).
6.X.B.Sun,Z.Y.Zhang,A.Chaaban,T.K.Ng,C.Shen,R.Chen,J.C.Yan,H.D.Sun,X.H.Li,J.X.Wang,J.M.Li,M.-S.Alouini,and B.S.Ooi,“71-Mbit/s ultraviolet-B LED communication link based on8-QAM-OFDM modulation,”Opt.Express 25,23267-23274(2017).
7.Z.Y.Xu and B.M.Sadler,“Ultraviolet communications potential and state-of-the-art,”IEEE Commun.Mag.46,67-73(2008).
8.K.J.Vahala,“Optical microcavities,”Nature 424,839-846(2003).
9.A.C.Tamboli,E.D.Haberer,R.Sharma,K.H.Lee,S.Nakamura,and E.L.Hu,“Room-temperature continuous-wave lasing in GaN/InGaNmicrodisks,”Nat.Photonics 1,61-64(2007).
10.P.Miao,Z.F.Zhang,J.B.Sun,W.Walasik,S.Longhi,N.M.Litchinitser,and L.Feng,“Orbital angular momentum microlaser,”Science 353,464-467(2016).
11.J.Sellés,V.Crepel,I.Roland,M.El Kurdi,X.Checoury,P.Boucaud,M.Mexis,M.Leroux,B.Damilano,S.Rennesson,F.Semond,B.Gayral,C.Brimont,and T.Guillet,“III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,”Appl.Phys.Lett.109,231101(2016).
12.C.-C.Chen,M.H.Shih,Y.-C.Yang,and H.-C.Kuo,“Ultraviolet Ga N-based microdisk laser with AlN/AlGaN distributed Bragg reflector,”Appl.Phys.Lett.96,151115(2010).
13.G.Y.Zhu,J.P.Li,J.T.Li,J.Y.Guo,J.Dai,C.X.Xu,and Y.J.Wang,“Single-mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk,”Opt.Lett.43,647-650(2018).
14.M.X.Feng,J.Wang,R.Zhou,Q.Sun,H.W.Gao,Y.Zhou,J.X.Liu,Y.N.Huang,S.M.Zhang,M.Ikeda,H.B.Wang,Y.T.Zhang,Y.J.Wang,and H.Yang,“On-chip integration of GaN-based laser,modulator,and photodetector grown on Si,”IEEE J.Sel.Top.Quantum Electron.24,8200305(2018).
15.M.X.Feng,Z.C.Li,J.Wang,R.Zhou,Q.Sun,X.J.Sun,D.B.Li,H.W.Gao,Y.Zhou,S.M.Zhang,D.Y.Li,L.Q.Zhang,J.P.Liu,H.B.Wang,M.Ikeda,X.H.Zheng,and H.Yang,“Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si,”ACSPhoton.5,699-704(2018).
16.Y.Sun,K.Zhou,Q.Sun,J.P.Liu,M.X.Feng,Z.C.Li,Y.Zhou,L.Q.Zhang,D.Y.Li,S.M.Zhang,M.Ikeda,S.Liu,and H.Yang,“Roomtemperature continuous-wave electrically injected InGaN-based laser directly grown on Si,”Nat.Photonics 10,595-599(2016).
17.Y.Sun,K.Zhou,M.X.Feng,Z.C.Li,Y.Zhou,Q.Sun,J.P.Liu,L.Q.Zhang,D.Y.Li,X.J.Sun,D.B.Li,S.M.Zhang,M.Ikeda,and H.Yang,“Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si,”Light:Sci.Appl.7,13(2018).
18.M.Athanasiou,R.Smith,B.Liu,and T.Wang,“Room temperature continuous-wave green lasing from an InGaN microdisk on silicon,”Sci.Rep.4,7250(2014).
19.H.W.Choi,K.N.Hui,P.T.Lai,P.Chen,X.H.Zhang,S.Tripathy,J.H.Teng,and S.J.Chua,“Lasing in GaN microdisks pivoted on Si,”Appl.Phys.Lett.89,211101(2006).
20.X.Liu,W.Fang,Y.Huang,X.H.Wu,S.T.Ho,H.Cao,and R.P.H.Chang,“Optically pumped ultraviolet microdisk laser on a silicon substrate,”Appl.Phys.Lett.84,2488-2490(2004).
21.J.Sellés,V.Crepel,I.Roland,M.El Kurdi,X.Checoury,P.Boucaud,M.Mexis,M.Leroux,B.Damilano,S.Rennesson,F.Semond,B.Gayral,C.Brimont,and T.Guillet,“III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet,”Appl.Phys.Lett.109,231101(2016).
22.M.X.Feng,J.L.He,Q.Sun,H.W.Gao,Z.C.Li,Y.Zhou,J.P.Liu,S.M.Zhang,D.Y.Li,L.Q.Zhang,X.J.Sun,D.B.Li,H.B.Wang,M.Ikeda,R.X.Wang,and H.Yang,“Room-temperature electrically pumped InGaN-based microdisk laser grown on Si,”Opt.Express26,5043-5051(2018).
23.Q.Sun,W.Yan,M.X.Feng,Z.C.Li,B.Feng,H.M.Zhao,and H.Yang,“GaN-on-Si blue/white LEDs:epitaxy,chip,and package,”J.Semicond.37,044006(2016).
24.B.Leung,J.Han,and S.Qian,“Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111),”Phys.Status Solidi 11,437-441(2014).
25.D.B.Li,“GaN-on-Si laser diode:open up a new era of Si-based optical interconnections,”Sci.Bull.61,1723-1725(2016).
26.D.M.Zhao and D.G.Zhao,“Analysis of the growth of GaN epitaxy on silicon,”J.Semicond.39,033006(2018).
27.J.L.He,M.X.Feng,Y.Z.Zhong,J.Wang,R.Zhou,H.W.Gao,Y.Zhou,Q.Sun,J.X.Liu,Y.N.Huang,S.M.Zhang,H.B.Wang,M.Ikeda,and H.Yang,“On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si,”Sci.Rep.8,7922(2018).