基于激光不同加载方式下CCD损伤特性的时间演化规律
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摘要
为了探究高功率连续激光作用下CCD的损伤特性随时间的演化规律,根据其结构特点和工作原理,建立了1.06μm连续激光辐照CCD的六层结构热力耦合三维模型。综合考虑了微透镜聚焦和铝膜开口率等因素的影响,通过改变CCD不同损伤阶段的激光辐照方式,数值模拟分析了CCD多层结构的层层损伤机理,研究了CCD各个损伤阶段的时间阈值,并与实验结果进行了对比。结果表明,微透镜聚焦光束阶段,微透镜由于熔点较低,发生熔融分解,CCD表现为点损伤;微透镜熔融阶段,失去聚光能力,在应力损伤和熔融损伤共同作用下,铝膜层熔融剥落,表现为纵向亮线损伤;铝膜层熔融剥落阶段,激光直接辐照在硅电极上,硅电极上表面熔融,造成布线电路的损伤,导致部分像元中的电荷无法转移,出现横向暗线损伤;最后,SiO_2绝缘层受剪切应力而断裂,使得硅电极和硅基底相互导通,造成完全损伤。实验与仿真结果趋势一致,误差较小,相互验证。
In order to explore characteristics of CCD detector, according to the structural characteristics of CCD detectors, we developed a six-layer-structure, thermal-coupling, mathematical physical 3 D model of a CCD detector that was irradiated by a 1.06 μm continuous laser. By changing the way of laser irradiating the CCD at different damage stages, the multi-layer damage mechanism of CCD detector was analyzed numerically and the time threshold was obtained. By comparison, the results demonstrated that due to melting the damage started from the microlens layer when the microlens focusing laser to photosensitive layer, causing the point damage of CCD. Then the aluminum film was fused and peeled by heat and stress after the microlens lost the ability to focus the beam, causing the vertical bright linear damage. With the molten Al film peeling off, the silicon electrode was irradiated directly and its surface was molted. Then the damaged wiring circuit made charges untransferable, causing the horizontal dark linear damage. Subsequently, the SiO_2 insulating layer was torn up by shear stress, which made the molten silicon electrode in the upper and the silicon substrate in the lower conduct together, causing the complete damage of CCD. Additionally, the experimental and simulation results show the same trend with small error and verify each other.
In order to explore characteristics of CCD detector, according to the structural characteristics of CCD detectors, we developed a six-layer-structure, thermal-coupling, mathematical physical 3 D model of a CCD detector that was irradiated by a 1.06 μm continuous laser. By changing the way of laser irradiating the CCD at different damage stages, the multi-layer damage mechanism of CCD detector was analyzed numerically and the time threshold was obtained. By comparison, the results demonstrated that due to melting the damage started from the microlens layer when the microlens focusing laser to photosensitive layer, causing the point damage of CCD. Then the aluminum film was fused and peeled by heat and stress after the microlens lost the ability to focus the beam, causing the vertical bright linear damage. With the molten Al film peeling off, the silicon electrode was irradiated directly and its surface was molted. Then the damaged wiring circuit made charges untransferable, causing the horizontal dark linear damage. Subsequently, the SiO_2 insulating layer was torn up by shear stress, which made the molten silicon electrode in the upper and the silicon substrate in the lower conduct together, causing the complete damage of CCD. Additionally, the experimental and simulation results show the same trend with small error and verify each other.
引文
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[15] LI F M,NATHAN A.Degradation behavior and damage mechanisms of CCD image sensor with deep-UV laser radiation [J].IEEE Trans.Electron Devices,2004,51(12):2229-2236.
[2] 毕娟,张喜和,倪晓武.长脉冲激光对组成CCD图像传感器的MOS光敏单元的硬破坏机理研究 [J].物理学报,2011,60(11):340-345.BI J,ZHANG X H,NI X W.Mechanism for long pulse laser-induced hard damage to the MOS pixel of CCD image sensor [J].Acta Phys.Sinica,2011,60(11):340-345.(in Chinese)
[3] 郝向南,李化,聂劲松,等.不同工作状态激光对可见光CCD的损伤实验 [J].光电工程,2012,39(9):113-118.HAO X N,LI H,NIE J S,et al..Experiment of visible CCD damaged by laser operating in different state [J].Opto-Electron.Eng.,2012,39(9):113-118.(in Chinese)
[4] CHEN G B,GU X Y,BI J.Numerical analysis of thermal effect in aluminum alloy by repetition frequency pulsed laser [J].Optik,2016,127(20):10115-10121.
[5] 聂劲松,王玺,李化,等.1.06 μm激光辐照CCD探测器的热力效应分析 [J].红外与激光工程,2013,42(S2):380-386.NIE J S,WANG X,LI H,et al..Thermal and mechanical damage in CCD detector induced by 1.06 μm laser [J].Infrared Laser Eng.,2013,42(S2):380-386.(in Chinese)
[6] ZHANG Z,CHENG X A,JIANG T,et al..A dazzling phenomenon of CW laser on linear CCD camera [J].Optik,2012,123(3):223-227.
[7] GAO L Z,ZHU Z W,SHAO Z Z,et al..Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation [J].Appl.Opt.,2013,52(31):7524-7529.
[8] LI Z W,WANG X,SHEN Z H,et al..Mechanisms for the millisecond laser-induced functional damage to silicon charge-coupled imaging sensors [J].Appl.Opt.,2015,54(3):378-388.
[9] LIM X,JING Y,TAN Y,et al..Study on the mechanism of a charge-coupled device detector irradiated by millisecond pulse laser under functional loss [J].Appl.Opt.,2016,55(6):1257-1261.
[10] CHEN G B,BI J.Modeling of temperature and thermal-stress of silicon irradiated by a long pulsed laser and its damage evaluation [J].Optik,2017,131:574-581.
[11] 孙承伟.激光辐照效应 [M].北京:国防工业出版社,2002:28-32.SUN C W.Laser Irradiation Effect [M].Beijing:National Defend Industry Press,2002:28-32.(in Chinese)
[12] HAN M,NIE J S,SUN K,et al..Experiment on the temporal evolution characteristics of a CCD multilayer structure irradiated by a 1.06 μm continuous laser [J].Appl.Opt.,2018,57(16):4415-4420.
[13] 张帆,牛燕雄,刘宁,等.激光辐照CCD温度场与热应力场的研究 [J].激光技术,2017,41(3):433-437.ZHANG F,NIU Y X,LIU N,et al..Research of temperature field and thermal stress field of CCD under laser irradiation [J].Laser Technol.,2017,41(3):433-437.(in Chinese)
[14] LI G,SHEN H B,LI L,et al..Laser-induced damages to charge coupled device detector using a high-repetition-rate and high-peak-power laser [J].Opt.Laser Technol.,2013,47:221-227.
[15] LI F M,NATHAN A.Degradation behavior and damage mechanisms of CCD image sensor with deep-UV laser radiation [J].IEEE Trans.Electron Devices,2004,51(12):2229-2236.