GaN基交流高压大功率LED芯片及其灯具的研制
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摘要
设计并制备了110V Ga N基交流高压LED芯片,阐述了其制作的关键工艺,并通过I-U-L曲线,近场光型等手段进行表征,该芯片具有良好的光电性能,通过两并两串方式封装在陶瓷支架并匹配相应的限流电阻组装成灯具,对比测试了灯具初态和稳态下的光电参数。
This paper presents the design and preparation of the alternating current high voltage chip(ACHV chip) based Ga N,and elaborates the critical process of its preparation,and its characterization of the performance with I-U-L curve and near-field patterns distribution.The result indicated that the AC-HV chips had good performance.After assembled as lamps with current limit resistor and packaged on frame based ceramic with two parallel and two series connection model,the performance of the lamps on the initial-state were compared with the steady-state.
This paper presents the design and preparation of the alternating current high voltage chip(ACHV chip) based Ga N,and elaborates the critical process of its preparation,and its characterization of the performance with I-U-L curve and near-field patterns distribution.The result indicated that the AC-HV chips had good performance.After assembled as lamps with current limit resistor and packaged on frame based ceramic with two parallel and two series connection model,the performance of the lamps on the initial-state were compared with the steady-state.
引文
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[10]HORI A,SUNAGA D,Ya,SATAKE A,et al.Temperature dependence of electroluminescence intensity of green and blue In Ga N singe-quantum-well light-emitting diodes[J].Appl.Phys.Lett.,2001,79(22):3723-3725.
[11]CAO X A,LEBOEUF S F,ROWLANEL L B.Temperature-dependence emission intensity and energy shift in In Ga N/Ga N multiple-quantum-well light-emitting diodes[J].Appl.Phys.Lett.,2003,82(21):3614-3616.
[2]牟丽霞,杨春霞,叶翔平,等.LED灯光生物安全性对比结果分析[J].照明工程学报,2016,27(5):9-12.
[3]李雅旻,郑胤建,谭星,等.不同光质补光对番茄、黄瓜幼苗生长的影响[J].照明工程学报,2016,27(5):68-71.
[4]Min-Ho Kim,Martin F.Schubert,Qi Dai,et al.Origin of efficiency droop in Ga N-based Light-emitting diodes[J].Appl.Phys.Lett.2007,91,183507.
[5]汪延明,徐林炜,谈健,等.In Ga N基发光二极管光效下降效应研究进展[J].激光与光电子学进展,2012,49:120002.
[6]KIM Hyunsoo,PARK Seong-Ju,HWANG Hyunsang.Effects of current spreading on the performance of Ga Nbased light-emitting diodes[J].IEEE Transaction on electron devices,2001,48(6):1065-1069.
[7]MALYUTENKO V K,BOLGOV S S,PODOLTSEV A D.Current crowding effect on the ideslity factor and efficincy droop in blue lateral In Ga N/Ga N light emitting diodes[J].Appl.Phys.Lett.,2010,97:251110.
[8]BOGDANOV M V,BULASHEVICHM K A,KHOKHLEV O V,et al.Current crowding effect on light extration efficency of thin-film LEDs[J].phys.stat.solidi(c),2010,7-8:2124-2126.
[9]GUO X,SCHUBERT E F.Current crowding and optical saturation effects in Ga In N/Ga N light-emitting diodes grown on insulating substrates[J].Appl.Phys.Lett.,2001,78(21):3337-3339.
[10]HORI A,SUNAGA D,Ya,SATAKE A,et al.Temperature dependence of electroluminescence intensity of green and blue In Ga N singe-quantum-well light-emitting diodes[J].Appl.Phys.Lett.,2001,79(22):3723-3725.
[11]CAO X A,LEBOEUF S F,ROWLANEL L B.Temperature-dependence emission intensity and energy shift in In Ga N/Ga N multiple-quantum-well light-emitting diodes[J].Appl.Phys.Lett.,2003,82(21):3614-3616.