Photoelectrochemical study of MoO_3 assorted morphology films formed by thermal evaporation
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摘要
Molybdenum oxide nanostructured thin films were grown on fluorine doped tin oxide(FTO), indium doped tin oxide(ITO) and ordinary glass substrates by thermal evaporation process without vacuum and catalysts using molybdenum trioxide(MoO_3) powder as a source material and oxygen as a carrier gas.Various morphologies including nanobelts, disks and hexagonal rod-like nanostructures were obtained by changing the source and substrate temperatures during the growth of MoO_3 thin films. Structural parameters, morphology, composition and surface features of the films were characterized by XRD, SEM, EDAX,XPS, AFM and Raman spectroscopy. The films were orthorhombic in structure with preferred orientation along(0 1 0) plane. Morphology analysis reveals randomly aligned nanobelts with 40 nm in thickness and a width of 800 nm and 3–12 mm in length. The disks have 1.5 μm diameters, 1 μm thickness and hexagonal rod-like nanostructures with a length, breath and width of 2 μm, 1 μm and 100 nm are formed. The samples were investigated under dark and photocurrent conditions in H_2SO_4 aqueous solution as a function of applied potential. The photocurrent density of samples prepared on ITO and FTO substrate samples were compared and the results are discussed.
Molybdenum oxide nanostructured thin films were grown on fluorine doped tin oxide(FTO), indium doped tin oxide(ITO) and ordinary glass substrates by thermal evaporation process without vacuum and catalysts using molybdenum trioxide(MoO_3) powder as a source material and oxygen as a carrier gas.Various morphologies including nanobelts, disks and hexagonal rod-like nanostructures were obtained by changing the source and substrate temperatures during the growth of MoO_3 thin films. Structural parameters, morphology, composition and surface features of the films were characterized by XRD, SEM, EDAX,XPS, AFM and Raman spectroscopy. The films were orthorhombic in structure with preferred orientation along(0 1 0) plane. Morphology analysis reveals randomly aligned nanobelts with 40 nm in thickness and a width of 800 nm and 3–12 mm in length. The disks have 1.5 μm diameters, 1 μm thickness and hexagonal rod-like nanostructures with a length, breath and width of 2 μm, 1 μm and 100 nm are formed. The samples were investigated under dark and photocurrent conditions in H_2SO_4 aqueous solution as a function of applied potential. The photocurrent density of samples prepared on ITO and FTO substrate samples were compared and the results are discussed.
Molybdenum oxide nanostructured thin films were grown on fluorine doped tin oxide(FTO), indium doped tin oxide(ITO) and ordinary glass substrates by thermal evaporation process without vacuum and catalysts using molybdenum trioxide(MoO_3) powder as a source material and oxygen as a carrier gas.Various morphologies including nanobelts, disks and hexagonal rod-like nanostructures were obtained by changing the source and substrate temperatures during the growth of MoO_3 thin films. Structural parameters, morphology, composition and surface features of the films were characterized by XRD, SEM, EDAX,XPS, AFM and Raman spectroscopy. The films were orthorhombic in structure with preferred orientation along(0 1 0) plane. Morphology analysis reveals randomly aligned nanobelts with 40 nm in thickness and a width of 800 nm and 3–12 mm in length. The disks have 1.5 μm diameters, 1 μm thickness and hexagonal rod-like nanostructures with a length, breath and width of 2 μm, 1 μm and 100 nm are formed. The samples were investigated under dark and photocurrent conditions in H_2SO_4 aqueous solution as a function of applied potential. The photocurrent density of samples prepared on ITO and FTO substrate samples were compared and the results are discussed.
引文
[1]E.Comini,G.Faglia,G.Sberveglieri,Z.Pan,Z.L.Wang,Appl.Phys.Lett.81(2002)1869-1871.
[2]P.Ivanov,J.Hubalek,K.Malysz,J.Prasek,X.Vilanova,E.Llobet,X Correig,Sens.Actuators B.100(2004)221-227.
[3]Ghenadii Korotcenkov,Mater.Sci.Eng.B.139(2007)1-23.
[4]S.M.Kanan,C.P.Tripp,Langmuir 18(2002)722-728.
[5]Neha Desai,Sawanta Mali,Vijay Kondalkar,Rahul Mane,Chang Hong,Popatrao Bhosale,J.Nanomed.Nanotechnol 6(2015)1-7.
[6]Popatrao N.Bhosale,et al.,RSC Adv 5(2015)40283-40296.
[7]Kai Huang,Qingtao Pan,Feng Yang,Shibi Ni,Deyan He,Appl.Surf.Sci.253(2007)8923-8927.
[8]Yong Shin Kim,Sens.Actuators B 137(2009)297-304.
[9]Camelia Matei Ghimbeu,Martine Lumbreras,Maryam Siadat,Joop Schoonman,Mater.Sci.Semi.Proc.13(2010)1.
[10]Wei-De Zhang,Wen-Hui Zhang,Xue-Yong Ma,J.Mater.Sci 44(2009)4677-4682.
[11]Shih Yuan Lin,Ying Chung Chen,Chih Ming Wang,Po-Tsung Hsieh,ShunChou Shih,Appl.Surf.Sci.255(2009)3868-3874.
[12]E.Comini,G.Sberveglieri,M.Ferroni,V.Guidi,G.Martinelli,Sens.Actuators B.93(2003)409-414.
[13]V.Nirupama,M.Chandrasekhar,P.Radhika,B.Sreedhar,S.Uthanna,J.Optoelectron.Adv.Mater.11(2009)320-325.
[14]R.S.Patil,M.D.Uplane,P.S.Patil,Int.J.Electrochem.Sci.3(2008)259-265.
[15]Hoa Nguyen,A.Sherif,El-Safty,J.Phys.Chem.C.115(2011)8466-8474.
[16]Mehdi Ranjbar,Azam Iraji zad,Seyyed Mohammad,Mahdavi,Appl.Phys.A.92(2008)627-634.
[17]P.A.Spevack,N.S.Mcintyre,J.Phys.Chem.96(1992)9029-9035.
[18]Kishorkumar V.Khot,Sawanta S.Mali,Rohini R.Kharade,Rahul M.Mane,Pramod S.Patil,Chang Kook Hong,Jin Hyeok Kim,Jaeyeong Heo,Popatrao N.Bhosale,J.Mater.Sci.:Mater.Electron 25(2014)5606-5617.
[19]K.V.Khot,S.S.Mali,R.M.Mane,P.S.Patil,Chang Kook Hong,Jin Hyeok Kim,Jaeyeong Heo,Popatrao N.Bhosale,J.Mater.Sci.:Mater.Electron 26(2015)6897-6906.
[20]Yung-Sen Lin,Jhen-Yi Lai,Tsung-Hsien Tsai,Pei-Ying Chuang,Yen-Cheng Chen,Thin Solid Films 519(2011)3875-3882.
[21]Sobia Ashraf,Christopher S.Blackman,Geoffrey Hyett,Ivan P.Parkin,J.Mater.Chem.16(2006)3575-3582.
[22]T.Siciliano,A.Tepore,E.Filippo,G.Micocci,M.Tepore,Mater.Chem.Phys.114(2009)687-691.
[23]Dongmei Ban,Ningsheng Xu,Shaozhi Deng,Jun Chen,Juncong She,J.Mater.Sci.Technol.26(2010)584-588.
[24]Zu Rong Dai,Zheng Wei Pan,Zhong L.Wang,Adv.Funct.Mater.13(2003)9-24.
[25]I.B.Troitskaia,T.A.Gavrilova,S.A.Gromilov,D.V.Sheglov,V.V.Atuchin,R.S.Vemuri,C.V.Ramana,Mater.Sci.Eng.B.174(2010)159-163.
[26]V.Nirupama,K.R.Gunasekhar,B.Sreedhar,S.Uthanna,Curr.Appl.Phys.10(2010)272-278.
[27]S.Subbarayudu,V.Madhavi,S.Uthanna,Adv.Mater.Lett.4(2013)637-642.
[28]S.H.Mohamed,O.Kappertz,J.M.Ngaruiya,T.P.Leervad Pedersen,R.Drese,M.Wuttig,Thin Solid Films 429(2003)135-143.
[29]Se Hee Lee,Maeng Je Seong,C.Edwin Tracy,Angelo Mascarenhas,J.Roland Pitts,Satyen K.Deb,Solid State Ionics 147(2002)129-133.
[30]N.Desikan,L.Huang,S.T.Oyama,J.Phys.Chem.95(1991)10050-10056.
[31]Perry A.Spevack,N.S.Mcintyre,J.Phys.Chem.97(1993)11020-11030.
[32]David Yao,Jian Zhen Ou,Kay Latham,Serge Zhuiykov,Anthony Peter O’Mullane,Kourosh Kalantar-zadeh,Cryst.Growth Des 12(2012)1865-1870.
[33]Jian Zhen Ou,Jos L Campbell,David Yao,Wojtek Wlodarski,Kourosh Kalantar-Zadeh,J.Phys.Chem.C.115(2011)10757-10763.
[34]O.Goiz,F.Chávez,C.Felipe,N.Morales,R.Pena Sierra,Mater.Sci.Eng.B.174(2010)174-176.
[35]K.P.S.S.Hembram,Rajesh Thomas,G.Mohan Rao,Appl.Surf.Sci.256(2009)419-422.
[36]R.Senthilkumar,T.Mahalingam,G.Ravi,Appl.Surf.Sci.362(2016)102-108.
[37]Chao-Sheng Hsu,Chih-Chieh Chan,Hung-Tai Huang,Chia-Hsiang Peng,Wen-Chia Hsu,Thin Solid Films 516(2008)4839-4844.
[38]C.V.Ramana,V.V.Atuchin,V.G.Kesler,V.A.Kochubey,L.D.Pokrovsky,V.Shutthanandan,U.Becker,R.C.Ewing,Appl.Surf.Sci.15(2007)5368-5374.
[39]H.M.Farveez Ahmed,Noor Shahina Begum,Bull.Mater.Sci.36(2013)45-49.
[40]Todd M.Mc Evoy,Keith J.Stevenson,Langmuir 192(2003)4316-4326.
[41]Richard L.Smith,Gregory S.Rohrer,J.Catal.163(1996)12-17.
[42]R.Sivakumar,V.Vijayan,V.Ganesan,M.Jayachandran,C.Sanjeeviraja,Smart Mater.Struct.14(2005)1204-1209.
[43]Hyeyoung Kim,Karuppanan Senthil,Kijung Yong,Chem.Phys 120(2010)452-455.
[44]Popatrao N.Bhosale,et al.,New J.Chem.38(2014)5964-5974.
[45]Wenzhang Li,Jie Li,Xuan Wang,Jun Ma,Qiyuan Chen,Int.J.Hydrogen Energy35(2010)13137-13145.
[46]W.Li,J.Li,X.Wang,S.Luo,J.Xiao,Q.Chen,Electrochim.Acta 56(2010)620-625.
[47]C.Das,I.Paramasivam,N.Liu,P.Schmuki,Electrochim.Acta 56(2011)10557-10561.
[48]Todd M.Mcevoy,Keith J.Stevenson,Langmuir 19(2003)4316-4326.
[49]K.R Murali,K.Srinivasan,D.C.Trivedi,Mater.Lett.59(2005)15-18.
[50]C.Soci,A.Zhang,B.Xiang,S.A.Aplin Dayeh,J.Park,X.Y.Bao,Y.H.Lo,D.Wang,Nano Lett 7(2007)1003-1009.
[51]B.Alotaibi,M.Harati,S.Fan,S.Zhao,H.P.T.Nguyen,M.G.Kibria,Z.Mi,Nanotechnology 24(2013)175401-175405.
[52]Toshiaki Mori,Akira Miyamoto,Naoki Takahashi,Masato Fukagaya,Tadashi Hattori,Yuichi Murakami,J.Phys.Chem.90(1986)5197-5201.
[53]P.Ivanov,J.Hubalek,K.Malysz,J.Prasek,X.Vilanova,E.Llobet,X.Correig,Sens.Actuators B 100(2004)221-227.
[54]C.Ruan,M.Paulose,O.K.Varghesev,C.A.Grimes,Sol.Energy Mater.Sol.Cells.90(2006)1283-1295.
[2]P.Ivanov,J.Hubalek,K.Malysz,J.Prasek,X.Vilanova,E.Llobet,X Correig,Sens.Actuators B.100(2004)221-227.
[3]Ghenadii Korotcenkov,Mater.Sci.Eng.B.139(2007)1-23.
[4]S.M.Kanan,C.P.Tripp,Langmuir 18(2002)722-728.
[5]Neha Desai,Sawanta Mali,Vijay Kondalkar,Rahul Mane,Chang Hong,Popatrao Bhosale,J.Nanomed.Nanotechnol 6(2015)1-7.
[6]Popatrao N.Bhosale,et al.,RSC Adv 5(2015)40283-40296.
[7]Kai Huang,Qingtao Pan,Feng Yang,Shibi Ni,Deyan He,Appl.Surf.Sci.253(2007)8923-8927.
[8]Yong Shin Kim,Sens.Actuators B 137(2009)297-304.
[9]Camelia Matei Ghimbeu,Martine Lumbreras,Maryam Siadat,Joop Schoonman,Mater.Sci.Semi.Proc.13(2010)1.
[10]Wei-De Zhang,Wen-Hui Zhang,Xue-Yong Ma,J.Mater.Sci 44(2009)4677-4682.
[11]Shih Yuan Lin,Ying Chung Chen,Chih Ming Wang,Po-Tsung Hsieh,ShunChou Shih,Appl.Surf.Sci.255(2009)3868-3874.
[12]E.Comini,G.Sberveglieri,M.Ferroni,V.Guidi,G.Martinelli,Sens.Actuators B.93(2003)409-414.
[13]V.Nirupama,M.Chandrasekhar,P.Radhika,B.Sreedhar,S.Uthanna,J.Optoelectron.Adv.Mater.11(2009)320-325.
[14]R.S.Patil,M.D.Uplane,P.S.Patil,Int.J.Electrochem.Sci.3(2008)259-265.
[15]Hoa Nguyen,A.Sherif,El-Safty,J.Phys.Chem.C.115(2011)8466-8474.
[16]Mehdi Ranjbar,Azam Iraji zad,Seyyed Mohammad,Mahdavi,Appl.Phys.A.92(2008)627-634.
[17]P.A.Spevack,N.S.Mcintyre,J.Phys.Chem.96(1992)9029-9035.
[18]Kishorkumar V.Khot,Sawanta S.Mali,Rohini R.Kharade,Rahul M.Mane,Pramod S.Patil,Chang Kook Hong,Jin Hyeok Kim,Jaeyeong Heo,Popatrao N.Bhosale,J.Mater.Sci.:Mater.Electron 25(2014)5606-5617.
[19]K.V.Khot,S.S.Mali,R.M.Mane,P.S.Patil,Chang Kook Hong,Jin Hyeok Kim,Jaeyeong Heo,Popatrao N.Bhosale,J.Mater.Sci.:Mater.Electron 26(2015)6897-6906.
[20]Yung-Sen Lin,Jhen-Yi Lai,Tsung-Hsien Tsai,Pei-Ying Chuang,Yen-Cheng Chen,Thin Solid Films 519(2011)3875-3882.
[21]Sobia Ashraf,Christopher S.Blackman,Geoffrey Hyett,Ivan P.Parkin,J.Mater.Chem.16(2006)3575-3582.
[22]T.Siciliano,A.Tepore,E.Filippo,G.Micocci,M.Tepore,Mater.Chem.Phys.114(2009)687-691.
[23]Dongmei Ban,Ningsheng Xu,Shaozhi Deng,Jun Chen,Juncong She,J.Mater.Sci.Technol.26(2010)584-588.
[24]Zu Rong Dai,Zheng Wei Pan,Zhong L.Wang,Adv.Funct.Mater.13(2003)9-24.
[25]I.B.Troitskaia,T.A.Gavrilova,S.A.Gromilov,D.V.Sheglov,V.V.Atuchin,R.S.Vemuri,C.V.Ramana,Mater.Sci.Eng.B.174(2010)159-163.
[26]V.Nirupama,K.R.Gunasekhar,B.Sreedhar,S.Uthanna,Curr.Appl.Phys.10(2010)272-278.
[27]S.Subbarayudu,V.Madhavi,S.Uthanna,Adv.Mater.Lett.4(2013)637-642.
[28]S.H.Mohamed,O.Kappertz,J.M.Ngaruiya,T.P.Leervad Pedersen,R.Drese,M.Wuttig,Thin Solid Films 429(2003)135-143.
[29]Se Hee Lee,Maeng Je Seong,C.Edwin Tracy,Angelo Mascarenhas,J.Roland Pitts,Satyen K.Deb,Solid State Ionics 147(2002)129-133.
[30]N.Desikan,L.Huang,S.T.Oyama,J.Phys.Chem.95(1991)10050-10056.
[31]Perry A.Spevack,N.S.Mcintyre,J.Phys.Chem.97(1993)11020-11030.
[32]David Yao,Jian Zhen Ou,Kay Latham,Serge Zhuiykov,Anthony Peter O’Mullane,Kourosh Kalantar-zadeh,Cryst.Growth Des 12(2012)1865-1870.
[33]Jian Zhen Ou,Jos L Campbell,David Yao,Wojtek Wlodarski,Kourosh Kalantar-Zadeh,J.Phys.Chem.C.115(2011)10757-10763.
[34]O.Goiz,F.Chávez,C.Felipe,N.Morales,R.Pena Sierra,Mater.Sci.Eng.B.174(2010)174-176.
[35]K.P.S.S.Hembram,Rajesh Thomas,G.Mohan Rao,Appl.Surf.Sci.256(2009)419-422.
[36]R.Senthilkumar,T.Mahalingam,G.Ravi,Appl.Surf.Sci.362(2016)102-108.
[37]Chao-Sheng Hsu,Chih-Chieh Chan,Hung-Tai Huang,Chia-Hsiang Peng,Wen-Chia Hsu,Thin Solid Films 516(2008)4839-4844.
[38]C.V.Ramana,V.V.Atuchin,V.G.Kesler,V.A.Kochubey,L.D.Pokrovsky,V.Shutthanandan,U.Becker,R.C.Ewing,Appl.Surf.Sci.15(2007)5368-5374.
[39]H.M.Farveez Ahmed,Noor Shahina Begum,Bull.Mater.Sci.36(2013)45-49.
[40]Todd M.Mc Evoy,Keith J.Stevenson,Langmuir 192(2003)4316-4326.
[41]Richard L.Smith,Gregory S.Rohrer,J.Catal.163(1996)12-17.
[42]R.Sivakumar,V.Vijayan,V.Ganesan,M.Jayachandran,C.Sanjeeviraja,Smart Mater.Struct.14(2005)1204-1209.
[43]Hyeyoung Kim,Karuppanan Senthil,Kijung Yong,Chem.Phys 120(2010)452-455.
[44]Popatrao N.Bhosale,et al.,New J.Chem.38(2014)5964-5974.
[45]Wenzhang Li,Jie Li,Xuan Wang,Jun Ma,Qiyuan Chen,Int.J.Hydrogen Energy35(2010)13137-13145.
[46]W.Li,J.Li,X.Wang,S.Luo,J.Xiao,Q.Chen,Electrochim.Acta 56(2010)620-625.
[47]C.Das,I.Paramasivam,N.Liu,P.Schmuki,Electrochim.Acta 56(2011)10557-10561.
[48]Todd M.Mcevoy,Keith J.Stevenson,Langmuir 19(2003)4316-4326.
[49]K.R Murali,K.Srinivasan,D.C.Trivedi,Mater.Lett.59(2005)15-18.
[50]C.Soci,A.Zhang,B.Xiang,S.A.Aplin Dayeh,J.Park,X.Y.Bao,Y.H.Lo,D.Wang,Nano Lett 7(2007)1003-1009.
[51]B.Alotaibi,M.Harati,S.Fan,S.Zhao,H.P.T.Nguyen,M.G.Kibria,Z.Mi,Nanotechnology 24(2013)175401-175405.
[52]Toshiaki Mori,Akira Miyamoto,Naoki Takahashi,Masato Fukagaya,Tadashi Hattori,Yuichi Murakami,J.Phys.Chem.90(1986)5197-5201.
[53]P.Ivanov,J.Hubalek,K.Malysz,J.Prasek,X.Vilanova,E.Llobet,X.Correig,Sens.Actuators B 100(2004)221-227.
[54]C.Ruan,M.Paulose,O.K.Varghesev,C.A.Grimes,Sol.Energy Mater.Sol.Cells.90(2006)1283-1295.