摘要
针对半导体激光器电磁波的振幅较大,激光器中能量的透射率较高,导致半导体激光器的能量损耗越大,对半导体激光器功率有一定的影响。本文提出腔面镀膜对半导体激光器功率影响分析方法,通过对激光产生过程中粒子转化过程进行优化,降低电磁波的振幅,并对腔面未镀膜时半导体激光器的能量反射率和透射率进行计算,从而确定未镀膜半导体激光器的输出功率,然后根据激光器的电磁波电场和磁场的强度,确定镀膜后腔面的反射因子和透射因子,减少能量损耗,计算出镀膜后激光器的反射率和透射率,得出镀膜后激光器的功率,以镀膜前后半导体激光器的功率值为依据,实现高功率半导体激光器腔面镀膜对功率影响分析。实验结果表明,所提方法能够对镀膜前后功率变化进行准确分析,为半导体激光器腔面镀膜提供理论依据。
In view of the large amplitude of the electromagnetic wave in the semiconductor laser,the higher energy transmission in the laser is,the higher the energy loss of the semiconductor laser,and there is the influence on the power of the semiconductor laser. This paper proposes a method for analyzing the influence of cavity coating of semiconductor laser power. Reduce the amplitude of electromagnetic wave through optimizing particle transformation process in the laser forming. And calculate the energy reflectivity and transmissivity of semiconductor laser without coating to determine the output power. Then determine the reflection factor and the transmission factor of the coated cavity according to the intensities of electromagnetic wave field and magnetic field of the laser. Reduce energy consumption,calculate the reflectance and transmittance after laser coating to get the power. Realize power influences analysis of high power semiconductor laser cavity coating based on the values of semiconductor laser before and after costing. The experimental results show that the proposed method can accurately analyze the power change before and after coating,and provide theoretical basis for semiconductor laser cavity coating.
引文
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