电化学沉积金锡合金及其性能研究
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摘要
以柠檬酸金钾和氯化亚锡为主要原材料,配制Au~+及Sn~(2+)浓度分别为8 g/L和10 g/L的溶液,在不同电流密度下通过电化学沉积获得金锡合金镀层。通过X-射线衍射(XRD)、扫描电子显微镜(SEM)、微区元素成分分析(EDS)及差示扫描量热分析(DSC)等手段对镀层的物相、微观形貌、金含量及熔融性能进行了系统研究。结果表明,电流密度0.030～0.045 mA/mm~2为最佳电流密度范围,可获得熔融温度约280℃、焊接性能良好的金锡合金镀层。
A kind of solution with Au~+ and Sn~(2+) 8 g/L and 10 g/L are prepared by using gold potassium citrate and tin chloride as the main raw materials. Gold and tin alloy depositions are obtained under different current densities.The phase composition, microscopic structure, gold content and melting properties of depositions have been investigated systematically by XRD diffraction, scanning electron microscope(SEM), energy dispersive spectroscopy(EDS) and differential scanning calorimetry(DSC). The results show that the best current density range is 0.030～0.045 m A/mm~2, gold and tin alloy depositions with good welding property and melting temperature about 280℃ can be obtained.
A kind of solution with Au~+ and Sn~(2+) 8 g/L and 10 g/L are prepared by using gold potassium citrate and tin chloride as the main raw materials. Gold and tin alloy depositions are obtained under different current densities.The phase composition, microscopic structure, gold content and melting properties of depositions have been investigated systematically by XRD diffraction, scanning electron microscope(SEM), energy dispersive spectroscopy(EDS) and differential scanning calorimetry(DSC). The results show that the best current density range is 0.030～0.045 m A/mm~2, gold and tin alloy depositions with good welding property and melting temperature about 280℃ can be obtained.
引文
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[3]Zeng K,Tu K N.Six cases of reliability study of Pb-free solder joints in electronic packaging technology[J].Materials Science&Engineering R:Reports,2002,38(2):55-105.
[4]Massalski T B.Binary alloy phase diagrams[M].Ohio:ASM International(Materials Park),1990:433.
[5]Takseng T,Sun D,Koay H K,et al.Characterization of Au-Sn eutectic die attach process for optoelectronics device[C]//International Symposium on Electronics Materials&Packaging,2006.
[6]Elger,Hutter,Oppermann,et al.Development of an assembly process and reliability investigations for flip-chip LEDs using the AuSn soldering[J].Microsystem Technologies,2002,7(5-6):239-243.
[7]Nishiguchi M,Goto N,Mishizawa H.Highly reliable Au-Sn bonding with background GaAs LSI chips[J].IEEE Transactions on Components Hybrids&Manufacturing Technology,1991,14(3):523-528.
[8]Matijasevic G S,Lee C C.A reliability study of Au-Sn eutectic binding with Ga-As dice[C].International Reliability Physics Symposium.IEEE,1989.
[9]Wang Q,Choa S H,Kim W,et al.Application of Au-Sn eutectic bonding in hermetic radio-frequency microelectromechanical system wafer level packaging[J].Journal of Electronic Materials,2006,35(3):425-432.
[10]Djurfors B,Ivey D G.Pulsed electrodeposition of the eutectic Au/Sn solder for optoelectronic packaging[J].Journal of Electronic Materials,2001,30(9):1249-1254.
[11]Djurfors B,Ivey D G.Microstructural characterization of pulsed electrodeposited Au/Sn alloy thin films[J].Materials Science&Engineering B(Solid-State Materials for,Advanced Technology),2002,90(3):309-320.