基于RTD和HEMT的D触发器设计
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摘要
共振隧穿二极管(RTD)作为一种新的量子器件和纳米电子器件,具有负内阻、电路功耗低、工作频率高、双稳态和自锁等特性,可突破CMOS工艺尺寸的物理极限,在数字集成电路领域有更为广阔的发展空间.针对RTD的特性,采用3个RTD串联的单双稳态转换逻辑单元(MOBILE)和类SR锁存器,设计了基于RTD和HEMT(高电子迁移率晶体管)的D触发器.较于其他研究的D触发器,该D触发器能有效降低电路的器件数量和复杂度,且能抗S、R信号的延时差异干扰,具有更稳健的输出.
The resonant tunneling diode(RTD)as a new quantum device and nano-electronic device,has many attributes,including negative resistance,low power consumption,high frequency,bistability and self-latching.It can be used to break through the physical limits of CMOS process size,and also has a broader space for the development of digital integrated circuit.According to the characteristics of the RTD,a D flip-flop is designed based on RTD and HEMT(high electron mobility transistor).The D flip-flop uses the monostable-bistable transition logic element(MOBILE)with three RTDs in series and the similar SR-latch.Compared with the D flip-flop in other studies,the designed D flip-flop can effectively reduce the device number and complexity of the circuit.What is more,it also can eliminate the interference of delay difference between the signals of S and R with a more robust output.
The resonant tunneling diode(RTD)as a new quantum device and nano-electronic device,has many attributes,including negative resistance,low power consumption,high frequency,bistability and self-latching.It can be used to break through the physical limits of CMOS process size,and also has a broader space for the development of digital integrated circuit.According to the characteristics of the RTD,a D flip-flop is designed based on RTD and HEMT(high electron mobility transistor).The D flip-flop uses the monostable-bistable transition logic element(MOBILE)with three RTDs in series and the similar SR-latch.Compared with the D flip-flop in other studies,the designed D flip-flop can effectively reduce the device number and complexity of the circuit.What is more,it also can eliminate the interference of delay difference between the signals of S and R with a more robust output.
引文
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[15]SCHULMAN J N,SANTOS H J D L,CHOW D H.Physics-based RTD current-voltage equation[J].IEEE Electron Device Letters,1996,17(5):220-222.
[2]GHALLAB Y H,ISMAIL Y.CMOS based lab-on-achip:Applications,challenges and future trends[J].IEEE Circuits&Systems Magazine,2014,14(2):27-47.
[3]NARENDRA S G.Challenges and design choices in nanoscale CMOS[J].ACM Journal on Emerging Technologies in Computing Systems,2005,1(1):7-49.
[4]MAZUMDER P,KULKARNI S,BHATTACHARYA M.Digital circuit applications of resonant tunneling devices[J].Proceedings of the IEEE,1998,86(4):664-686.
[5]ZHENG Y,HUANG C.Complete logic functionality of reconfigurable RTD circuit elements[J].IEEE Transactions on Nanotechnology,2009,8(5):631-642.
[6]AVEDILLO M J,QUINTANA J M,PETTENGHI H,et al.Logic models supporting the design of MOBILE-based RTD circuits[C]//Proceedings of the 16th International Conference on Application-Specific Systems.Samos:IEEE,2005:254-259.
[7]GAN K J,TSAI C S,HSIEN C W,et al.Design of monostable–bistable transition logic element using the BiCMOS-based negative differential resistance circuit[J].Analog Integrated Circuits&Signal Processing,2011,68(3):379-385.
[8]POPP M,THIESSEN T,ZORN C,et al.On the functionality of RTD MOBILE circuits-A geometric approach[C]//IEEE International Symposium on Circuits&Systems.Melbourne:IEEE ISCAS,2014:1251-1254.
[9]CHEN K J,MAEZAWA K,YAMAMOTO M.InPbased high performance monostable-bistable transition logic elements(MOBILEs)using integrated multipleinput resonant-tunneling devices[J].IEEE Electron Device Letters,1996,17(3):127-129.
[10]DIXIT N K,KUMARI V.A XOR threshold logic implementation through resonant tunneling diode[J].International Journal of Vlsi Design&Communication Systems,2012,3(5):137-146.
[11]YAO M Q,YANG K,XU C Y,et al.Design of a novel RTD-based three-variable universal logic gate[J].Frontiers of Information Technology&Electronic Engineering,2015,16(8):694-699.
[12]ZHENG Y,HUANG C.Reconfigurable RTD-based circuit elements of complete logic functionality[C]//Asia&South Pacific Design Automation Conference.Virginia Tech:IEEE Computer Society Press,2008:71-76.
[13]CHO J,LI Z,BOZORG G E,et al.Improved thermal interfaces of GaN-diamond composite substrates for HEMT applications[J].IEEE Transactions on Components Packaging&Manufacturing Technology,2013,3(1):79-85.
[14]ZHANG H,MAZUMDER P,YANG K.Resonant tunneling diode based QMOS edge triggered flip-flop design[C]//International Symposium on Circuits and Systems.Vancouver:IEEE,2004,3(3):705-708.
[15]SCHULMAN J N,SANTOS H J D L,CHOW D H.Physics-based RTD current-voltage equation[J].IEEE Electron Device Letters,1996,17(5):220-222.