Low-temperature synthesis of SiC nanowires with Ni catalyst
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摘要
SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.
SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.
SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.
引文
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[5] Choi HJ, Seong HK, Lee JC, Sung YM. Growth and modulation of silicon carbide nanowires. J Cryst Growth. 2004;269(2-4):472.
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[7] Hao YJ, Jin GQ, Han XD, Guo XY. Synthesis and characterization of bamboo-like SiC nanofibers. Mater Lett. 2006;60(11):1334.
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[10] Zhang XD, Huang XX, Wen GW, Geng X, Zhu JD, Zhang T,Bai HW. Novel SiOC nanocomposites for high-yield preparation of ultra-large-scale SiC nanowires. Nanotechnology. 2010;21(38):385601.
[11] Wen GW, Li F, Han ZX, Bai HW. Growth of beta-SiC nanowires from sibonc nano powder compacts. Rare Metal Mater Eng. 2008;37(3):561.
[12] Ju ZC, Ma XC, Fan N, Li P, Xu LQ, Qian YT. High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route. Mater Lett. 2007;61(18):3913.
[13] Hao YJ, Wagner JB, Su DS, Jin GQ, Guo XY. Beaded silicon carbide nanochains via carbothermal reduction of carbonaceous silica xerogel. Nanotechnology. 2006; 17(12):2870.
[14] Wen GW, Li F, Han ZX, Bai HW. Growth of beta-SiC nanowires from sibonc nano powder compacts. Rare Metal Mater Eng. 2008;37(3):561.
[15] Wagner RS, Ellis WC. Vapor-liquid-solid mechanism of single crystal growth. Appl Phys Lett. 1964;21(4):89.
[16] Xing YJ, Xi ZH, Yu DP, Hang QL, Yan HF, Feng SQ, Xue ZQ.Heating process of solid-liquid-solid(SLS)growth of silicon nanowires. J Electron Inf Technol. 2003;25(2):259.
[2] Dai H, Wong EW, Lu YZ, Fan S, Lieber CM. Synthesis and characterization of carbide nanorods. Nature. 1995;6534(375):769.
[3] Wong EW, Sheehan PE, Lieber CM. Nanobeam mechanics:elasticity, strength, and toughness of nanorods and nanotubes.Science. 1997;277(5334):1971.
[4] Zhou XT, Lai HL, Peng HY, Au FCK, Liao LS, Wang N, Bello I, Lee CS, Lee ST. Thin beta-SiC nanorods and their field emission properties. Chem Phys Lett. 2000;318(1-3):58.
[5] Choi HJ, Seong HK, Lee JC, Sung YM. Growth and modulation of silicon carbide nanowires. J Cryst Growth. 2004;269(2-4):472.
[6] Wang ZL, Dai ZR, Gao RP, Bai ZG, Gole JL. Side-by-side silicon carbide-silica biaxial nano wires:synthesis, structure, and mechanical properties. Appl Phys Lett. 2000;77(21):3349.
[7] Hao YJ, Jin GQ, Han XD, Guo XY. Synthesis and characterization of bamboo-like SiC nanofibers. Mater Lett. 2006;60(11):1334.
[8] Shi WS, Zheng YF, Peng HY, Wang N, Lee CS, Lee ST. Laser ablation synthesis and optical characterization of silicon carbide nano wires. J Am Ceram Soc. 2000;83(12):3228.
[9] Li YB, Xie SS, Zou XP, Tang DS, Liu ZQ, Zhou WY, Wang G.Large-scale synthesis ofβ-SiC nanorods in the arc-discharge.J Cryst Growth. 2001;223(1-2):125.
[10] Zhang XD, Huang XX, Wen GW, Geng X, Zhu JD, Zhang T,Bai HW. Novel SiOC nanocomposites for high-yield preparation of ultra-large-scale SiC nanowires. Nanotechnology. 2010;21(38):385601.
[11] Wen GW, Li F, Han ZX, Bai HW. Growth of beta-SiC nanowires from sibonc nano powder compacts. Rare Metal Mater Eng. 2008;37(3):561.
[12] Ju ZC, Ma XC, Fan N, Li P, Xu LQ, Qian YT. High-yield synthesis of single-crystalline 3C-SiC nanowires by a facile autoclave route. Mater Lett. 2007;61(18):3913.
[13] Hao YJ, Wagner JB, Su DS, Jin GQ, Guo XY. Beaded silicon carbide nanochains via carbothermal reduction of carbonaceous silica xerogel. Nanotechnology. 2006; 17(12):2870.
[14] Wen GW, Li F, Han ZX, Bai HW. Growth of beta-SiC nanowires from sibonc nano powder compacts. Rare Metal Mater Eng. 2008;37(3):561.
[15] Wagner RS, Ellis WC. Vapor-liquid-solid mechanism of single crystal growth. Appl Phys Lett. 1964;21(4):89.
[16] Xing YJ, Xi ZH, Yu DP, Hang QL, Yan HF, Feng SQ, Xue ZQ.Heating process of solid-liquid-solid(SLS)growth of silicon nanowires. J Electron Inf Technol. 2003;25(2):259.