摘要
利用超高真空磁控共溅沉积系统在Si(100)衬底上溅射Ge组分渐变的Si_(1-x)Ge_x缓冲层,并在其上制备Ge薄膜,采用快速热退火(RTA)对Ge薄膜进行退火处理。采用X薄膜表征。结果表明:使用该方法制备的Ge800℃,110 s的退火条件下随衬底温度的升高,Ge500℃时磁控溅射沉积的Ge薄膜,经800℃,110 s尺寸达到41 nm,为后续替代锗单晶作为多结电池衬底材料打下良好的基础。
Ge thin film with graded Si_(1-x)Ge_x buffer layers were prepared by dual targets magnetron sputtering on Si(100)substrate,The Ge film was annealed with rapid thermal annealing(RTA)equipment. Ge thin film was characterized using X-ray diffraction(XRD),Raman spectrometer,scanning electron microscope(SEM). The results show that the interface of epitaxial layers is clear;deposition of germanium film critical crystallization temperature is about 375 ℃;Under the annealing condition of 800 ℃,110 seconds,germanium films present Ge(220)preferred orientation growth when substrate temperature is 300 ℃,germanium films present Ge(111)preferred orientation growth when substrate temperature is 500 ℃,analyzes the reasons for those results and determine the best process parameters is 500 ℃substrate temperature,800 ℃annealing temperature and 110 seconds annealing time,under this condition germanium film Ge(111)orientation reached 74%,and its grain size reached 41 nm for subsequent instead of single crystal germanium as multi-junction concentrated battery substrate material provides a effective foundation.
引文
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