深紫外光刻机的Lens flare监控优化
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摘要
集成电路深紫外光刻工艺过程中,硅片表面光阻产生的有机挥发物会结晶在深紫外光刻机里的光学镜头上,随着时间的积累,结晶物变多,会使透射过此位置的部分光产生一定的散射,进而影响曝光CD,这一现象称为lens flare。本文对深紫外光刻机lens flare的监控方式进行研究分析,发现产品光罩与特殊的监控M光罩在lens flare不同程度下的能量表现差异。针对这种差异,进行分析讨论,最终利用某一产品光罩替代M光罩进行监控方式的优化,优化后的产品光罩最大能量波动幅度缩小至优化前的1/3,从而保证光刻机生产的产品质量。
In the process of integrated circuit deep ultraviolet photolithography,the organic volatiles produced by the photoresist on the silicon wafer's surface will crystallize on the optical lenses of the deep ultraviolet photolithography machine. With the accumulation of time,the accumulation of the crystals will make some light transmitted over this position scatter,and then affect the exposure CD. This phenomenon is called the lens flare. In this paper,the monitoring method of lens flare for deep ultraviolet photolithography machine is studied and analyzed,and the difference of energy performance between the product masks and the special monitoring M mask at different degrees of lens flare is found. In view of this difference,this paper analyzes and discusses the optimization of the monitoring method by replacing the M mask with a product mask. The maximum energy fluctuation of the product mask is reduced to the 1/3 after optimization,thus ensuring the quality of the product produced by the photolithography machine.
In the process of integrated circuit deep ultraviolet photolithography,the organic volatiles produced by the photoresist on the silicon wafer's surface will crystallize on the optical lenses of the deep ultraviolet photolithography machine. With the accumulation of time,the accumulation of the crystals will make some light transmitted over this position scatter,and then affect the exposure CD. This phenomenon is called the lens flare. In this paper,the monitoring method of lens flare for deep ultraviolet photolithography machine is studied and analyzed,and the difference of energy performance between the product masks and the special monitoring M mask at different degrees of lens flare is found. In view of this difference,this paper analyzes and discusses the optimization of the monitoring method by replacing the M mask with a product mask. The maximum energy fluctuation of the product mask is reduced to the 1/3 after optimization,thus ensuring the quality of the product produced by the photolithography machine.
引文
[1]New Challenges for Integrated Circuit Solutions.Wireless Personal Communications:Joern Soerensen,Palle Birk and Zoran Zvonar,2001,Volume 17,291-302.
[2]Structural optimization complexity:what has Moore’s law done for us.Structural and Multidisciplinary Optimization:S.Venkataraman and R.T.Haftka,2004,Volume 28,375-387.
[3]Nikon corporation.
[4]Application of optical proximity correction technology.Science in China Series F:Information Sciences:Cai Yi Ci,Zhou Qiang,Hong Xian Long,Shi Rui and Wang Yang,2008,Volume 51,213-224.
[2]Structural optimization complexity:what has Moore’s law done for us.Structural and Multidisciplinary Optimization:S.Venkataraman and R.T.Haftka,2004,Volume 28,375-387.
[3]Nikon corporation.
[4]Application of optical proximity correction technology.Science in China Series F:Information Sciences:Cai Yi Ci,Zhou Qiang,Hong Xian Long,Shi Rui and Wang Yang,2008,Volume 51,213-224.