AlGaN/GaN异质结肖特基二极管研究进展
|
摘要
氮化镓GaN(gallium nitride)作为第三代半导体材料的代表之一,具有临界击穿电场强、耐高温和饱和电子漂移速度高等优点,在电力电子领域有广泛的应用前景。GaN基器件具有击穿电压高、开关频率高、工作结温高、导通电阻低等优点,可以应用在新型高效、大功率的电力电子系统。总结了AlGaN/GaN异质结肖特基二极管SBD(Schottky barrier diode)目前面临的问题以及目前AlGaN/GaN异质结SBD结构、工作原理及结构优化的研究进展。重点从AlGaN/GaN异质结SBD的肖特基新结构和边缘终端结构等角度,介绍了各种优化SBD性能的方法。最后,对器件的未来发展进行了展望。
As a representative of the third-generation semiconductor material, gallium nitride(GaN) has a variety of advantages, e.g., high critical electrical field, resistance to high temperature, and high electron saturation velocity.Therefore, it has attracted a lot of interests in the field of power electronics. GaN-based devices can be applied to novel high-efficiency and high-power power electronic systems, as they offer high breakdown voltage, fast switching speed,satisfying thermal properties, and low turn-on resistance, etc. In this paper, the challenges of AlGaN/GaN heterojunction Schottky barrier diode(SBD), as well as its structure, working principle and structure optimization, are summarized. Various methods which can be used to optimize the performance of SBD are introduced, especially from aspects such as novel Schottky structures and edge termination structures. Finally, the development of material and devices in the future is forecasted.
As a representative of the third-generation semiconductor material, gallium nitride(GaN) has a variety of advantages, e.g., high critical electrical field, resistance to high temperature, and high electron saturation velocity.Therefore, it has attracted a lot of interests in the field of power electronics. GaN-based devices can be applied to novel high-efficiency and high-power power electronic systems, as they offer high breakdown voltage, fast switching speed,satisfying thermal properties, and low turn-on resistance, etc. In this paper, the challenges of AlGaN/GaN heterojunction Schottky barrier diode(SBD), as well as its structure, working principle and structure optimization, are summarized. Various methods which can be used to optimize the performance of SBD are introduced, especially from aspects such as novel Schottky structures and edge termination structures. Finally, the development of material and devices in the future is forecasted.
引文
[1]Mishra U K,Parikh P,Wu Yifeng.AlGaN/GaN HEMTsAn overview of device operation and applications[J].Proceedings of the IEEE,2002,90(6):1022-1031.
[2]Khan M A,Bhattarai A,Kuznia J N,et al.High electron mobility transistor based on a GaN/AlxGa1-xN heterojunction[J].Applied Physics Letters,1993,63(9):1214-1215.
[3]Zhang Naiqian,Moran B,DenBaars S P,et al.Kilovolt AlGaN/GaN HEMTs as switching devices[J].Physica Status Solidi(a),2001,188(1):213-217.
[4]De Jaeger B,Van Hove M,Wellekens D,et al.Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200mm Si substrates[C].2012 24th International Symposium on Power Semiconductor Devices and Ics.Bruges,Belgium,2012:49-52.
[5]Lenci S,De Jaeger B,Carbonell L,et al.Au-free AlGaN/GaNpower diode on 8-in Si substrate with gated edge termination[J].IEEE Electron Device Letters,2013,34(8):1035-1037.
[6]Baliga B J.Gallium nitride devices for power electronic applications[J].Semiconductor Science and Technology,2013,28(7):15.
[7]Visalli D,Van Hove M,Derluyn J,et al.Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs[J].IEEE Transactions on Electron Devices,2010,57(12):3333-3339.
[8]Bahat-Treidel E,Hilt O,Zhytnytska R,et al.Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking[J].IEEE Electron Device Letters,2012,33(3):357-359.
[9]Zhang Tao,Zhang Jincheng,Zhou Hong,et al.A 1.9-kV/2.61-m·cm2lateral GaN schottky barrier diode on silicon substrate with tungsten anode and low turn-on voltage of0.35 V[J].IEEE Electron Device Letters,2018,39(10):1548-1551.
[10]Zhang Anbang,Zhou Qi,Yang Chao,et al.Novel AlGaN/GaN SBDs with nanoscale multi-channel for gradient 2DEG modulation[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,USA,2018:204-207.
[11]Chen Wanjun,Wong K Y,Chen K J.Monolithic integration of lateral field-effect rectifier with normally-off HEMTfor GaN-on-Si switch-mode power supply converters[C]//2008 IEEE International Electron Devices Meeting.San Francisco,CA,USA,2008:1-4.
[12]Lee J G,Park B R,Cho C H,et al.Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode[J].IEEEElectron Device Letters,2013,34(2):214-216.
[13]Zhou Qi,Jin Yang,Mou Jingyu,et al.Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-gated hybrid anode[C]//2015 IEEE 27th International Symposium on Power Semiconductor Devices&IC’s(ISP-SD).Hong Kong,China,2015:369-372.
[14]Kang Xuanwu,Wang Xinhua,Huang Sen,et al.Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,US-A,2018:280-283.
[15]Ishida H,Shibata D,Matsuo H,et al.GaN-based natural super junction diodes with multi-channel structures[C]//2008 IEEE International Electron Devices Meeting.San Francisco,CA,USA,2008:1-4
[16]Shibata D,Kaibara K,Murata T,et al.GaN-based multijunction diode with low reverse leakage current using P-type barrier controlling layer[J].2011 International Electron Devices Meeting.Washington,DC,USA,2011(11):26.2.1-26.2.4.
[17]Ma Jun,Matioli E.High-voltage and low-leakage AlGaN/GaN tri-anode schottky diodes with integrated tri-gate transistors[J].IEEE Electron Device Letters,2017,38(1):83-86.
[18]Ma Jun,Kampitsis G,Xiang Peng,et al.Multi-channel trigate GaN power schottky diodes with low on-resistance[J].IEEE Electron Device Letters,2019,40(2):275-278.
[19]Yoshida S,Ikeda N,Li Jiang,et al.High power AlGaN/GaN Schottky barrier diode with 1000 V operation[J].MRSOnline Proceeding Library Archive,2011,892:1-6.
[20]Zhu Mingda,Song Bo,Qi Meng,et al.1.9-kV AlGaN/GaNlateral schottky barrier diodes on silicon[J].IEEE Electron Device Letters,2015,36(4):375-377.
[21]Biscarrat J,Gwoziecki R,Baines Y,et al.Performance enhancement of CMOS compatible 600 V rated AlGaN/GaNSchottky diodes on 200 mm silicon wafers[J].2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,USA,2018:200-203.
[2]Khan M A,Bhattarai A,Kuznia J N,et al.High electron mobility transistor based on a GaN/AlxGa1-xN heterojunction[J].Applied Physics Letters,1993,63(9):1214-1215.
[3]Zhang Naiqian,Moran B,DenBaars S P,et al.Kilovolt AlGaN/GaN HEMTs as switching devices[J].Physica Status Solidi(a),2001,188(1):213-217.
[4]De Jaeger B,Van Hove M,Wellekens D,et al.Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200mm Si substrates[C].2012 24th International Symposium on Power Semiconductor Devices and Ics.Bruges,Belgium,2012:49-52.
[5]Lenci S,De Jaeger B,Carbonell L,et al.Au-free AlGaN/GaNpower diode on 8-in Si substrate with gated edge termination[J].IEEE Electron Device Letters,2013,34(8):1035-1037.
[6]Baliga B J.Gallium nitride devices for power electronic applications[J].Semiconductor Science and Technology,2013,28(7):15.
[7]Visalli D,Van Hove M,Derluyn J,et al.Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs[J].IEEE Transactions on Electron Devices,2010,57(12):3333-3339.
[8]Bahat-Treidel E,Hilt O,Zhytnytska R,et al.Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking[J].IEEE Electron Device Letters,2012,33(3):357-359.
[9]Zhang Tao,Zhang Jincheng,Zhou Hong,et al.A 1.9-kV/2.61-m·cm2lateral GaN schottky barrier diode on silicon substrate with tungsten anode and low turn-on voltage of0.35 V[J].IEEE Electron Device Letters,2018,39(10):1548-1551.
[10]Zhang Anbang,Zhou Qi,Yang Chao,et al.Novel AlGaN/GaN SBDs with nanoscale multi-channel for gradient 2DEG modulation[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,USA,2018:204-207.
[11]Chen Wanjun,Wong K Y,Chen K J.Monolithic integration of lateral field-effect rectifier with normally-off HEMTfor GaN-on-Si switch-mode power supply converters[C]//2008 IEEE International Electron Devices Meeting.San Francisco,CA,USA,2008:1-4.
[12]Lee J G,Park B R,Cho C H,et al.Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode[J].IEEEElectron Device Letters,2013,34(2):214-216.
[13]Zhou Qi,Jin Yang,Mou Jingyu,et al.Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-gated hybrid anode[C]//2015 IEEE 27th International Symposium on Power Semiconductor Devices&IC’s(ISP-SD).Hong Kong,China,2015:369-372.
[14]Kang Xuanwu,Wang Xinhua,Huang Sen,et al.Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking[C]//2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,US-A,2018:280-283.
[15]Ishida H,Shibata D,Matsuo H,et al.GaN-based natural super junction diodes with multi-channel structures[C]//2008 IEEE International Electron Devices Meeting.San Francisco,CA,USA,2008:1-4
[16]Shibata D,Kaibara K,Murata T,et al.GaN-based multijunction diode with low reverse leakage current using P-type barrier controlling layer[J].2011 International Electron Devices Meeting.Washington,DC,USA,2011(11):26.2.1-26.2.4.
[17]Ma Jun,Matioli E.High-voltage and low-leakage AlGaN/GaN tri-anode schottky diodes with integrated tri-gate transistors[J].IEEE Electron Device Letters,2017,38(1):83-86.
[18]Ma Jun,Kampitsis G,Xiang Peng,et al.Multi-channel trigate GaN power schottky diodes with low on-resistance[J].IEEE Electron Device Letters,2019,40(2):275-278.
[19]Yoshida S,Ikeda N,Li Jiang,et al.High power AlGaN/GaN Schottky barrier diode with 1000 V operation[J].MRSOnline Proceeding Library Archive,2011,892:1-6.
[20]Zhu Mingda,Song Bo,Qi Meng,et al.1.9-kV AlGaN/GaNlateral schottky barrier diodes on silicon[J].IEEE Electron Device Letters,2015,36(4):375-377.
[21]Biscarrat J,Gwoziecki R,Baines Y,et al.Performance enhancement of CMOS compatible 600 V rated AlGaN/GaNSchottky diodes on 200 mm silicon wafers[J].2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs(ISPSD).Chicago,IL,USA,2018:200-203.