一种用于1.25Gbps光接收机的跨阻放大器设计
|
摘要
给出了一种用于1.25 Gbps光接收机的跨阻放大器(TIA,Transfer Impedance Amplifier)设计。该TIA采用电阻并联反馈形式。为保证TIA在PVT (Process, Voltage, Temperature)变化范围较大时较一致的带宽和增益,设计了自适应带宽控制电路来稳定带宽。为满足较宽的动态范围,通过自动增益控制电路(AGC)控制增益。该TIA采用0.18μm CMOS工艺进行设计,实测结果表明,在输入端光电二极管电容CPD为0.7 pF时,TIA的增益为12.0 kΩ,带宽达0.96 GHz,总噪声电流为104 nA,满足1.25 Gbps光接收机的指标要求。
A transfer impedance amplifier(TIA) for 1.25 Gbps is proposed in the paper.Resistive shunt feedback architecture is used in TIA design.Adaptive bandwidth control circuit is used to stabilize bandwidth in PVT(Process,Voltage,and Temperature) conditions.Automatic gain control is also designed for higher dynamic range.The proposed TIA is designed and simulated based on 0.18 μm CMOS process.When the capacitance of photodiode is 0.7 pF,simulation results of the proposed TIA show gain of 12.0 kΩ,bandwidth of 0.96 GHz,total noise current of 104 nA.The proposed TIA meets the requirements of 1.25 Gbps optical receiver.
A transfer impedance amplifier(TIA) for 1.25 Gbps is proposed in the paper.Resistive shunt feedback architecture is used in TIA design.Adaptive bandwidth control circuit is used to stabilize bandwidth in PVT(Process,Voltage,and Temperature) conditions.Automatic gain control is also designed for higher dynamic range.The proposed TIA is designed and simulated based on 0.18 μm CMOS process.When the capacitance of photodiode is 0.7 pF,simulation results of the proposed TIA show gain of 12.0 kΩ,bandwidth of 0.96 GHz,total noise current of 104 nA.The proposed TIA meets the requirements of 1.25 Gbps optical receiver.
引文
[1]T K Woodward,A V Krishnamoorthy.1-Gb/s Integrated Optical Detectors and Receivers In Commercial CMOSTechnoligies[J].IEEE Journal of Selected Topics in Quantum Electronics.1999,5(2):146-156.
[2]Kiyoto Takahata,YoshifumiMuramoto,HidekiFukano,et al Ultrafast Monolithic Receiver OEIC Composed of Multimode Waveguide p-i-n Photodiode and HEMTDistributed Amplifier[J].IEEE Journal of Selected Topics in Quantum Electronics,2000,6(1):31-37.
[3]Meyer R G,Blauschild R A.A Wideband Low-noise Monolithic Transimpedance Amplifier[J].IEEE Journal of Solid-State Circuits,Aug.1986,21:530-533.
[4]王昆.2.5 Gbps CMOS光接收机前置放大器设计与仿真[D].西安:西安电子科技大学,2014.
[5]M Nakamura,Y Imai,Y Umeda,Jun Endo,Y Akatsu.1.25-Gb/s burst-mode receiver ICs with quick response for PON systems[J].IEEE Journal of Solid-State Circuits,2005,40(12):2680-2688.
[6]王通.CMOS工艺光接收机前置放大器设计与仿真[D].济南:山东大学,2015.
[7]HaoZheng,RuiMa,Zhangming Zhu.A linear and wide dynamic range transimpedance amplifier with adaptive gain control technique[J].Analog Integrated Circuits and Signal Processing.2016,90(1):217-226.
[8]BehzadRazavi.光通信集成电路设计[M].北京:清华大学出版社,2007.
[2]Kiyoto Takahata,YoshifumiMuramoto,HidekiFukano,et al Ultrafast Monolithic Receiver OEIC Composed of Multimode Waveguide p-i-n Photodiode and HEMTDistributed Amplifier[J].IEEE Journal of Selected Topics in Quantum Electronics,2000,6(1):31-37.
[3]Meyer R G,Blauschild R A.A Wideband Low-noise Monolithic Transimpedance Amplifier[J].IEEE Journal of Solid-State Circuits,Aug.1986,21:530-533.
[4]王昆.2.5 Gbps CMOS光接收机前置放大器设计与仿真[D].西安:西安电子科技大学,2014.
[5]M Nakamura,Y Imai,Y Umeda,Jun Endo,Y Akatsu.1.25-Gb/s burst-mode receiver ICs with quick response for PON systems[J].IEEE Journal of Solid-State Circuits,2005,40(12):2680-2688.
[6]王通.CMOS工艺光接收机前置放大器设计与仿真[D].济南:山东大学,2015.
[7]HaoZheng,RuiMa,Zhangming Zhu.A linear and wide dynamic range transimpedance amplifier with adaptive gain control technique[J].Analog Integrated Circuits and Signal Processing.2016,90(1):217-226.
[8]BehzadRazavi.光通信集成电路设计[M].北京:清华大学出版社,2007.