超高纯锗棒或锭的净杂质浓度检测方法
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  • 英文篇名:Method for Determination of Net Impurity Concentrations in Ultra High Purity Germanium Bars or Ingots
  • 作者:赵青松 ; 牛晓东 ; 黄幸慰 ; 朱刘
  • 英文作者:ZHAO Qing-song;NIU Xiao-dong;HUANG Xing-wei;ZHU Liu;Vital advanced materials Co.,Ltd.;First Materials Co.,Ltd.;RPM Co.,Ltd.;First Rare Materials Co.,Ltd.;Vital Thin Film Materials (Guangdong) Co.,Ltd.;
  • 关键词:超高纯锗 ; 净杂质浓度 ; 检测方法
  • 英文关键词:ultra high purity germanium;;net impurity concentration;;test method
  • 中文刊名:GZHA
  • 英文刊名:Guangzhou Chemical Industry
  • 机构:广东先导先进材料股份有限公司;清远先导材料有限公司;广东先导稀贵金属材料有限公司;广东先导稀材股份有限公司;先导薄膜材料(广东)有限公司;
  • 出版日期:2019-06-08
  • 出版单位:广州化工
  • 年:2019
  • 期:v.47
  • 语种:中文;
  • 页:GZHA201911038
  • 页数:3
  • CN:11
  • ISSN:44-1228/TQ
  • 分类号:116-118
摘要
介绍了一种检测超高纯锗棒或锭的净杂质浓度的新方法,采用直流两探针法,在77 K恒温下进行检测;两探针检测得到等间距电压降U,通过函数关系式计算得到电阻率ρ,再根据函数关系式|N_A-N_D|=1/(ρ×q×μ),计算得到探针笔间的锗棒或锭的平均净杂质浓度|N_A-N_D|。该方法可以检测锗棒或锭的整体杂质浓度,检测结果相对准确,检测效率高,有利于产业化。
        A new method for detecting the net impurity concentration of ultra-high purity germanium bars or ingots was introduced. The equal distance voltage drop U was detected with two probes,the value of the resistivity ρ was calculated with the function relation,and then on the basis of the function relationship |N_A-N_D| = 1/( ρ × q × μ),the average net impurity concentration between two points was calculated. This method could detect the whole impurity concentration of germanium bars or ingots,the detection result was relatively accurate,the detection efficiency was high,and it was also beneficial to industrialization.
引文
[1]刘锋,耿博耘,韩焕鹏.辐射探测器用高纯锗单晶技术研究[J].电子工业专用设备,2012,41(5):27-31.
    [2]国家发展和改革委员会.YS/T 602-2007区熔锗锭电阻率测试方法两探针法[S].北京:中国标准出版社,2008:1-2.
    [3]Hansen W L,Haller E E.High-Purity Germanium Crystal Growing[J].Nuclear Instruments&Methods,1982,94(2):377-380.
    [4]白尔隽.高纯锗多晶材料的制备[J].核技术,1998,21(9):558-561.
    [5]吴绪礼.探测器级锗单晶的制备工艺[J].稀有金属,1985,3:59-65.
    [6]李思渊.锗的区域熔炼[J].兰州大学学报(自然科学版),1962(1):8.

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