基于HfO_2栅介质的Ga_2O_3 MOSFET器件研制
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摘要
采用金属有机化学气相沉积(MOCVD)方法在(010)Fe掺杂半绝缘Ga_2O_3同质衬底上外延得到n型β-Ga_2O_3薄膜材料,材料结构包括400 nm的非故意掺杂Ga_2O_3缓冲层和40 nm的Si掺杂Ga_2O_3沟道层。基于掺杂浓度为2.0×1018cm~(-3)的n型β-Ga_2O_3薄膜材料,采用原子层沉积的25 nm的HfO_2作为栅下绝缘介质层,研制出Ga_2O_3金属氧化物半导体场效应晶体管(MOSFET)。器件展示出良好的电学特性,在栅偏压为8 V时,漏源饱和电流密度达到42 m A/mm,器件的峰值跨导约为3.8 m S/mm,漏源电流开关比达到108。此外,器件的三端关态击穿电压为113 V。采用场板结构并结合n型Ga_2O_3沟道层结构优化设计能进一步提升器件饱和电流和击穿电压等电学特性。
n-type β-Ga_2O_3 thin-film material was epitaxially grown by metal organic chemical vapor deposition (MOCVD) on the (010) Fe-doped semi-insulating Ga_2O_3 substrate. The material structure consisted of a 400 nm unintentional doping Ga_2O_3 buffer layer and a 40 nm Si-doped channel layer. The Ga_2O_3 metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated based on the n-type β-Ga_2O_3 film with a doping concentration of 2. 0 × 1018 cm~(-3). 25 nm HfO_2 was deposited by atomic layer deposition as the gate dielectric. The device exhibits good electrical properties. The drain source saturation current density of the fabricated device reaches 42 m A/mm at Vgsof 8 V,and the peak transconductance is about 3. 8 m S/mm,and the on-to-off current ratio reaches 108. Moreover,the three-terminal offstate breakdown voltage of the fabricated device is 113 V. The electrical performances of the Ga_2O_3 MOSFET,such as the saturation current and breakdown voltage can be further improved by the optimized n-type Ga_2O_3 channel structure and introducing field plate structure.
n-type β-Ga_2O_3 thin-film material was epitaxially grown by metal organic chemical vapor deposition (MOCVD) on the (010) Fe-doped semi-insulating Ga_2O_3 substrate. The material structure consisted of a 400 nm unintentional doping Ga_2O_3 buffer layer and a 40 nm Si-doped channel layer. The Ga_2O_3 metal-oxide-semiconductor field-effect transistor (MOSFET) was fabricated based on the n-type β-Ga_2O_3 film with a doping concentration of 2. 0 × 1018 cm~(-3). 25 nm HfO_2 was deposited by atomic layer deposition as the gate dielectric. The device exhibits good electrical properties. The drain source saturation current density of the fabricated device reaches 42 m A/mm at Vgsof 8 V,and the peak transconductance is about 3. 8 m S/mm,and the on-to-off current ratio reaches 108. Moreover,the three-terminal offstate breakdown voltage of the fabricated device is 113 V. The electrical performances of the Ga_2O_3 MOSFET,such as the saturation current and breakdown voltage can be further improved by the optimized n-type Ga_2O_3 channel structure and introducing field plate structure.
引文
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[2]GREEN A J,CHABAK K D,HELLER E R,et al.3.8 MV/cm breakdown strength of MOVPE-grown Sndopedβ-Ga2O3MOSFETs[J].IEEE Electron Deivce Lettdrs,2016,37(7):902-905.
[3]MOSER N,MCCANDLESS J,CRESPO A,et al.Gedopedβ-Ga2O3MOSFETs[J].IEEE Electron Deivce Letters,2017,38(6):775-778.
[4]MOHAMED M,JANOWITZ C,MANZKE U R,et al.The electronic structure ofβ-Ga2O3[J].Applied Physics Letters,2010,97(21):211903-1-211903-3.
[5]KOKUBUN Y,KASUMI M,FUMIE E,et al.Sol-gel preparedβ-Ga2O3thin films for ultraviolet photodetectors[J].Applied Physics Letters,2007,90(3):A316-1-A316-3.
[6]LEE S Y,CHOI K H,KANG H C,Growth mechanism of In-dopedβ-Ga2O3nanowires deposited by frequency powder sputtering[J].Materials Letters,2016,176:213-218.
[7]GOYAL A,BRAJESH S Y,THAKUR O P,et al.Effect of annealing onβ-Ga2O3film grown by pulsed laser deposition technique[J].Journal of Alloys and Compounds,2014,583:214-219.
[8]HUANG C Y,HORNG R H,WUU D S,et al.Thermal annealing effect on material characterizations ofβ-Ga2O3epilayer grown by metal organic chemical vapor deposition[J].Applied Physics Letters,2013,102(1):A316-1-A316-3.
[9]TSAI M Y,BIERWAGEN O,WHITE M E,et al.β-Ga2O3grown by plasma-assisted molecular beam epitaxy[J].Journal of Vacuum Sciece&Technology:A,2010,28(3):354-359.
[10]WONG M H,SASAKI K,KURAMATA A,et al.Fieldplated Ga2O3MOSFET with a breakdown voltage of over750 V[J].IEEE Electron Deivce Letters,2016,37:212-215.
[11]ZHOU H,MAIZE K,QIU G,et al.β-Ga2O3on insulator field-effect transistors with drain currents exceeding1.5 A/mm and their self-heating effect[J].Applied Physics Letters,2017,111:092102.1-092102.4.
[12]郭进进,刘爱华,满宝元,等.LMBE法异质外延β-Ga2O3薄膜及其紫外和发光特性的研究[J].材料导报,2012,26(6):52-58.GUO J J,LIU A H,MAN B Y,et al.Heteroepitaxy,ultraviolet and luminescence characterizations ofβ-Ga2O3grown using LMBE[J].Materials Review,2012,26(6):52-58(in Chinese).
[13]何彬,邢杰,段艳廷,等.Ga2O3紫外光探测器的研究进展[J].材料导报,2013,27(22):157-163.HE B,XING J,DUAN Y T,et al.Research progress of Ga2O3UV photodetectors[J].Materials Review,2013,27(22):157-163(in Chinese).