Laser-induced damage threshold in HfO_2/SiO_2 multilayer films irradiated by β-ray
|
摘要
Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm~2 to 12 J/cm~2, i.e., 50% increase, after the film has been irradiated by 2.2×10~(13)/cm~2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.
Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm~2 to 12 J/cm~2, i.e., 50% increase, after the film has been irradiated by 2.2×10~(13)/cm~2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.
Post-processing can effectively improve the resistance to laser damage in multilayer films used in a high power laser system. In this work, HfO_2/SiO_2 multilayer films are prepared by e-beam evaporation and then β-ray irradiation is employed as the post-processing method. The particle irradiation affects the laser induced damage threshold(LIDT),which includes defects, surface roughness, packing density and residual stress. The residual stress that is relaxed during irradiation changes from compressive stress into tensile stress. Our results indicate that appropriate tensile stress can improve LIDT remarkably. In view of the fact that LIDT rises from 8 J/cm~2 to 12 J/cm~2, i.e., 50% increase, after the film has been irradiated by 2.2×10~(13)/cm~2 β-ray, the particle irradiation can be used as a controllable and desirable postprocessing method to improve the resistance to laser induced damage.
引文
[1]Liu W W,Wei C Y,Wu J B,Yu Z K,Cui H,Yi K and Shao J D 2013Opt.Express 21 22476
[2]Oliver J B 2012“Evaporated Hafnia/Silicon Dioxide Optical Coatings and Modifications for High-Power Laser Applications”,Ph.D.dissertation(New York:University of Rochester)
[3]Dai F,Shi W Q,Yang B J and Huang W C 2017 Adv.Mater.Phys.Chem.7 242
[4]Tokas R B,Kamble N M,Jena S,Thakur S,Poswal A K and Sahoo NK 2012 Am.Inst.Phys.1451 76
[5]Duan W R 2014“The effect of surface processing methods on the laser induced damage threshold of fused silica”,Ph.D.dissertation(Preston:University of Central Lancashire
[6]Li Y,Yan H W,Yang K,Yao C Z,Wang Z Q,Yan C Y,Zou X S,Yuan X D,Yang L M and Ju X 2017 Chin.Phys.B 26 118104
[7]Lv Q P,Huang M L,Zhang S Q,Deng S W,Gong F Q,Wang F,Pan YW,Li G and Jin Y Q 2018 Coatings 8 150
[8]Zhang H,Jin Y X,Wang H,Kong F Y,Huang H P and Cui Y 2016Chin.Phys.B 25 104205
[9]Wang L S,Liu H S,Jiang Y G,Yang X,Liu D D,Ji Y Q,Zhang F and Chen D Y 2017 Optik 142 33
[10]Liu H S,Wang L S,Jiang Y G,Li S D,Liu D D,Ji Y Q,Zhang F and Chen D Y 2018 Vacuum 148 258
[11]Bananej A,Hassanpour A,Razzaghi H,Zade M V and Mohammadi A2010 Opt.Laser Technol.42 1187
[12]Shaw-Klein L J,Burns S J and Jacobs S D 1993 Appl.Opt.32 3925
[13]Pranevicius L,Badawi K F,Dur,N,Delafond J and Goudeau P 1995Surf.Coat.Technol.71 254
[14]Badawi K F,Goudeau P,Pacaud J,Jaouen C,Delafond J,Naudon Aand Gladyszewski G 1993 Nucl.Instrum.Methods Phys.Res.Sect.B80 404
[15]Badawi K F,Declemy A,Naudon A and Goudeau P 1992 J.Phys.III 21741
[16]Cen M,Zhang Y G,Chen W L and Gu P F 2009 Acta Phys.Sin.587025(in Chinese)
[17]Kim Y D,Wei T and Coodman D W 2003 Langmuir 19 354
[18]RastorgueV A A,Belyi V I,Smirnova T P and Yakovkina L V 2007Phys.Rev.B 76 235315
[19]Shojaee S A,Qi Y,Wang Y Q,Mehner A and Lucca D A 2017 Sci.Rep.7 40100
[20]Qi Y F,Fang J Z and Xie C Q 1996 Opto-Elec.Eng.23 40(in Chinese)
[21]Gu P F,Zheng Zh R,Zhao Y J and Liu X 2006 Acta Phys.Sin.55 6459(in Chinese)
[22]Ling X L,Liu X F,Wang G and Fan Z X 2015 Vacuum 119 145
[2]Oliver J B 2012“Evaporated Hafnia/Silicon Dioxide Optical Coatings and Modifications for High-Power Laser Applications”,Ph.D.dissertation(New York:University of Rochester)
[3]Dai F,Shi W Q,Yang B J and Huang W C 2017 Adv.Mater.Phys.Chem.7 242
[4]Tokas R B,Kamble N M,Jena S,Thakur S,Poswal A K and Sahoo NK 2012 Am.Inst.Phys.1451 76
[5]Duan W R 2014“The effect of surface processing methods on the laser induced damage threshold of fused silica”,Ph.D.dissertation(Preston:University of Central Lancashire
[6]Li Y,Yan H W,Yang K,Yao C Z,Wang Z Q,Yan C Y,Zou X S,Yuan X D,Yang L M and Ju X 2017 Chin.Phys.B 26 118104
[7]Lv Q P,Huang M L,Zhang S Q,Deng S W,Gong F Q,Wang F,Pan YW,Li G and Jin Y Q 2018 Coatings 8 150
[8]Zhang H,Jin Y X,Wang H,Kong F Y,Huang H P and Cui Y 2016Chin.Phys.B 25 104205
[9]Wang L S,Liu H S,Jiang Y G,Yang X,Liu D D,Ji Y Q,Zhang F and Chen D Y 2017 Optik 142 33
[10]Liu H S,Wang L S,Jiang Y G,Li S D,Liu D D,Ji Y Q,Zhang F and Chen D Y 2018 Vacuum 148 258
[11]Bananej A,Hassanpour A,Razzaghi H,Zade M V and Mohammadi A2010 Opt.Laser Technol.42 1187
[12]Shaw-Klein L J,Burns S J and Jacobs S D 1993 Appl.Opt.32 3925
[13]Pranevicius L,Badawi K F,Dur,N,Delafond J and Goudeau P 1995Surf.Coat.Technol.71 254
[14]Badawi K F,Goudeau P,Pacaud J,Jaouen C,Delafond J,Naudon Aand Gladyszewski G 1993 Nucl.Instrum.Methods Phys.Res.Sect.B80 404
[15]Badawi K F,Declemy A,Naudon A and Goudeau P 1992 J.Phys.III 21741
[16]Cen M,Zhang Y G,Chen W L and Gu P F 2009 Acta Phys.Sin.587025(in Chinese)
[17]Kim Y D,Wei T and Coodman D W 2003 Langmuir 19 354
[18]RastorgueV A A,Belyi V I,Smirnova T P and Yakovkina L V 2007Phys.Rev.B 76 235315
[19]Shojaee S A,Qi Y,Wang Y Q,Mehner A and Lucca D A 2017 Sci.Rep.7 40100
[20]Qi Y F,Fang J Z and Xie C Q 1996 Opto-Elec.Eng.23 40(in Chinese)
[21]Gu P F,Zheng Zh R,Zhao Y J and Liu X 2006 Acta Phys.Sin.55 6459(in Chinese)
[22]Ling X L,Liu X F,Wang G and Fan Z X 2015 Vacuum 119 145