IGBT结构设计发展与展望
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摘要
首先从绝缘栅型双极性晶体管(IGBT)的物理模型展开讨论,分析了影响IGBT性能的几个重要特性参数,对其结构的优化和改进提供了理论支撑。其次论述了IGBT问世以来的主要结构设计发展历程,以及国际主流IGBT设计厂商对各自IGBT产品结构做出的独创性改进。最后对目前研究的新技术热点如逆导型IGBT半导体器件进行了介绍,并对IGBT器件的发展方向提出展望。
In this letter, the physical model of insulated gate bipolar transistor(IGBT) was discussed firstly.Several important parameters that affect the performance of IGBT were analyzed, in order to provide theoretical support for the optimization and improvement of IGBT structural design. Moreover, the development of IGBT structural design and creative improvements made by different mainstream designers from the appearance of IGBT were mainly discussed. Furthermore, a new attractive research point, reverse conducting IGBT semiconductor device was introduced to explore the prospect of IGBT development.
In this letter, the physical model of insulated gate bipolar transistor(IGBT) was discussed firstly.Several important parameters that affect the performance of IGBT were analyzed, in order to provide theoretical support for the optimization and improvement of IGBT structural design. Moreover, the development of IGBT structural design and creative improvements made by different mainstream designers from the appearance of IGBT were mainly discussed. Furthermore, a new attractive research point, reverse conducting IGBT semiconductor device was introduced to explore the prospect of IGBT development.
引文
[1]Carl Blake,Chris Bull.IGBT or MOSFET:Choose Wisely[J].International Rectifier,1970.
[2]吴济均.电力半导体器件的现状及发展趋势[J].电力电子技术,1995(dl):77-83.
[3]王宏.半导体电力电子器件发展概况及国内发展展望[J].微处理机,2002(2):4-6.
[4]周文定,亢宝位.不断发展中的IGBT技术概述[J].电力电子技术,2007,18(9):115-118.
[5]叶立剑,邹勉,杨小慧.IGBT技术发展综述[J].半导体技术,2008,33(11):937-940.
[6]Leo Lozenz.Power Semiconductor Device and Design Criteria[R].2012.
[7]戚丽娜,张景超,刘利峰,等.IGBT器件的发展[J].电力电子技术,2012,46(12):34-38.
[8]张金平,李泽宏,任敏,等.绝缘栅双极型晶体管的研究进展[J].中国电子科学研究院学报,2014,9(2):111-119.
[9]支崇珏.电力电子器件在轨道交通车辆牵引中的应用[J].科技信息:科学教研,2008(17):307-308.
[10]王瑞.大功率IGBT特性及在变频器中应用研究[J].宝鸡文理学院学报:自然科学版,2014,34(3):64-66.
[11]丁荣军,刘国友.轨道交通用高压IGBT技术特点及其发展趋势[J].机车电传动,2014(1):1-6.
[12]冯松,高勇,FENG Song,等.温度对3种IGBT结构通态特性的影响[J].电力电子技术,2016,50(6):97-100.
[13]陈为真,张丙可,陈星弼.关于IGBT的四种结构的研究[J].中国科技论文在线,2016.
[14]Katsumi Satoh,Tetsuo Takahashi,Hidenofi Fujii,等.用于下一代功率模块中的新一代硅片设计[J].电力电子技术,2008,42(10):75-77.
[15]Dewar S,Linder S,von Arx C,Mukhitinov A,Debled G.Soft Punch Through(SPT)-Setting new Standards in 1200V IGBT[C].PCIM Europe Conference Proceedings,2000.
[16]C Corvasce,A Kopta,J Vobecky.New 1700 SPT+IGBTand Diode Chip Set with 175℃Operating Junction Temperaure[C].PCIM Europe 2006 Conference Proceedings.
[17]Sven Matthias,Chiara Corvasce.The 62Pak IGBT module range employing the 3rdGeneration 1700 V SPT++chip set for 175℃operation[C].PCIM Asia,2016.
[18]M Baβler,P Kanschat,F Umbach.1200 V IGBT4-High Power-A New Technology Generation with Optimized Characteristics for High Current Modules[C].PCIM Europe,2006.
[19]Xi,Z,Jansen,U,Rüthing,H,Ag,I T(2009).IGBT power modules utilizing new 650 V IGBT 3 and Emitter Controlled Diode 3 chips for three level converter[C].PCIM Eruope 2009:1-6.
[20]Wilhelm Rusche,Andre R Stegner.More Power by IGBT5with XT[J].Electronics in Motion and Conversion,May2015.
[21]Kota Ohara,Hiroyuki Masumoto.A New IGBT Module with Insulated Metal Baseplate(IMB)and 7thChip[C].Nuremberg Germany:PCIM Europe,2015:19-21.
[22]Dr-Ing Arendt Wintrich,Dr-Ing Ulrich Nicolai,Dr techn Werner Tursky.Application Manual Power Semiconductors[C].SEMIKRON Internation.
[23]张文亮,田晓丽,谈景飞,等.逆导型IGBT发展概述[J].半导体技术,2012,37(11):17-22.
[24]李晓平,刘江,赵哿,等.逆导型IGBT的发展及其在智能电网中的应用[J].智能电网,2017,5(1):1-8.
[25]Khanna V.Insulated Gate Bipolar Transistor IGBT Theory and Design[M].Wiley-IEEE Press,2003.
[26]赵芬.IGBT模型仿真研究[D].合肥:合肥工业大学,2010.
[27]肖璇.3300 V Planar IGBT的仿真分析与设计[D].成都:电子科技大学,2012.
[28]陈永淑.IGBT的可靠性模型研究[D].重庆:重庆大学,2010.
[29]李锋.功率IGBT的若干失效问题研究[D].西安:西安理工大学,2009.
[30]付耀龙.IGBT的分析与设计[D].哈尔滨:哈尔滨工业大学,2010.
[31]茹意.大功率IGBT建模与瞬态分析研究[D].北京:北方工业大学,2010.
[32]Rahimo M,Lukasch W,Arx C V,et al.Novel Soft-Punch-Through(SPT)1700 V IGBT Sets Benchmark on Technology Curve[C].Positive Temperature Coefficient,2001.
[33]M Rahimo,A Kopta,E Carroll.Hi Pak~(TM)高压SPTIGBT模块的SOA新基准[J].电力电子技术,2007,41(3):100-102.
[34]刘国友.具有低损耗、宽安全工作区的1700 V平面栅软穿通IGBT[C].2014全国半导体器件产业发展、创新产品和新技术研讨会暨中国微纳电子技术交流与学术研讨会,2014.
[35]Norbert Pluschke,张文瑞.SPT+未来的IGBT技术及先进的封装技术[C].2006中国电工技术学会电力电子学会学术年会,2006.
[36]胡冬青.SPT+下一代低损耗高压IGBT[J].电力电子,2006(6):37-41.
[37]褚为利,朱阳军,张杰,et al.SPT+IGBT characteristics and optimization[J].Journal of Semiconductors,2013,2(1):863-867.
[38]Udrea F,Chan S S M,Thomson J,et al.Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology[C].Solid-State Device Research Conference,1997.Proceeding of the,European.IEEE,1997:504-507.
[39]N沃马罗,M奥苏基,Y霍希,等.1200 V和1700 V新型IGBT模块沟槽及电场截止型IGBT低注入续流二极管[J].电力电子,2004(4):44-47.
[40]Koga T,Kakiki H,Zhan M.3.3 k V IGBT Modules with Trench Gate FS Structure[C].International exhibition&conference for power electronics intelligent motion power quality,2011.
[41]赵起越.1200 V TRENCH-FS型IGBT的设计[D].成都:电子科技大学,2013.
[42]李丹.600 V Trench FS IGBT的设计[D].成都:电子科技大学,2016.
[43]Kitagawa M,Omura I,Hasegawa S,et al.A 4500 Vinjection enhanced insulated gate bipolar transistor(IEGT)operating in a mode similar to a thyristor[C].Electron Devices Meeting,1993.IEDM'93.Technical Digest.International.IEEE,1993:679-682.
[44]沈千行,张须坤,张广银,等.IGBT载流子增强技术发展概述[J].半导体技术,2016(10):751-758.
[45]Ohara K,Masumoto H,Takahashi T,et al.A New IGBTModule with Insulated Metal Baseplate(IMB)and 7th Generation Chips[C].PCIM Europe 2015;International Exhibition and Conference for Power Electronics,Intelligent Motion,Renewable Energy and Energy Management;Proceedings of.VDE,2015:1-4.
[46]Yosuke Nakata.New Performance 7thGeneration Chip Installed Power Module for EV/HEV Inventers[C].Nuremberg,Germany:PCIM Europe,2015:19-21.
[47]Honda S,Haraguchi Y,Narazaki A,et al.Next generation600 V CSTBT?with an advanced fine pattern and a thin wafer process technologies[C].International Symposium on Power Semiconductor Devices and ICS.IEEE,2012:149-152.
[48]Kamibaba R,Konishi K,Fukada Y,et al.Next generation650 V CSTBTTM with improved SOA fabricated by an advanced thin wafer technology[C].IEEE,International Symposium on Power Semiconductor Devices&Ic's.IEEE,2015:29-32.
[49]Xue P,Fu G.Analysis of the dynamic avalanche of carrier stored trench bipolar transistor(CSTBT)during clamped inductive turn-off transient[J].Solid-State Electronics,2017,129:35-43.
[50]韩辉,宋高升,石原美希.应用于电动汽车的Pin-Fin功率半导体模块[J].电力电子技术,2015,49(11):81-82.
[51]H Takahashi,A Yamamoto,S Anon,T Minato.1200 VReverse Conducting IGBT[C].Proc ISPSD’04,2004:133.
[52]Storasta L,Kopta A,Rahimo M.A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor Bi GT[C].International Symposium on Power Semiconductor Devices&Ic's,IEEE,2010:391-394.
[53]Rahimo M,Kopta A,Schlapbach U,et al.The Bi-mode Insulated Gate Transistor(Bi GT)A potential technology for higher power applications[C].Proceedings of the 21rd International Symposium on Power Semiconductor Devices&IC's,Barcelona,2009:283-286.
[54]Storasta L,Rahimo M,Bellini M,et al.The radial layout design concept for the Bi-mode insulated gate transistor[C].Proceedings of the 23rdInternational Symposium on Power Semiconductor Devices&IC's,San Diego,2011:56-59.
[55]Storasta L,Matthias S,Kopta A,et al.Bipolar transistor gain influence on the high temperature thermal stability of HV-Bi GTs[C].International Symposium on Power Semiconductor Devices and ICS,IEEE,2012:157-160.
[56]Shogo Shibata.New Transfer-Molded SLIMDIP for white goods using thin RC-IGBT with a CSTBT structure[M].Nuremberg,Germany:PCIM Europe,2015:19-21.
[57]Ruthing H,Hille F,Niedernostheide F-J,et al.600 VReverse Conducting IGBT for Drives Applications in Ultra-Thin Wafer Technology[C].Proceedings of the 19rd International Symposium on Power Semiconductor,2007,89-92.
[58]陈伟中.RC-IGBT的理论模型与新结构研究[D].成都:电子科技大学,2014.
[59]郭绪阳.1200 V逆导型Trench FS IGBT的设计[D].成都:电子科技大学,2016.
[60]李晓平,赵哿,刘江,等.3300 V逆导型IGBT器件仿真[J].固体电子学研究与进展,2016(5):406-410.
[2]吴济均.电力半导体器件的现状及发展趋势[J].电力电子技术,1995(dl):77-83.
[3]王宏.半导体电力电子器件发展概况及国内发展展望[J].微处理机,2002(2):4-6.
[4]周文定,亢宝位.不断发展中的IGBT技术概述[J].电力电子技术,2007,18(9):115-118.
[5]叶立剑,邹勉,杨小慧.IGBT技术发展综述[J].半导体技术,2008,33(11):937-940.
[6]Leo Lozenz.Power Semiconductor Device and Design Criteria[R].2012.
[7]戚丽娜,张景超,刘利峰,等.IGBT器件的发展[J].电力电子技术,2012,46(12):34-38.
[8]张金平,李泽宏,任敏,等.绝缘栅双极型晶体管的研究进展[J].中国电子科学研究院学报,2014,9(2):111-119.
[9]支崇珏.电力电子器件在轨道交通车辆牵引中的应用[J].科技信息:科学教研,2008(17):307-308.
[10]王瑞.大功率IGBT特性及在变频器中应用研究[J].宝鸡文理学院学报:自然科学版,2014,34(3):64-66.
[11]丁荣军,刘国友.轨道交通用高压IGBT技术特点及其发展趋势[J].机车电传动,2014(1):1-6.
[12]冯松,高勇,FENG Song,等.温度对3种IGBT结构通态特性的影响[J].电力电子技术,2016,50(6):97-100.
[13]陈为真,张丙可,陈星弼.关于IGBT的四种结构的研究[J].中国科技论文在线,2016.
[14]Katsumi Satoh,Tetsuo Takahashi,Hidenofi Fujii,等.用于下一代功率模块中的新一代硅片设计[J].电力电子技术,2008,42(10):75-77.
[15]Dewar S,Linder S,von Arx C,Mukhitinov A,Debled G.Soft Punch Through(SPT)-Setting new Standards in 1200V IGBT[C].PCIM Europe Conference Proceedings,2000.
[16]C Corvasce,A Kopta,J Vobecky.New 1700 SPT+IGBTand Diode Chip Set with 175℃Operating Junction Temperaure[C].PCIM Europe 2006 Conference Proceedings.
[17]Sven Matthias,Chiara Corvasce.The 62Pak IGBT module range employing the 3rdGeneration 1700 V SPT++chip set for 175℃operation[C].PCIM Asia,2016.
[18]M Baβler,P Kanschat,F Umbach.1200 V IGBT4-High Power-A New Technology Generation with Optimized Characteristics for High Current Modules[C].PCIM Europe,2006.
[19]Xi,Z,Jansen,U,Rüthing,H,Ag,I T(2009).IGBT power modules utilizing new 650 V IGBT 3 and Emitter Controlled Diode 3 chips for three level converter[C].PCIM Eruope 2009:1-6.
[20]Wilhelm Rusche,Andre R Stegner.More Power by IGBT5with XT[J].Electronics in Motion and Conversion,May2015.
[21]Kota Ohara,Hiroyuki Masumoto.A New IGBT Module with Insulated Metal Baseplate(IMB)and 7thChip[C].Nuremberg Germany:PCIM Europe,2015:19-21.
[22]Dr-Ing Arendt Wintrich,Dr-Ing Ulrich Nicolai,Dr techn Werner Tursky.Application Manual Power Semiconductors[C].SEMIKRON Internation.
[23]张文亮,田晓丽,谈景飞,等.逆导型IGBT发展概述[J].半导体技术,2012,37(11):17-22.
[24]李晓平,刘江,赵哿,等.逆导型IGBT的发展及其在智能电网中的应用[J].智能电网,2017,5(1):1-8.
[25]Khanna V.Insulated Gate Bipolar Transistor IGBT Theory and Design[M].Wiley-IEEE Press,2003.
[26]赵芬.IGBT模型仿真研究[D].合肥:合肥工业大学,2010.
[27]肖璇.3300 V Planar IGBT的仿真分析与设计[D].成都:电子科技大学,2012.
[28]陈永淑.IGBT的可靠性模型研究[D].重庆:重庆大学,2010.
[29]李锋.功率IGBT的若干失效问题研究[D].西安:西安理工大学,2009.
[30]付耀龙.IGBT的分析与设计[D].哈尔滨:哈尔滨工业大学,2010.
[31]茹意.大功率IGBT建模与瞬态分析研究[D].北京:北方工业大学,2010.
[32]Rahimo M,Lukasch W,Arx C V,et al.Novel Soft-Punch-Through(SPT)1700 V IGBT Sets Benchmark on Technology Curve[C].Positive Temperature Coefficient,2001.
[33]M Rahimo,A Kopta,E Carroll.Hi Pak~(TM)高压SPTIGBT模块的SOA新基准[J].电力电子技术,2007,41(3):100-102.
[34]刘国友.具有低损耗、宽安全工作区的1700 V平面栅软穿通IGBT[C].2014全国半导体器件产业发展、创新产品和新技术研讨会暨中国微纳电子技术交流与学术研讨会,2014.
[35]Norbert Pluschke,张文瑞.SPT+未来的IGBT技术及先进的封装技术[C].2006中国电工技术学会电力电子学会学术年会,2006.
[36]胡冬青.SPT+下一代低损耗高压IGBT[J].电力电子,2006(6):37-41.
[37]褚为利,朱阳军,张杰,et al.SPT+IGBT characteristics and optimization[J].Journal of Semiconductors,2013,2(1):863-867.
[38]Udrea F,Chan S S M,Thomson J,et al.Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology[C].Solid-State Device Research Conference,1997.Proceeding of the,European.IEEE,1997:504-507.
[39]N沃马罗,M奥苏基,Y霍希,等.1200 V和1700 V新型IGBT模块沟槽及电场截止型IGBT低注入续流二极管[J].电力电子,2004(4):44-47.
[40]Koga T,Kakiki H,Zhan M.3.3 k V IGBT Modules with Trench Gate FS Structure[C].International exhibition&conference for power electronics intelligent motion power quality,2011.
[41]赵起越.1200 V TRENCH-FS型IGBT的设计[D].成都:电子科技大学,2013.
[42]李丹.600 V Trench FS IGBT的设计[D].成都:电子科技大学,2016.
[43]Kitagawa M,Omura I,Hasegawa S,et al.A 4500 Vinjection enhanced insulated gate bipolar transistor(IEGT)operating in a mode similar to a thyristor[C].Electron Devices Meeting,1993.IEDM'93.Technical Digest.International.IEEE,1993:679-682.
[44]沈千行,张须坤,张广银,等.IGBT载流子增强技术发展概述[J].半导体技术,2016(10):751-758.
[45]Ohara K,Masumoto H,Takahashi T,et al.A New IGBTModule with Insulated Metal Baseplate(IMB)and 7th Generation Chips[C].PCIM Europe 2015;International Exhibition and Conference for Power Electronics,Intelligent Motion,Renewable Energy and Energy Management;Proceedings of.VDE,2015:1-4.
[46]Yosuke Nakata.New Performance 7thGeneration Chip Installed Power Module for EV/HEV Inventers[C].Nuremberg,Germany:PCIM Europe,2015:19-21.
[47]Honda S,Haraguchi Y,Narazaki A,et al.Next generation600 V CSTBT?with an advanced fine pattern and a thin wafer process technologies[C].International Symposium on Power Semiconductor Devices and ICS.IEEE,2012:149-152.
[48]Kamibaba R,Konishi K,Fukada Y,et al.Next generation650 V CSTBTTM with improved SOA fabricated by an advanced thin wafer technology[C].IEEE,International Symposium on Power Semiconductor Devices&Ic's.IEEE,2015:29-32.
[49]Xue P,Fu G.Analysis of the dynamic avalanche of carrier stored trench bipolar transistor(CSTBT)during clamped inductive turn-off transient[J].Solid-State Electronics,2017,129:35-43.
[50]韩辉,宋高升,石原美希.应用于电动汽车的Pin-Fin功率半导体模块[J].电力电子技术,2015,49(11):81-82.
[51]H Takahashi,A Yamamoto,S Anon,T Minato.1200 VReverse Conducting IGBT[C].Proc ISPSD’04,2004:133.
[52]Storasta L,Kopta A,Rahimo M.A comparison of charge dynamics in the reverse-conducting RC IGBT and Bi-mode Insulated Gate Transistor Bi GT[C].International Symposium on Power Semiconductor Devices&Ic's,IEEE,2010:391-394.
[53]Rahimo M,Kopta A,Schlapbach U,et al.The Bi-mode Insulated Gate Transistor(Bi GT)A potential technology for higher power applications[C].Proceedings of the 21rd International Symposium on Power Semiconductor Devices&IC's,Barcelona,2009:283-286.
[54]Storasta L,Rahimo M,Bellini M,et al.The radial layout design concept for the Bi-mode insulated gate transistor[C].Proceedings of the 23rdInternational Symposium on Power Semiconductor Devices&IC's,San Diego,2011:56-59.
[55]Storasta L,Matthias S,Kopta A,et al.Bipolar transistor gain influence on the high temperature thermal stability of HV-Bi GTs[C].International Symposium on Power Semiconductor Devices and ICS,IEEE,2012:157-160.
[56]Shogo Shibata.New Transfer-Molded SLIMDIP for white goods using thin RC-IGBT with a CSTBT structure[M].Nuremberg,Germany:PCIM Europe,2015:19-21.
[57]Ruthing H,Hille F,Niedernostheide F-J,et al.600 VReverse Conducting IGBT for Drives Applications in Ultra-Thin Wafer Technology[C].Proceedings of the 19rd International Symposium on Power Semiconductor,2007,89-92.
[58]陈伟中.RC-IGBT的理论模型与新结构研究[D].成都:电子科技大学,2014.
[59]郭绪阳.1200 V逆导型Trench FS IGBT的设计[D].成都:电子科技大学,2016.
[60]李晓平,赵哿,刘江,等.3300 V逆导型IGBT器件仿真[J].固体电子学研究与进展,2016(5):406-410.