热壁外延制备InAs/Si(211)薄膜及其电学性能研究
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摘要
采用热壁外延(Hot Wall Epitaxy,HWE)沉积系统在单晶Si(211)衬底表面制备了In As薄膜,研究了不同生长温度(300℃、350℃、400℃、450℃和500℃)对薄膜材料结构及其电学性能的影响。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、霍尔(Hall)测试等,对In As/Si(211)薄膜的晶体结构、表面形貌及电学参数进行了测试分析。结果表明:采用HWE技术在Si(211)衬底表面成功制备了In As薄膜,薄膜具有闪锌矿结构并沿(111)方向择优生长。随着生长温度从300℃升高到500℃,全峰半高宽(FWHM)先减小后增大,生长温度为400℃时薄膜的晶粒尺寸最大为73.4 nm,载流子浓度达到1022cm-3,霍尔迁移率数值约为102cm2/(V·s),说明优化生长温度能够降低In As薄膜的缺陷复合,使薄膜结晶质量和电学性能得到提高。SEM及AFM的测试结果显示由于较高的晶格失配及Si衬底斜切面(211)的特殊取向,在Si(211)衬底上生长的In As薄膜主要为三维层加岛状(S-K)生长模式,表面粗糙度(Ra)随温度的升高先减小后增大,400℃时薄膜的平均表面粗糙度Ra为48.37 nm。
High preferred orientation In As films were prepared on the surface of single crystalline Si(211) substrates by Hot Wall Epitaxy(HWE) deposition. The effects of growth temperatures(300 ℃,350 ℃,400 ℃,450 ℃,and 500 ℃) on the structure and electrical properties of the films were studied in details. The phase structure,surface morphology,electrical and optical properties of the films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM) and hall measurements(Hall). The results indicate that the In As films are successfully deposited on the surface of Si(211) substrates by HWE technique. All the films were shown preferentially grown along the(111) direction with zinc blende structure. With the growth temperature increasing from 300 ℃ to 500 ℃,and the full width at half maximum(FWHM) of(111) peak decreases initially and then increases accordingly. The grain size,carrier concentration and Hall mobility of the In As thin film reaches 73. 4 nm,1022 cm-3 and 102 cm2/(V·s) at 400 ℃ respectively,which suggests that the optimal growth temperature increases the carrier density significantly by degrading defect recombination. The crystal quality and electrical performance of the films were improved accordingly. Theresults of SEM and AFM show that the growth of In As on Si(211) substrate were mainly three dimensional(S-K) growth mode,due to the high lattice mismatch and the special orientation of Si substrate tilted(211) plane. The surface roughness(Ra) decreases first and then increases with increasing of the growth temperatures. The Ra of the film at 400 ℃ reaches 48. 37 nm.
High preferred orientation In As films were prepared on the surface of single crystalline Si(211) substrates by Hot Wall Epitaxy(HWE) deposition. The effects of growth temperatures(300 ℃,350 ℃,400 ℃,450 ℃,and 500 ℃) on the structure and electrical properties of the films were studied in details. The phase structure,surface morphology,electrical and optical properties of the films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM) and hall measurements(Hall). The results indicate that the In As films are successfully deposited on the surface of Si(211) substrates by HWE technique. All the films were shown preferentially grown along the(111) direction with zinc blende structure. With the growth temperature increasing from 300 ℃ to 500 ℃,and the full width at half maximum(FWHM) of(111) peak decreases initially and then increases accordingly. The grain size,carrier concentration and Hall mobility of the In As thin film reaches 73. 4 nm,1022 cm-3 and 102 cm2/(V·s) at 400 ℃ respectively,which suggests that the optimal growth temperature increases the carrier density significantly by degrading defect recombination. The crystal quality and electrical performance of the films were improved accordingly. Theresults of SEM and AFM show that the growth of In As on Si(211) substrate were mainly three dimensional(S-K) growth mode,due to the high lattice mismatch and the special orientation of Si substrate tilted(211) plane. The surface roughness(Ra) decreases first and then increases with increasing of the growth temperatures. The Ra of the film at 400 ℃ reaches 48. 37 nm.
引文
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[26]Wang X J,Chang Y,Becker C R,et al.Microstructure of Heteroepitaxial Zn Te Grown by Molecular Beam Epitaxy on Si(211)Substrates[J].Journal of Electronic Materials,2011,40(8):1860-1866.
[2]Wei W,Bao X Y,Soci C,et al.Direct Heteroepitaxy of Vertical In As Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection[J].Nano Letters,2009,9(8):2926-2934.
[3]Tomioka K,Fukui T.Tunnel field-effect transistor using In As nanowire/Si heterojunction[J].Applied Physics Letters,2011,98(8):3114.
[4]赵有文,孙文荣,段满龙,等.高质量In As单晶材料的制备及其性质[J].半导体学报,2006,27(8):1391-1395.
[5]杨俊,段满龙,董志远,等.3英寸In As单晶生长及衬底制备[C].第十七届全国化合物半导体、微波器件和光电器件学术会议,河南开封,2012:316-318.
[6]Ghalamestani S G,Berg M,Dick K A,et al.High Quality In As and Ga Sb Thin Layers Grown on Si(111)[J].Journal of Crystal Growth,2011,332(1):12-16.
[7]Gao Y Z,Gong XY,Gui Y S,et al.Electrical Properties of Melt-Epitaxy-Grown In As0.04Sb0.96Layers with Cutoff Wavelength of 12μm[J].Japanese Journal of Applied Physics,2004,43(3):1051-1054.
[8]Naceur H B,Moussa I,Tottereau O,et al.Heteroepitaxial Growth of Thin In As Layers on Ga As(100)Misoriented Substrates:A Structural and Morphological Comparison[J].Physica E,2009,41(10):1779-1783.
[9]Mandl B,Dey A W,Stangl J,et al.Self-seeded,Position-Controlled In As Nanowire Growth on Si:A Growth Parameter Study[J].Journal of Crystal Growth,2011,334(1):51-56.
[10]Komninou P,Gladkov P,Karakostas T,et al.Structural and Photoluminescent Properties of Low Temperature In As Buffer Layer Brown by MOVPE on Ga As Substrates[J].Journal of Crystal Growth,2014,396:54-60.
[11]Lee G,Efimov O,Yoon Y G,et al.Energetics of Island Formation of Al As,Ga As,and In As on Si(100)[J].Journal of the Korean Physical Society,2012,60(5):777-780.
[12]Baisitse T R,Forbes A,Katumba G,et al.Characterisation of In As-based Epilayers by FTIR Spectroscopy[J].Physica Status Solidi(C),2008,5(2):573-576.
[13]Wagener M C,Wagener V,Botha J R,et al.Growth Temperature Dependence of the Background Doping in MOVPE-grown In As[J].Journal of Crystal Growth,2012,340(1):13-17.
[14]Pal S,Sathe V G,Rajrv K,et al.Effect of Surface Morphology on the Optical Properties of In As/Ge(111)[J].Applied Surface Science,2016,372:70-78.
[15]Jha S,Song X,Babcock S E,et al.Growth of In As on Si Substrates at Low Temperatures Using Metalorganic Vapor Phase Epitaxy[J].Journal of Crystal Growth,2008,310(23):4772-4775.
[16]Robson M T,Lapierrerr.In As Nanowire Growth Modes on Si(111)by Gas Source Molecular Beam Epitaxy[J].Journal of Crystal Growth,2016,436:1-11.
[17]Zhao H,Malko A,Lai Z H,et al.Effect of Bismuth on Structural and Electrical Properties of In As Films Grown on Ga As Substrates by MBE[J].Journal of Crystal Growth,2015,425:89-93.
[18]王继红,罗子江,周勋,等.In As薄膜的分子束外延生长与表面形貌及表面重构分析[J].材料导报B:研究篇,2013,27(2):90-92.
[19]Deng H Y,Wang Q W,Wu J,et al.Thickness and Mosaic Morphology of In As Films Grown by LPE Supercooling Technique[J].Mater Electron,2011,22(7):811-814.
[20]Caroff P,Jeppsson M,Wheeler D,et al.In As Film Grown on Si(111)by Metal Organic Vapor Phase Epitaxy[J].Journal of Physics,2008,100(4):042017.
[21]Hong K J,Jeong T S,Youn C J,et al.Growth of Ba In2S4Layers Through the Hot-wall-epitaxy Method and Their Electric/Optical Properties[J].Journal of Crystal Growth,2016,433:13-18.
[22]Takagaki Y,Jenicuhen B,Jahn U,et al.Hot Wall Epitaxy of Sb2Te3Layers:Coherent Hetero-epitaxy on In As(111)and Sb Substitution in Cumediated Growth[J].Semiconductor Science and Technology,2013,28(2):25012.
[23]Yang Y,Chen H,Li D,et al.The Growth of Pb Te on H-terminated Si(111)Substrate by Hot Wall Epitaxy[J].Infrared Physics&Technology,2003,44(4):299-301.
[24]Fang S F,Adomi K,Lyer S,et al.Gallium Arsenide and Other Compound Semiconductors on Silicon[J].Journal of Applied Physics,1990,68(7):31-58.
[25]Copel M,Reuter M C,Kaxiras E,et al.Surfactants in Epitaxial Growth[J].Physical Review Letters,1989,63(6):632-635.
[26]Wang X J,Chang Y,Becker C R,et al.Microstructure of Heteroepitaxial Zn Te Grown by Molecular Beam Epitaxy on Si(211)Substrates[J].Journal of Electronic Materials,2011,40(8):1860-1866.