InAs/GaSb超晶格中波红外二极管的阳极硫化
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  • 英文篇名:Anode Sulphur Passivation of InAs/GaSb Superlattice Infrared Photodiodes
  • 作者:郭杰 ; 郝瑞亭 ; 段剑金 ; 许林 ; 李银柱
  • 英文作者:GUO Jie;HAO Rui-ting;DUAN Jian-jin;XU Lin;LI Yin-zhu;Yunnan Observatories,Chinese Academy of Sciences;Physics and Electronic Information School,Yunnan Normal University;
  • 关键词:红外探测器 ; 钝化 ; 电流电压特性 ; InAs/GaSb ; 超晶格 ; 表面漏电 ; 阳极硫化
  • 英文关键词:Infrared detector;;Passivation;;Current-voltage characteristic;;InAs/GaSb;;Superlattices;;Surface leakage current;;Anode sulfur
  • 中文刊名:GZXB
  • 英文刊名:Acta Photonica Sinica
  • 机构:中国科学院云南天文台;云南师范大学物理与电子信息学院;
  • 出版日期:2014-01-15
  • 出版单位:光子学报
  • 年:2014
  • 期:v.43
  • 基金:国家自然科学基金(Nos.61274137,61176127);; 云南省自然科学基金(No.2011FZ078)资助
  • 语种:中文;
  • 页:GZXB201401012
  • 页数:4
  • CN:01
  • ISSN:61-1235/O4
  • 分类号:64-67
摘要
采用分子束外延技术,在GaSb衬底上生长了pin结构的InAs(8ML)/GaSb(8ML)超晶格中波红外光电二极管.用阳极硫化和ZnS薄膜对二极管表面进行钝化处理后,二极管漏电流密度降低了三个数量级,零偏阻抗R0达到106Ω,R0A达到103Ωcm2.通过测量电流密度与光敏元周长面积比的关系可知表面漏电不是主要漏电成分;电容电压特性曲线表明吸收层i层背景掺杂浓度约4~5×1014cm-3.在空气中放置一个月后再次测试,发现响应率和探测率几乎没有变化.与化学硫化和SiO2薄膜钝化方法相比,阳极硫化方法是一种更简单和有效的钝化方法.
        InAs(8ML)/GaSb(8ML)superlattice with p-i-n structure was grown on GaSb substrates by molecular beam epitaxy.The mid-wavelength infrared photodiodes with different area mesa was fabricated through standard photolithography,wet chemical etching and sputtered metal contacts.The passivation was finished by the anode sulphur technique and sputtered ZnS thin film.Compared with(NH4)2S solution treatment,the surface leackage currents density decreased three orders of magnitude and the R0Aincreased up to 103 times.The zero-bias resistance R0was measured up to 106 ohms.The surface leakage current was not major dark current in photodiodes after the anode sulfur passivation.Capacitance-voltage relation showed that the background concentration in i layer was about 4~5×1014 cm-3.The property of the photodiode appeared no degradation after exposured in air for one month.It verified that anode sulphur passivation is an easy and effective technique.
引文
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