生长厚度对InGaAs/InAs薄膜表面形貌的影响
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摘要
利用分子束外延技术,通过反射式高能电子衍射仪实时监控In0.86Ga0.14As/InAs薄膜生长状况,在InAs(001)基片上生长5、10、20原子单层(ML)厚度的InGaAs单晶薄膜。采用扫描隧道显微镜对原位退火后不同厚度的In0.86Ga0.14As样品进行扫描,证实了在同一组分下,薄膜生长厚度的改变并不剧烈影响薄膜的重构,然而,随着生长厚度的增加,外延层的表面拉伸应力进一步增大,平台平均尺寸逐渐减小,表面应力的累积使表面台阶数目逐渐增多,台面产生更多扭折,原子在具有各向异性的择优扩散机制与表面应力的共同作用下,In0.86Ga0.14As/InAs薄膜锯齿状的台阶边缘越明显,表面越粗糙化。
The growth of In0.86 Ga0.14 As thin films by molecular beam epitaxiy(MBE)on InAs substrate was in-situ annealed and monitored with reflection high energy diffraction(RHEED).The influence of the growth conditions,the film thickness in particular,on the atomic structures of the film surfaceswas characterizedwith scanning tunnelingmicroscopy(STM).The results show thatwhile slightly affecting the surface reconstruction,the thickness has a major impact on the microstructures and mechanical properties of the film surface.For example,as the thickness increased,the tensile inside the epitaxial layerincreased,but the average size of terrace decreased.Moreover,an increased number of steps with sharp irregular zigzag edgeswere observed,possibly because of accumulation of surface tensile and anisotropic preferred diffusion mechanisms.
The growth of In0.86 Ga0.14 As thin films by molecular beam epitaxiy(MBE)on InAs substrate was in-situ annealed and monitored with reflection high energy diffraction(RHEED).The influence of the growth conditions,the film thickness in particular,on the atomic structures of the film surfaceswas characterizedwith scanning tunnelingmicroscopy(STM).The results show thatwhile slightly affecting the surface reconstruction,the thickness has a major impact on the microstructures and mechanical properties of the film surface.For example,as the thickness increased,the tensile inside the epitaxial layerincreased,but the average size of terrace decreased.Moreover,an increased number of steps with sharp irregular zigzag edgeswere observed,possibly because of accumulation of surface tensile and anisotropic preferred diffusion mechanisms.
引文
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[2]许振嘉.近代半导体材料的表面科学基础[M].北京:北京大学出版社,2004:726
[3]Aierken A,Hakkarainen T,Tiilikainen J.Growth and Surface Passivation of Near Surface InGaAs Quantum Wells on GaAs(110)[J].Journal of Crystal Growth,2007,309:18
[4]周勋,杨再荣,罗子江,等.反射式高能电子衍射实时监控的分子束外延生长GaAs晶体衬底温度校准及表面相变的研究[J].物理学报,2011,60:016109
[5]罗子江,周勋,贺业全,等.RHEED实时监控下MBE生长不同In组分的InGaAs薄膜[J].功能材料,2011,42:2017
[6]罗子江,周勋,杨再荣,等.InGaAs/InAs异质薄膜的MBE生长研究[J].功能材料,2011,42:846
[7]尚林涛,罗子江,周勋,等.InGaAs/GaAs(4×3)表面的RHEED及STM分析[J].真空科学与技术学报,2012,32:256
[8]Dunstan D J,Halsall M P,Lancefield D,et al.Growth and Characterization of Relaxed Epilayers of InGaAs on GaAs[J].Journal of Crystal Growth,1993,126:589
[9]Willardson RK,Beer A C.Physics of III-V Compounds[M].New York:Academic Press,1970:20
[10]Matthews J W,Blakeslee A E.Defects in Epitaxial Multilayers:I.Misfit Dislocations[J].Journal of Crystal Growth,1974,27:118
[11]Fritz I J,Picraux S T,Dawson L R,et al.Anderson Dependence of Critical LayerThickness on Strain for InxGa1-xAs/GaAs Strained-Layer Superlattices[J].Applied Physics Letters,1985,46:967
[12]Vurgaftman I,Meyer J R.Band Parameters for III-V Compound Semiconductors and Their Alloys[J].Applied Physics Review,2001,89:5815
[13]Zhang Bi-Chan,Zhou Xun,Luo Zi-Jiang,et al.Step Instability of the In0.2Ga0.8As(001)Surface During Annealing[J].Chinese Physics,2012,B21:048101