Zn掺杂InSb薄膜的电特性
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摘要
研究了Zn掺杂InSb蒸镀薄膜杂质浓度和热处理条件对其电性能的影响。InSb薄膜采用三温度法在云母基片上制备,利用蒸镀Zn扩散后进行区熔再结晶的方法掺杂Zn杂质。在进行区熔再结晶时为了防止InSb分解和Sb的蒸发,用磁控溅射方法在InSb薄膜上生长厚度为300 nm的Si O2。测试结果表明最好的热处理条件为Ar气氛温度200℃、熔融区的移动速度1×10-5m·s~(-1)和熔融区通过数3。Zn成为受主,室温下测量Zn掺杂浓度为1.47×1022m-3的InSb薄膜的电子迁移率为5.65 m2·V-1·s~(-1)。Zn的掺杂浓度大于1.47×1022m-3时电子迁移率急剧减少,最大的霍尔常数为385 cm3·C-1。在1.5 T磁场下Zn掺杂浓度为3.16×1022m-3时,InSb薄膜电阻率的相对变化达到最大值为3.63,是未掺杂薄膜的2.46倍。
The effect of Zn dopant concentration and various heat treatment conditions on the electrical characteristic of InSb evaporated thin film doped with zinc was studied. InSb thin film was deposited on the mica substrate by 3-temperature method and Zn was doped by evaporation,diffusion and zone melting recrystallization. Si O2 of thickness of 300 nm was deposited on the InSb thin film by magnetic sputtering to prevent the decomposition of InSb and re-evaporation of Sb during recrystallization. The fact that Ar atmosphere temperature of 200 ℃,the moving speed of molten zone of 1 × 10-5m·s~(-1)and the number of pass of molten zone of 3 were the optimum heat treatment conditions was clear from the measurement results. Zn was an acceptor. The electron mobility of InSb thin film,Zn dopant concentration of which was 1. 47 × 1022m-3,measured at room temperature was 5. 65 m~2·V~(-1)·s~(-1). If the Zn concentration was larger than 1. 47 × 1022cm~(-3),the electron mobility rapidly decreased and the greatest Hall coefficient was 385 cm~3·C~(-1). Under the magnetic field of 1. 5 T,the maximum relative variation of resistivity of InSb thin film with Zn dopant concentration of 3. 16 × 1022m~(-3) was 3. 63 and this value was 2. 46 times that of non-doped thin film.
The effect of Zn dopant concentration and various heat treatment conditions on the electrical characteristic of InSb evaporated thin film doped with zinc was studied. InSb thin film was deposited on the mica substrate by 3-temperature method and Zn was doped by evaporation,diffusion and zone melting recrystallization. Si O2 of thickness of 300 nm was deposited on the InSb thin film by magnetic sputtering to prevent the decomposition of InSb and re-evaporation of Sb during recrystallization. The fact that Ar atmosphere temperature of 200 ℃,the moving speed of molten zone of 1 × 10-5m·s~(-1)and the number of pass of molten zone of 3 were the optimum heat treatment conditions was clear from the measurement results. Zn was an acceptor. The electron mobility of InSb thin film,Zn dopant concentration of which was 1. 47 × 1022m-3,measured at room temperature was 5. 65 m~2·V~(-1)·s~(-1). If the Zn concentration was larger than 1. 47 × 1022cm~(-3),the electron mobility rapidly decreased and the greatest Hall coefficient was 385 cm~3·C~(-1). Under the magnetic field of 1. 5 T,the maximum relative variation of resistivity of InSb thin film with Zn dopant concentration of 3. 16 × 1022m~(-3) was 3. 63 and this value was 2. 46 times that of non-doped thin film.
引文
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[19]Li H Y,Du H Y,Zhao J Z.Study on In Sb ion implantation annealing technology[J].Laser&Infrared,2013,43(12):1372.(李海燕,杜红艳,赵建忠.锑化铟离子注入退火技术研究[J].激光与红外,2013,43(12):1372.)
[20]Sun C S,Wei Y G,Guan Y X,Zhou L J,Wen Z X.The technique probe of In Sb film by RF sputtering[J].Instrument Technique and Sensor,2001,8:33.(孙承松,魏永广,关艳霞,周立军,温作晓.溅射法制备In Sb薄膜工艺探索—In的氧化及热处理保护[J].仪表技术与传感器,2001,8:33.)
[21]Li D Y,Li H T,Sun H H,Zhao LC.Effects of rapid thermal annealing on the morphology and optical property of ultrathin In Sb film deposited on Si O2/Si substrate[J].Chinese Physics B,2013,22(2):027802-1.
[22]Boguslavskii A A,Sazonov V V,Sokolov S M,Zemskov V S,Raukhman M R,Shalimov V P.Influence of microaccelerations on the impurity distribution in the In Sb:Te crystals grown in orbital flights by the method of floating zone melting[J].Cosmic Research,2004,42(2):148.
[23]Wang J A,Liu E W,Zhang Z Q,Lu B,He Y.Recrystallization texture and properties of Ni-Cu-W alloy tape[J].Chinese Journal of Rare Metals,2016,40(3):221.(王均安,刘二微,张植权,鲁波,贺英.NiCu-W合金薄带的再结晶织构与性能研究[J].稀有金属,2016,40(3):221).
[2]Senthilkumar V,Venkatachalam S,Viswanathan C,Gopal S,Narayandass S K,Mangalaraj D,Wilson K C,Vijayakumar K P.Influence of substrate temperature on the properties of vacuum evaporated In Sb films[J].Crystal Research Technology,2005,40(6):573.
[3]Oszwaldowski M,Berus T,Borowska A,Czajka R,Zimniak M.Growth of In Sb thin films on Ga As(100)substrates by flash evaporation epitaxy[J].Physica Status Solidi(C),2004,1(2):351.
[4]Farag A A M,Terra F S,Mahmoud G M,Mansour A M.Study of Gaussian distribution of inhomogeneous barrier height forn-In Sb/p-Ga As heterojunction prepared by flash evaporation[J].Journal of Alloys and Compounds,2009,481:427.
[5]Liu M,Cheng P,Xiao Y,She W L,Shang L T,Gong F,Zhou L Q.Research of In Sb film growth by molecular beam epitaxy[J].Laser&Infrared,2013,43(11):1256.(刘铭,程鹏,肖钰,佘伟林,尚林涛,巩锋,周立庆.In Sb薄膜分子束外延技术研究[J].激光与红外,2013,43(11):1256.)
[6]Zhou P,Liu M,Xing W R,Shang L T,Gong F.Analysis of defects on In Sb film grown by MBE[J].Laser&Infrared,2014,44(9):1007.(周朋,刘铭,邢伟荣,尚林涛,巩锋.分子束外延In Sb薄膜缺陷分析[J].激光与红外,2014,44(9):1007.)
[7]Yang Y W,Chen Y B,Wu Y C,Xie T,Liu F.Fabrication of In Sb/Sb superlattice nanowires array by pulsed electrodeposition[J].CIESC Journal,2011,62(3):870.(杨友文,陈延彪,吴玉程,解挺,刘飞.脉冲电沉积制备In Sb/Sb超晶格纳米线阵列[J].化工学报,2011,62(3):870.)
[8]Wen Z X,Sun C S,Wei Y G,Guan Y X,Zhou L J.The technological probe of In Sb film by RF putte-ring——The problem about atomic ratio of In to Sb[J].Instrument Technique and Sensor,2001,7:35.(温作晓,孙承松,魏永广,关艳霞,周立军.溅射法制备In Sb薄膜工艺探索——In与Sb的原子比问题[J].仪表技术与传感器,2001,7:35.)
[9]Gao Y X.Semiconductor Magnetoelectric Conversion Element[M].Beijing:China Machine Press,1985.36.(高永祥.半导体磁电转换元件[M].北京:机械工业出版社,1985.36.)
[10]Santos M B,Edirisooriya M,Mishima T D,Gaspe C K,Coker J,Doezema R E,Pan X,Sanders G D,Stanton C J,Tung L C,Wang Y J.Cyclotron resonance in Pdoped In Sb quantum wells[J].Physics Procedia,2010,3(2):1201.
[11]Berus T,Oszwaldowski M,Grabowski J.High quality Hall sensors made of heavily doped-In Sb epitaxial[J].Sensors and Actuators A,2004,116(1):75.
[12]Ivanov V A,Pashkova O N,Ugolkova E A,Sanygin V P,Galéra R M.Cluster ferromagnetism in Mn-doped In Sb[J].Inorganic Materials,2008,44(10):1041.
[13]Petrzhik E A,Darinskaya E V,Erofeeva S A,Raukhman M R.Effects of doping and preliminary processing on the magnetically stimulated mobility of dislocations in In Sb single crystals[J].Physics of the Solid State,2003,45(2):266.
[14]Zhang H Y,Xing H Z,Zhang L.The effect of Ga/N co-doping on electronic structure of In Sb[J].J.Infrared Millim Waves,2012,31(3):231.(张会媛,邢怀中,张蕾.Ga/N共掺杂对In Sb电子结构的影响[J].红外与毫米波学报,2012,31(3):231.)
[15]Pike N A,Stroud D.Model for the spin-dependent seebeck coefficient of In Sb in a magnetic field[J].Physical Review B,2014,90:174435-1.
[16]Kasap M,Acar S.The temperature dependence of electronand magneto transport properties in Te-doped In Sb[J].Physica Status Solidi(A),2004,201(14):3113.
[17]Goc J,Oszwaldowski M,Szweycer H.Doping of In Sb thin films with elements of groups II and VI[J].Thin Solid Films,1986,142(2):227.
[18]Ostrogorsky A G,Marin C,Volz M,Duffar T.Initial transient in Zn-doped In Sb grown in microgravity[J].Journal of Crystal Growth,2009,311(12):3243.
[19]Li H Y,Du H Y,Zhao J Z.Study on In Sb ion implantation annealing technology[J].Laser&Infrared,2013,43(12):1372.(李海燕,杜红艳,赵建忠.锑化铟离子注入退火技术研究[J].激光与红外,2013,43(12):1372.)
[20]Sun C S,Wei Y G,Guan Y X,Zhou L J,Wen Z X.The technique probe of In Sb film by RF sputtering[J].Instrument Technique and Sensor,2001,8:33.(孙承松,魏永广,关艳霞,周立军,温作晓.溅射法制备In Sb薄膜工艺探索—In的氧化及热处理保护[J].仪表技术与传感器,2001,8:33.)
[21]Li D Y,Li H T,Sun H H,Zhao LC.Effects of rapid thermal annealing on the morphology and optical property of ultrathin In Sb film deposited on Si O2/Si substrate[J].Chinese Physics B,2013,22(2):027802-1.
[22]Boguslavskii A A,Sazonov V V,Sokolov S M,Zemskov V S,Raukhman M R,Shalimov V P.Influence of microaccelerations on the impurity distribution in the In Sb:Te crystals grown in orbital flights by the method of floating zone melting[J].Cosmic Research,2004,42(2):148.
[23]Wang J A,Liu E W,Zhang Z Q,Lu B,He Y.Recrystallization texture and properties of Ni-Cu-W alloy tape[J].Chinese Journal of Rare Metals,2016,40(3):221.(王均安,刘二微,张植权,鲁波,贺英.NiCu-W合金薄带的再结晶织构与性能研究[J].稀有金属,2016,40(3):221).