非晶态InSb薄膜的光学非线性特性及其超分辨效应
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摘要
用磁控溅射法制备了K9基片/非晶态InSb/ZnS-SiO2样品。利用椭圆偏振光谱仪对非晶态InSb薄膜的光学常数进行了测量,利用傅里叶变换红外光谱仪得到光学带隙为0.26eV。采用改进的Z-扫描装置对405nm波长的非线性吸收和非线性折射进行了测量。结果表明非晶态InSb薄膜表现出饱和吸收和自聚焦特性,有效非线性吸收系数为-3.73×10-2 m/W,非线性折射率为6.64×10-9 m2/W。根据非线性吸收系数,计算了非线性吸收截面的面积,与相关文献的报道非常接近。基于对非晶态InSb薄膜在405nm波长的变温椭偏测试,讨论了热效应对非线性的贡献。分析表明非线性饱和吸收特性主要来源于纳秒脉冲激光作用下的热效应,而非线性折射特性是电子受激跃迁过程导致的。对饱和吸收特性诱导的超分辨效应进行了模拟,结果表明InSb薄膜的非线性吸收特性可以有效减小透射光斑的大小。
Samples of amorphous-InSb/ZnS-SiO2 structure are deposited on K9 glass substrate with magnetron sputtering method in this study.Optical constants of amorphous InSb thin films are measured by a spectroscopic ellipsometer.The optical band gap is determined to be 0.26 eV by Fourier transform infrared spectroscopy.The nonlinear absorption and nonlinear refraction of the amorphous InSb thin films are measured through well-established Z-scan method at the wavelength of 405 nm.Results show that the amorphous InSb thin films show the characteristics of saturable absorption and self-focusing,the nonlinear absorption coefficient is-3.73×10-2 m/W,and the nonlinear refractive index is 6.64×10-9 m2/W.Based on the nonlinear absorption coefficient,the nonlinear absorption cross section is calculated,which is very close to the reported value of related literature.The thermo-optical effect is investigated by variable temperature ellipsometry method at the wavelength of 405 nm.Analysis indicates that the nonlinear saturable absorption mainly stems from nanosecond laser-induced thermal effect,whereas the selffocusing refraction mainly results from electronic nonlinearity,respectively.The super-resolution effect induced by the saturable absorption characteristic is simulated,and the results show that the nonlinear absorption effect of the amorphous InSb thin films can effectively reduce the size of the transmission spot.
Samples of amorphous-InSb/ZnS-SiO2 structure are deposited on K9 glass substrate with magnetron sputtering method in this study.Optical constants of amorphous InSb thin films are measured by a spectroscopic ellipsometer.The optical band gap is determined to be 0.26 eV by Fourier transform infrared spectroscopy.The nonlinear absorption and nonlinear refraction of the amorphous InSb thin films are measured through well-established Z-scan method at the wavelength of 405 nm.Results show that the amorphous InSb thin films show the characteristics of saturable absorption and self-focusing,the nonlinear absorption coefficient is-3.73×10-2 m/W,and the nonlinear refractive index is 6.64×10-9 m2/W.Based on the nonlinear absorption coefficient,the nonlinear absorption cross section is calculated,which is very close to the reported value of related literature.The thermo-optical effect is investigated by variable temperature ellipsometry method at the wavelength of 405 nm.Analysis indicates that the nonlinear saturable absorption mainly stems from nanosecond laser-induced thermal effect,whereas the selffocusing refraction mainly results from electronic nonlinearity,respectively.The super-resolution effect induced by the saturable absorption characteristic is simulated,and the results show that the nonlinear absorption effect of the amorphous InSb thin films can effectively reduce the size of the transmission spot.
引文
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24 JS Wei.On the dynamic readout characteristic of nonlinear super-resolution optical storage[J].Opt Commun,2013,291:143-149.
2 Gan Fuxi,Wang Yang.Breaking through the optical diffraction limits,developing the nano-optics and photonics[J].Acta Optica Sinica,2011,31(9):0900104.干福熹,王阳.突破光学衍射极限,发展纳米光学和光子学[J].光学学报,2011,31(9):0900104.
3 K Nakai,M Ohmaki,N Takeshita,et al..First playback of high-definition video contents from super-resolution near-field structure optical disc[J].Jpn J Appl Phys,2010,49(8):08 KE02.
4 BHyot,S Olivier,M F Armand,et al..High capacity super RENS-ROM disc with InSb active layer[C].Proc of E*PCOS09,2009.
5 B Hyot,X Biquard,F Laulagnet.Super-resolution ROM disc with a semi-conductive InSb active layer[C].Proc of E*PCOS07,2007.
6 SOhkubo,K Aoki,D Eto.Temperature dependence of optical constants for InSb films including molten phases[J].Appl Phys Lett,2008,92(1):011919.
7 AC Assafrao,A J H Wachters,M Verheijen,et al..Direct measurement of the near-field super resolved focused spot in InSb[J].Opt Express,2012,20(9):10426-10437.
8 Xinmiao Lu,Yiqun Wu,Yang Wang,et al..Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures[J].Chin Opt Lett,2011,9(10):102101.
9 M Sheik-Bahae,A A Said,T H Wei,et al..Sensitive measurement of optical nonlinearities using a single beam[J].IEEE J Quantum Electron,1990,26(4):760-769.
10 D E Aspnes,A A Studna.Dielectric functions and optical parameters of Si,Ge,GaP,GaAs,GaSb,InP,InAs,and InSb from 1.5to 6.0eV[J].Phys Rev B,1983,27(2):985-1009.
11 Lu Xinmiao,Jiang Laixin,Wu Yiqun,et al..Dependence of optical constants and optical band gap on thickness of antimonybased bismuth-doped film at near-infrared region[J].Acta Optica Sinica,2012,32(11):1131001.逯鑫淼,姜来新,吴谊群,等.近红外波段锑基铋掺杂薄膜厚度对光学常数与光学带隙的影响[J].光学学报,2012,32(11):1131001.
12 M Yüksek,U Kürüm,H G Yaglioglu,et al..Nonlinear and saturable absorption characteristics of amorphous InSe thin films[J].J Appl Phys,2010,107(3):033115.
13 JLiu,S Liu,J C Wei,et al..Origin of the giant optical nonlinearity of Sb2Te3 phase change materials[J].Appl Phys Lett,2010,97(26):261903.
14 T R Tsai,T H Wu,J C Liao,et al..Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z-scan measurements[J].J Appl Phys,2009,105(6):066101.
15 N Venkatram,R Sathyavathi,D N Rao.Size dependent multiphoton absorption and refraction of CdSe nanoparticles[J].Opt Express,2007,15(19):12258-12263.
16 R L Sutherland.Handbook of Nonlinear Optics[M].New York:Marcel Dekker,2003.
17 E Garmire,A Kost.Nonlinear Optics in Semiconductors II:Semiconductors and Semimetals[M].San Diego:Academic Press,1999.
18 S Liu,J S Wei,F X Gan.Optical nonlinear absorption characteristics of crystalline Ge2Sb2Te5thin films[J].J Appl Phys,2011,110(3):033503.
19 M Levinshtein,S Rumyantsev,M Shur.Handbook Series on Semiconductor Parameters[M].London:World Scientific,1995.
20 DN Christodoulides,I C Khoo,G J Salamo,et al..Nonlinear refraction and absorption:mechanisms and magnitudes[J].Adv Opt Photon,2010,2(1):60-200.
21 SLiu,J S Wei,F X Gan.Nonlinear absorption of Sb-based phase change materials due to the weakening of the resonant bond[J].Appl Phys Lett,2012,100(11):111903.
22 FZhang,Y Wang,W D Xun,et al..High-density read-only memory disc with Ag11In12Sb51Te26super-resolution mask layer[J].Chin Phys Lett,2004,21(10):1973-1975.
23 X Q Ma,J S Wei.Nanoscale lithography with visible light:optical nonlinear saturable absorption effect induced nanobump pattern structures[J].Nanoscale,2011,3(4):1489-1492.
24 JS Wei.On the dynamic readout characteristic of nonlinear super-resolution optical storage[J].Opt Commun,2013,291:143-149.