Improved interfacial properties of GaAs MOS capacitor with NH_3-plasma-treated ZnON as interfacial passivation layer
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摘要
The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH_3-plasma-treated ZnON as interfacial passivation layer(IPL), and its interfacial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH_3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap(1.17 ×10~(12) cm ~(-2)e V~(-1)/and small gate leakage current density have been achieved for the Ga As MOS device with the stacked gate dielectric of HfTi ON/ZnON plus NH_3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH_3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH_3-plasma-treated ZnON as interfacial passivation layer(IPL), and its interfacial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH_3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap(1.17 ×10~(12) cm ~(-2)e V~(-1)/and small gate leakage current density have been achieved for the Ga As MOS device with the stacked gate dielectric of HfTi ON/ZnON plus NH_3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH_3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
The GaAs MOS capacitor was fabricated with HfTiON as high-k gate dielectric and NH_3-plasma-treated ZnON as interfacial passivation layer(IPL), and its interfacial and electrical properties are investigated compared to its counterparts with ZnON IPL but no NH_3-plasma treatment and without ZnON IPL and no plasma treatment. Experimental results show that low interface-state density near midgap(1.17 ×10~(12) cm ~(-2)e V~(-1)/and small gate leakage current density have been achieved for the Ga As MOS device with the stacked gate dielectric of HfTi ON/ZnON plus NH_3-plasma treatment. These improvements could be ascribed to the fact that the ZnON IPL can effectively block in-diffusion of oxygen atoms and out-diffusion of Ga and As atoms, and the NH_3-plasma treatment can provide not only N atoms but also H atoms and NH radicals, which is greatly beneficial to removal of defective Ga/As oxides and As-As band, giving a high-quality ZnON/GaAs interface.
引文
[1]He G,Chen X,Sun Z.Interface engineering and chemistry of Hfbased high-k dielectrics on III-V substrates.Surf Sci Rep,2013,68(1):68
[2]Suzuki R,Taoka N,Yokoyama M,et al.1-nm-capacitanceequivalent-thickness Hf O2/Al2O3/In Ga As metal-oxidesemiconductor structure with low interface trap density and low gate leakage current density.Appl Phys Lett,2012,100(13):132906
[3]Das P S,Biswas A.Investigations on electrical characteristics and reliability properties of MOS capacitors using Hf Al Ox on n-Ga As substrates.Microelectron Reliab,2012,52(1):112
[4]Kundu S,Roy S,Banerji P,et al.Studies on Al/Zr O2/Ga As metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 k Hz-1 MHz.J Vac Sci Technol B,2011,29(3):1203
[5]Ji F,Xu J P,Liu J G,et al.Improved interface properties of Ge metal-oxide-semiconductor capacitor with Ta Ti O gate dielectric by using in situ Ta ON passivation interlayer.Appl Phys Lett,2011,98(18):182901
[6]Passlack M,Medendorp N,Gregory R,et al.Role of Ga2O3 template thickness and gadolinium mole fraction in Gdx Ga0:4 xO0:6/Ga2O3 gate dielectric stacks on Ga As.Appl Phys Lett,2003,83(25):5262
[7]Wang L S,Xu J P,Zhu S Y,et al.Improved interfacial and electrical properties of Ga As metal-oxide-semiconductor capacitors with Hf Ti ON as gate dielectric and Ta ON as passivation interlayer.Appl Phys Lett,2013,103(9):112901
[8]Shahrjerdi D,Oye M M,Holmes A L Jr,et al.Unpinned metal gate/high-k Ga As capacitors:fabrication and characterization.Appl Phys Lett,2006,89(4):49
[9]Liu C,Zhang Y M,Zhang Y M,et al.Interfacial characteristics of Al/Al2O3/Zn O/n-Ga As MOS capacitor.Chin Phys B,2013,22(7):406
[10]Kundu S,Shripathi T,Banerji P.Interface engineering with an MOCVD grown Zn O interface passivation layer for Zr O2-Ga As metal-oxide-semiconductor devices.Solid State Commun,2011,151(24):1881
[11]Lee S,Nathan A,Ye Y,et al.Localized tail states and electron mobility in amorphous Zn ON thin film transistors.Sci Rep,2015,5:13467
[12]Ghosh C K,Malkhandi S,Mitra M K,et al.Effect of Ni doping on the dielectric constant of Zn O and its frequency dependent exchange interaction.J Phys D,2008,41(41):245113
[13]Lu H,Xu J P,Liu L,et al.Improved interfacial quality of Ga As metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer.Microelectron Reliab,2016,56:17
[14]Yasui K,Arayama T,Okutani S,et al.Generation of ammonia plasma using a helical antenna and nitridation of Ga As surface.Appl Surf Sci,2003,212(2):619
[15]O’Connor E,Djara V,Monaghan S,et al.Capacitance-voltage and interface state density characteristics of Ga As and In Ga As MOS capacitors incorporating a PECVD Si N dielectric.ESTrans,2011,415:35
[16]Losurdo M,Capezzuto P,Bruno G,et al.N2-H2 remote plasma nitridation for Ga As surface passivation.Appl Phys Lett,2002,81(1):16
[17]Frank M M,Wilk G D,Starodub D,et al.Hf O2 and Al2O3 gate dielectrics on Ga As grown by atomic layer deposition.Appl Phys Lett,2005,86(15):87
[18]Lu H L,Sun L,Ding S J,et al.Characterization of atomic-layerdeposited Al2O3/Ga As interface improved by NH3 plasma pretreatment.Appl Phys Lett,2006,89(15):1897
[19]Yang T,Xuan Y,Zemlyanov D,et al.Interface studies of Ga As metal-oxide-semiconductor structures using atomiclayer-deposited Hf O2/Al2O3 nanolaminate gate dielectric.Appl Phys Lett,2007,91(14):1099
[20]Wang L S,Xu J P,Liu L,et al.Plasma-nitrided Ga2O3(Gd2O3/as interfacial passivation layer for In Ga As metal-oxidesemiconductor capacitor with Hf Ti ON gate dielectric.IEEETrans Electron Devices,2015,62(4):1235
[21]Terman L M.An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes.Solid State Electron,1962,5:285
[22]Li C C,Chang-Liao K S,Fu C H,et al.Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition.Microelectron Eng,2013,109(6):64
[23]Dasa T,Mahata C,Sutradharb G,et al.Characterization of Tibased high-k gate dielectrics on Ga As.ECS Trans,2011 35:325
[24]Crupi F,Ciofi C,GermanòA,et al.On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures.Appl Phys Lett,2002,80(24):4597
[25]Xu H X,Xu J P.Electrical properties of Ge metal-oxidesemiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti.J Semicond,2016,37(6):77
[26]Wang L S,Liu L,Xu J P,et al.Electrical properties of Hf Ti ONgate-dielectric Ga As metal-oxide-semiconductor capacitor with Al ON as interlayer.IEEE Trans Electron Devices,2014,61:1
[27]Lee S,Nathan A,Ye Y,et al.Localized tail states and electron mobility in amorphous Zn ON thin film transistors.Sci Rep,2015,5:13467
[28]Gonbeau D,Guimon C,Pfister-Guillouzo G,et al.XPS study of thin films of titanium oxysulfides.Surf Sci,1991,254(1-3):81
[29]Flina B J Mc Intyre N S.Studies of the UV/ozone oxidation of Ga As using angle-resolved X-ray photoelectron spectroscopy.Surf Interface Anal,1990,15:19
[30]Sugahara H,Oshima M,Oigawa H,et al.Synchrotron radiation photoemission analysis for(NH4)2Sx-treated Ga As.J Appl Phys,1991,69(8):4349
[31]Liu C W,Xu J P,Liu L,et al.High-gate dielectric Ga As MOSdevice with La ON as interlayer and NH-plasma surface pretreatment.Chin Phys B,2015,24:494
[32]Ould-Metidji Y,Bideux L,Baca D,et al.Nitridation of Ga As(100)substrates and Ga/Ga As systems studied by XPSspectroscopy.Appl Surf Sci,2003,212(2):614
[33]Zhu S Y,Xu J P,Wang L S,et al.Comparison of interfacial and electrical properties between Al2O3 and Zn O as interface passivation layer of Ga As MOS device with Hf Ti O gate dielectric.JSemicond,2015,36(3):74
[34]Wu Y C,Chang E Y,Lin Y C,et al.Study of the inversion behaviors of Al2O3/Inx Ga1 xAs metal-oxide-semiconductor capacitors with different In contents.Solid State Electron,2010,54(1):37
[35]Yan T,Zhang Y M,LüH L,et al.Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of Hf O2 films in p-Ga As metal-oxidesemiconductor capacitors.J Semicond,2015,36(12):124003
[36]Pal S,Bose D N.Fabrication and characterization of Ga As MISdevices with N-rich PEVCD Si N dielectric.Appl Surf Sci,2001,181:179
[37]Marchiori C,Webb D J,Rossel C,et al.H plasma cleaning and a-Si passivation of Ga As for surface channel device applications.J Appl Phys,2009,106(11):1245
[2]Suzuki R,Taoka N,Yokoyama M,et al.1-nm-capacitanceequivalent-thickness Hf O2/Al2O3/In Ga As metal-oxidesemiconductor structure with low interface trap density and low gate leakage current density.Appl Phys Lett,2012,100(13):132906
[3]Das P S,Biswas A.Investigations on electrical characteristics and reliability properties of MOS capacitors using Hf Al Ox on n-Ga As substrates.Microelectron Reliab,2012,52(1):112
[4]Kundu S,Roy S,Banerji P,et al.Studies on Al/Zr O2/Ga As metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 k Hz-1 MHz.J Vac Sci Technol B,2011,29(3):1203
[5]Ji F,Xu J P,Liu J G,et al.Improved interface properties of Ge metal-oxide-semiconductor capacitor with Ta Ti O gate dielectric by using in situ Ta ON passivation interlayer.Appl Phys Lett,2011,98(18):182901
[6]Passlack M,Medendorp N,Gregory R,et al.Role of Ga2O3 template thickness and gadolinium mole fraction in Gdx Ga0:4 xO0:6/Ga2O3 gate dielectric stacks on Ga As.Appl Phys Lett,2003,83(25):5262
[7]Wang L S,Xu J P,Zhu S Y,et al.Improved interfacial and electrical properties of Ga As metal-oxide-semiconductor capacitors with Hf Ti ON as gate dielectric and Ta ON as passivation interlayer.Appl Phys Lett,2013,103(9):112901
[8]Shahrjerdi D,Oye M M,Holmes A L Jr,et al.Unpinned metal gate/high-k Ga As capacitors:fabrication and characterization.Appl Phys Lett,2006,89(4):49
[9]Liu C,Zhang Y M,Zhang Y M,et al.Interfacial characteristics of Al/Al2O3/Zn O/n-Ga As MOS capacitor.Chin Phys B,2013,22(7):406
[10]Kundu S,Shripathi T,Banerji P.Interface engineering with an MOCVD grown Zn O interface passivation layer for Zr O2-Ga As metal-oxide-semiconductor devices.Solid State Commun,2011,151(24):1881
[11]Lee S,Nathan A,Ye Y,et al.Localized tail states and electron mobility in amorphous Zn ON thin film transistors.Sci Rep,2015,5:13467
[12]Ghosh C K,Malkhandi S,Mitra M K,et al.Effect of Ni doping on the dielectric constant of Zn O and its frequency dependent exchange interaction.J Phys D,2008,41(41):245113
[13]Lu H,Xu J P,Liu L,et al.Improved interfacial quality of Ga As metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer.Microelectron Reliab,2016,56:17
[14]Yasui K,Arayama T,Okutani S,et al.Generation of ammonia plasma using a helical antenna and nitridation of Ga As surface.Appl Surf Sci,2003,212(2):619
[15]O’Connor E,Djara V,Monaghan S,et al.Capacitance-voltage and interface state density characteristics of Ga As and In Ga As MOS capacitors incorporating a PECVD Si N dielectric.ESTrans,2011,415:35
[16]Losurdo M,Capezzuto P,Bruno G,et al.N2-H2 remote plasma nitridation for Ga As surface passivation.Appl Phys Lett,2002,81(1):16
[17]Frank M M,Wilk G D,Starodub D,et al.Hf O2 and Al2O3 gate dielectrics on Ga As grown by atomic layer deposition.Appl Phys Lett,2005,86(15):87
[18]Lu H L,Sun L,Ding S J,et al.Characterization of atomic-layerdeposited Al2O3/Ga As interface improved by NH3 plasma pretreatment.Appl Phys Lett,2006,89(15):1897
[19]Yang T,Xuan Y,Zemlyanov D,et al.Interface studies of Ga As metal-oxide-semiconductor structures using atomiclayer-deposited Hf O2/Al2O3 nanolaminate gate dielectric.Appl Phys Lett,2007,91(14):1099
[20]Wang L S,Xu J P,Liu L,et al.Plasma-nitrided Ga2O3(Gd2O3/as interfacial passivation layer for In Ga As metal-oxidesemiconductor capacitor with Hf Ti ON gate dielectric.IEEETrans Electron Devices,2015,62(4):1235
[21]Terman L M.An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes.Solid State Electron,1962,5:285
[22]Li C C,Chang-Liao K S,Fu C H,et al.Improved electrical characteristics high-k gated MOS devices with in-situ remote plasma treatment in atomic layer deposition.Microelectron Eng,2013,109(6):64
[23]Dasa T,Mahata C,Sutradharb G,et al.Characterization of Tibased high-k gate dielectrics on Ga As.ECS Trans,2011 35:325
[24]Crupi F,Ciofi C,GermanòA,et al.On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures.Appl Phys Lett,2002,80(24):4597
[25]Xu H X,Xu J P.Electrical properties of Ge metal-oxidesemiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti.J Semicond,2016,37(6):77
[26]Wang L S,Liu L,Xu J P,et al.Electrical properties of Hf Ti ONgate-dielectric Ga As metal-oxide-semiconductor capacitor with Al ON as interlayer.IEEE Trans Electron Devices,2014,61:1
[27]Lee S,Nathan A,Ye Y,et al.Localized tail states and electron mobility in amorphous Zn ON thin film transistors.Sci Rep,2015,5:13467
[28]Gonbeau D,Guimon C,Pfister-Guillouzo G,et al.XPS study of thin films of titanium oxysulfides.Surf Sci,1991,254(1-3):81
[29]Flina B J Mc Intyre N S.Studies of the UV/ozone oxidation of Ga As using angle-resolved X-ray photoelectron spectroscopy.Surf Interface Anal,1990,15:19
[30]Sugahara H,Oshima M,Oigawa H,et al.Synchrotron radiation photoemission analysis for(NH4)2Sx-treated Ga As.J Appl Phys,1991,69(8):4349
[31]Liu C W,Xu J P,Liu L,et al.High-gate dielectric Ga As MOSdevice with La ON as interlayer and NH-plasma surface pretreatment.Chin Phys B,2015,24:494
[32]Ould-Metidji Y,Bideux L,Baca D,et al.Nitridation of Ga As(100)substrates and Ga/Ga As systems studied by XPSspectroscopy.Appl Surf Sci,2003,212(2):614
[33]Zhu S Y,Xu J P,Wang L S,et al.Comparison of interfacial and electrical properties between Al2O3 and Zn O as interface passivation layer of Ga As MOS device with Hf Ti O gate dielectric.JSemicond,2015,36(3):74
[34]Wu Y C,Chang E Y,Lin Y C,et al.Study of the inversion behaviors of Al2O3/Inx Ga1 xAs metal-oxide-semiconductor capacitors with different In contents.Solid State Electron,2010,54(1):37
[35]Yan T,Zhang Y M,LüH L,et al.Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of Hf O2 films in p-Ga As metal-oxidesemiconductor capacitors.J Semicond,2015,36(12):124003
[36]Pal S,Bose D N.Fabrication and characterization of Ga As MISdevices with N-rich PEVCD Si N dielectric.Appl Surf Sci,2001,181:179
[37]Marchiori C,Webb D J,Rossel C,et al.H plasma cleaning and a-Si passivation of Ga As for surface channel device applications.J Appl Phys,2009,106(11):1245