Facile Route to Control over the Morphological Evolution of β-Ga_2O_3 from Nanowires to Nanoflags and to Nanosheets
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摘要
We report the fabrication of β-Ga_2O_3 nanostructures on Au-coated(0001) sapphire substrate by chemical vapor deposition. The morphologies and structural properties of β-Ga_2O_3 nanostructures were characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Different morphologies including nanowire, nanoflag and nanosheet were controllably synthesized by adjusting the important growth parameters of ambient source contents. It is suggested that the relative ratio of oxygen and gallium contents plays a significant role in determining the morphologies of β-Ga_2O_3 nanostructure.
We report the fabrication of β-Ga_2O_3 nanostructures on Au-coated(0001) sapphire substrate by chemical vapor deposition. The morphologies and structural properties of β-Ga_2O_3 nanostructures were characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Different morphologies including nanowire, nanoflag and nanosheet were controllably synthesized by adjusting the important growth parameters of ambient source contents. It is suggested that the relative ratio of oxygen and gallium contents plays a significant role in determining the morphologies of β-Ga_2O_3 nanostructure.
We report the fabrication of β-Ga_2O_3 nanostructures on Au-coated(0001) sapphire substrate by chemical vapor deposition. The morphologies and structural properties of β-Ga_2O_3 nanostructures were characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. Different morphologies including nanowire, nanoflag and nanosheet were controllably synthesized by adjusting the important growth parameters of ambient source contents. It is suggested that the relative ratio of oxygen and gallium contents plays a significant role in determining the morphologies of β-Ga_2O_3 nanostructure.
引文
(1)Qian,Y.P.;Guo,D.Y.;Chu,X.L.;Shi,H.Z.;Zhu,W.K.;Wang,K.;Huang,X.K.;Wang,H.;Wang,S.L.;Li,P.G.Mg-doped p-typeβ-Ga2O3 thin film for solar-blind ultraviolet photodetector.Mater.Lett.2017,209,558-561.
(2)Lee,S.Y.;Choi,K.H.;Kang,H.C.Growth mechanism of In-dopedβ-Ga2O3 nanowires deposited by radio frequency powder sputtering.Mater.Lett.2016,176,213-218.
(3)Bj?rk,M.T.;Ohlsson,B.J.;Thelander,C.;Persson,A.I.;Deppert,K.;Wallenberg,L.R.;Samuelson,L.Nanowire resonant tunneling diodes.Appl.Phys.Lett.2002,81,4458-4460.
(4)Huang,Y.;Duan,X.;Cui,Y.;Lauhon,L.J.;Kim,K.H.;Lieber,C.M.Logic gates and computation from assembled nanowire building blocks.Science 2001,294,1313-1317.
(5)Man,H.W.;Sasaki,K.;Kuramata,A.;Yamakoshi,S.;Higashiwaki,M.Electron channel mobility in Si-doped Ga2O3 MOSFETs with a resistive buffer layer.Jpn.J.Appl.Phys.2016,55,1202B9-5.
(6)Kong,W.Y.;Wu,G.A.;Wang,K.Y.;Zhang,T.F.;Zou,Y.F.;Wang,D.D.;Luo,L.B.Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application.Adv.Mater.2016,28,10725-10731.
(7)Du,X.J.;Mi,W.;Luan,C.;Li,Z.;Xia,C.T.;Ma,J.Characterization of homoepitaxialβ-Ga2O3 films prepared by metal-organic chemical vapor deposition.J.Cryst.Growth 2014,404,75-79.
(8)Kang,B.K.;Mang,S.R.;Lim,H.D.;Song,K.M.;Song,Y.H.;Go,D.H.;Jung,M.K.;Senthil,K.;Yoon,D.H.Synthesis,morphology and optical properties of pure and Eu3+dopedβ-Ga2O3 hollow nanostructures by hydrothermal method.Mater.Chem.Phys.2014,147,178-183.
(9)Park,G.S.;Choi,W.B.;Kim,J.M.;Choi,Y C.;Lee,Y.H.;Lim,C.B.Structural investigation of gallium oxide(β-Ga2O3)nanowires grown by arc-discharge.J.Cryst.Growth 2000,220,494-500.
(10)Wang,X.H.;Zhang,F.B.;Saito,K.;Tanaka,T.;Nishio,M.;Guo,Q.X.Electrical properties and emission mechanisms of Zn-dopedβ-Ga2O3 films.J.Phys.Chem.Solids 2014,75,1201-1204.
(11)Peng,Y.;Yu,N.;Xiang,Y.;Liu,J.;Cao,L W.;Huang,S Y.One-step hydrothermal synthesis of nitrogen doped beta-Ga2O3 nanostructure and its optical properties.J.Nanosci.Nanotechno.2018,18,5654-5659.
(12)Zhuang,H.Z.;Zhang,S.Y.;Zhang,X.K.;Xue,C.S.;Li,B.L.;Wang,D.X.;Shen,J.B.Synthesis and characterization ofβ-Ga2O3 nanorods.Appl.Surf.Sci.2008,254,3057-3060.
(13)Khan,A.;Jadwisienczak,W.M.;Kordesch,M.E.One-step preparation of ultra-wideβ-Ga2O3 microbelts and their photoluminescence study.Physica.E 2006,35,207-211.
(14)Yang,G.;Jang,S.;Ren,F.;Pearton,S.J.;Kim,J.Influence of high-energy proton irradiation on?2-Ga2O3 nanobelt field-effect transistors.Acs.Appl.Mater.Inter.2017,9,40471-40476.
(15)Patil-Chaudhari,D.;Ombaba,M.;Jin,Y.O.;Mao,H.;Montgomery,K.H.;Lange,A.;Mahajan,S.;Woodall,J.M.;Islam,M.S.Solar blind photodetectors enabled by nanotextured beta-Ga2O3 films grown via oxidation of Ga As substrates.IEEE Photonics J.2017,9,2300207-7.
(16)Lin,H.J.;Gao,H.;Gao,P.X.UV-enhanced CO sensing using Ga2O3-based nanorod arrays at elevated temperature.Appl.Phys.Lett.2017,110,043101-5.
(17)Feng,W.;Wang,X.;Zhang,J.;Wang,L.;Zheng,W.;Hu,P.;Cao,W.;Yang,B.Synthesis of two-dimensionalβ-Ga2O3 nanosheets for high-performance solar blind photodetectors.J.Mater.Chem.C 2014,2,3254-3259.
(18)Shao,T.;Zhang,P.;Li,Z.;Jin,L.Photocatalytic decomposition of perfluorooctanoic acid in pure water and wastewater by needle-like nanostructured gallium oxide.Appl.Catal.B Environ.2013,142,654-661.
(19)Kwon,Y.;Lee,G.;Oh,S.;Kim,J.;Pearton,S.J.;Ren,F.Tuning the thickness of exfoliated quasi-two-dimensionalβ-Ga2O3 flakes by plasma etching.Appl.Phys.Lett.2017,110,131901-5.
(20)Feng,Q.;Liu,J.;Yang,Y.;Pan,D.;Xing,Y.;Shi,X.;Xia,X.;Liang,H.Catalytic growth and characterization of single crystalline Zn doped p-typeβ-Ga2O3 nanowires.J.Alloy.Compd.2016,687,964-968.
(21)Abdullah,Q.N.;Yam,F.K.;Mohmood,K.H.;Hassan,Z.;Qaeed,M.A.;Bououdina,M.;Almessiere,M.A.;Al-Otaibi,A.L.;Abdulateef,S.A.Free growth of one-dimensionalβ-Ga2O3 nanostructures including nanowires,nanobelts and nanosheets using a thermal evaporation method.Cera.Int.2016,42,13343-13349.
(22)Chen,C.;Yan,T.;Hsiang,W.;Chou,M.M.C.Morphological control over nonpolar Ga N nanostructures on(100)γ-LiAlO2 substrate.Mater.Lett.2014,130,271-273.
(23)Chen,C.;Chou,M.M.;Yan,T.;Huang,H.;Lu,C.Y.;Chen,C.The synthesis route and the growth mechanism of aligned Ga N nanobelts.Chem.Commun.2014,50,5695-5698.
(24)Hou,W.C.;Chen,L.Y.;Tang,W.C.;Hong,F.C.N.Control of seed detachment in Au-assisted Ga N nanowire growths.Cryst.Growth Des.2016,11,990-994.
(2)Lee,S.Y.;Choi,K.H.;Kang,H.C.Growth mechanism of In-dopedβ-Ga2O3 nanowires deposited by radio frequency powder sputtering.Mater.Lett.2016,176,213-218.
(3)Bj?rk,M.T.;Ohlsson,B.J.;Thelander,C.;Persson,A.I.;Deppert,K.;Wallenberg,L.R.;Samuelson,L.Nanowire resonant tunneling diodes.Appl.Phys.Lett.2002,81,4458-4460.
(4)Huang,Y.;Duan,X.;Cui,Y.;Lauhon,L.J.;Kim,K.H.;Lieber,C.M.Logic gates and computation from assembled nanowire building blocks.Science 2001,294,1313-1317.
(5)Man,H.W.;Sasaki,K.;Kuramata,A.;Yamakoshi,S.;Higashiwaki,M.Electron channel mobility in Si-doped Ga2O3 MOSFETs with a resistive buffer layer.Jpn.J.Appl.Phys.2016,55,1202B9-5.
(6)Kong,W.Y.;Wu,G.A.;Wang,K.Y.;Zhang,T.F.;Zou,Y.F.;Wang,D.D.;Luo,L.B.Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application.Adv.Mater.2016,28,10725-10731.
(7)Du,X.J.;Mi,W.;Luan,C.;Li,Z.;Xia,C.T.;Ma,J.Characterization of homoepitaxialβ-Ga2O3 films prepared by metal-organic chemical vapor deposition.J.Cryst.Growth 2014,404,75-79.
(8)Kang,B.K.;Mang,S.R.;Lim,H.D.;Song,K.M.;Song,Y.H.;Go,D.H.;Jung,M.K.;Senthil,K.;Yoon,D.H.Synthesis,morphology and optical properties of pure and Eu3+dopedβ-Ga2O3 hollow nanostructures by hydrothermal method.Mater.Chem.Phys.2014,147,178-183.
(9)Park,G.S.;Choi,W.B.;Kim,J.M.;Choi,Y C.;Lee,Y.H.;Lim,C.B.Structural investigation of gallium oxide(β-Ga2O3)nanowires grown by arc-discharge.J.Cryst.Growth 2000,220,494-500.
(10)Wang,X.H.;Zhang,F.B.;Saito,K.;Tanaka,T.;Nishio,M.;Guo,Q.X.Electrical properties and emission mechanisms of Zn-dopedβ-Ga2O3 films.J.Phys.Chem.Solids 2014,75,1201-1204.
(11)Peng,Y.;Yu,N.;Xiang,Y.;Liu,J.;Cao,L W.;Huang,S Y.One-step hydrothermal synthesis of nitrogen doped beta-Ga2O3 nanostructure and its optical properties.J.Nanosci.Nanotechno.2018,18,5654-5659.
(12)Zhuang,H.Z.;Zhang,S.Y.;Zhang,X.K.;Xue,C.S.;Li,B.L.;Wang,D.X.;Shen,J.B.Synthesis and characterization ofβ-Ga2O3 nanorods.Appl.Surf.Sci.2008,254,3057-3060.
(13)Khan,A.;Jadwisienczak,W.M.;Kordesch,M.E.One-step preparation of ultra-wideβ-Ga2O3 microbelts and their photoluminescence study.Physica.E 2006,35,207-211.
(14)Yang,G.;Jang,S.;Ren,F.;Pearton,S.J.;Kim,J.Influence of high-energy proton irradiation on?2-Ga2O3 nanobelt field-effect transistors.Acs.Appl.Mater.Inter.2017,9,40471-40476.
(15)Patil-Chaudhari,D.;Ombaba,M.;Jin,Y.O.;Mao,H.;Montgomery,K.H.;Lange,A.;Mahajan,S.;Woodall,J.M.;Islam,M.S.Solar blind photodetectors enabled by nanotextured beta-Ga2O3 films grown via oxidation of Ga As substrates.IEEE Photonics J.2017,9,2300207-7.
(16)Lin,H.J.;Gao,H.;Gao,P.X.UV-enhanced CO sensing using Ga2O3-based nanorod arrays at elevated temperature.Appl.Phys.Lett.2017,110,043101-5.
(17)Feng,W.;Wang,X.;Zhang,J.;Wang,L.;Zheng,W.;Hu,P.;Cao,W.;Yang,B.Synthesis of two-dimensionalβ-Ga2O3 nanosheets for high-performance solar blind photodetectors.J.Mater.Chem.C 2014,2,3254-3259.
(18)Shao,T.;Zhang,P.;Li,Z.;Jin,L.Photocatalytic decomposition of perfluorooctanoic acid in pure water and wastewater by needle-like nanostructured gallium oxide.Appl.Catal.B Environ.2013,142,654-661.
(19)Kwon,Y.;Lee,G.;Oh,S.;Kim,J.;Pearton,S.J.;Ren,F.Tuning the thickness of exfoliated quasi-two-dimensionalβ-Ga2O3 flakes by plasma etching.Appl.Phys.Lett.2017,110,131901-5.
(20)Feng,Q.;Liu,J.;Yang,Y.;Pan,D.;Xing,Y.;Shi,X.;Xia,X.;Liang,H.Catalytic growth and characterization of single crystalline Zn doped p-typeβ-Ga2O3 nanowires.J.Alloy.Compd.2016,687,964-968.
(21)Abdullah,Q.N.;Yam,F.K.;Mohmood,K.H.;Hassan,Z.;Qaeed,M.A.;Bououdina,M.;Almessiere,M.A.;Al-Otaibi,A.L.;Abdulateef,S.A.Free growth of one-dimensionalβ-Ga2O3 nanostructures including nanowires,nanobelts and nanosheets using a thermal evaporation method.Cera.Int.2016,42,13343-13349.
(22)Chen,C.;Yan,T.;Hsiang,W.;Chou,M.M.C.Morphological control over nonpolar Ga N nanostructures on(100)γ-LiAlO2 substrate.Mater.Lett.2014,130,271-273.
(23)Chen,C.;Chou,M.M.;Yan,T.;Huang,H.;Lu,C.Y.;Chen,C.The synthesis route and the growth mechanism of aligned Ga N nanobelts.Chem.Commun.2014,50,5695-5698.
(24)Hou,W.C.;Chen,L.Y.;Tang,W.C.;Hong,F.C.N.Control of seed detachment in Au-assisted Ga N nanowire growths.Cryst.Growth Des.2016,11,990-994.