基于混合威布尔模型的片式钽电容器早期失效分析
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摘要
由于现行片式钽电容器威布尔失效率定级方法对失效数进行了两点式的线性化处理,忽略了击穿时间分布信息,不能为产品的早期失效分析提供有效线索。本文引入混合威布尔模型,采用电压加速方法,收集片式钽电容器的击穿时间分布信息,绘制累积密度失效分布曲线,分析显示其早期失效符合二重混合威布尔分布。基于威布尔分布形状参数与失效机理具有直接关联性的基本理论,分析了片式钽电容器潜在的失效原因,对优化生产工艺、提升质量和可靠性具有指导意义。
Since the time-to-failures distribution was neglected during the two-point linearization of failures of chip Ta capacitors,it is unable to further analyze early failures based on the existing Weibull grading testing method.Based on voltage acceleration test,the distribution data of time-to-failure was collected and cumulative density function was plotted for failures.The results show that time-to failure of the capacitors can be modeled by two-fold mixed Weibull distribution.According to the theory that the shape parameter of Weibull distribution is an indicator of failure mechanism,the causes of the potential failure were analyzed.With the new method,it is possible to optimize the manufacturing process and further improve the quality and reliability of chip Ta capacitors.
Since the time-to-failures distribution was neglected during the two-point linearization of failures of chip Ta capacitors,it is unable to further analyze early failures based on the existing Weibull grading testing method.Based on voltage acceleration test,the distribution data of time-to-failure was collected and cumulative density function was plotted for failures.The results show that time-to failure of the capacitors can be modeled by two-fold mixed Weibull distribution.According to the theory that the shape parameter of Weibull distribution is an indicator of failure mechanism,the causes of the potential failure were analyzed.With the new method,it is possible to optimize the manufacturing process and further improve the quality and reliability of chip Ta capacitors.
引文
[1]Burkhart J N.Use of accelerated testing techniques in military specification:MIL-C-39003[S].[S.l.:s.n.],1983:111-117.
[2]Department of Defense of U.S.Capacitor,fixed,electrolytic (tantalum),chip,established reliability and non-established reliability general specification for:MIL-C-55365B [S].[S.l.:s.n.],1987.
[3]Department of Defense of U.S.Capacitor,fixed,electrolytic (tantalum),chip,established reliability,non-established reliability,and high reliability,general specification for:MIL-PRF-55365J [S].[S.l.:s.n.],2017.
[4]中国人民解放军总装备部.片式固体电解质钽固定电容器通用规范:GJB2283A-2014 [S].北京:中国标准出版社,2014.
[5]Teverovsky A.Scintillation breakdowns and reliability of solid tantalum capacitors [J].IEEE Transactions on Device and Materials Reliability,2009,9:318-324.
[6]Teverovsky A.Analysis of weibull grading test for solid tantalum capacitors [R].Washington,D.C.,United States:NASA,2010:103-120.
[7]Teverovsky A.Screening and qualification testing of chip tantalum capacitors for space applications [R].Washington,D.C.,United States:NASA,2010.
[8]易兴元,姚新民,孙伟.混合威布尔分布及其在机械产品可靠性中的应用研究[C]// 2006年全国机械可靠性学术交流会论文集.北京:中国机械工程学会可靠性工程分会,2006.
[9]Lin H,Bouyssou E,Ventura L.TDDB characterization of BST capacitors exhibiting bimodal Weibull distributions[C]// Integrated Reliability Workshop Final Report.NY,USA:IEEE,2012:87-89.
[10]Liu D,Sampson M J.Some aspects of the failure mechanisms in BaTiO3-based multilayer ceramic capacitors [R].Washington,D.C.,United States:NASA,2012:49-61.
[11]Goudswaard B,Dreisens F J J.Failure mechanism of solid tantalum capacitors [J].Electrocomponent Science and Technology,1976,3:171-179.
[12]Murthy D N P,Xie M,Jiang R.Weibull models [M].New Jersey:Wiley,2003.
[13]Mcpherson J W.Reliability physics and engineering:time-to-failure modeling [M].Berlin:Springer,2010.
[14]Mcpherson J W.Time dependent dielectric breakdown physics-models revisited [J].Microelectronics & Reliability,2012,52(9/10):1753-1760.
[15]Manceau J P,Bruyere S,Jeannot S,et al.Leakage current variation with time in Ta2O5 MIM and MIS capacitors[C]// Integrated Reliability Workshop Final Report,2006 IEEE International.NY,USA:IEEE,2006:129-133.
[16]Teverovsky A.Degradation of leakage currents in solid tantalum capacitors under steady-state bias conditions[C]// Electronic Components and Technology Conference.NY,USA:IEEE,2010:752-757.
[17]曲喜新.固体钽电解电容器的失效机理[J].电子元件与材料,1988,7(4):3-13.
[18]Zednicek T,Sikula J,Leibovits H.A study of field crystallization in tantalum capacitors and its effect on DCL and reliability [R].Washington,D.C.,United States:NASA,2009.
[19]Pozdeev-Freeman Y,Gladkikh A,Karpovski M,et al.Effect of dissolved oxygen on thermal oxidation in Ta2O5 /Ta sandwiches [J].Journal of Electronic Materials,1998,27(9):1034-1037.
[20]Sawada H,Kawakami K.Electronic structure of oxygen vacancy in Ta2O5[J].Journal of Applied Physics,1999,86(2):956-959.
[21]Pozdeev-Freeman Y,Rozenberg Y,Gladkikh A,et al.Critical oxygen content in porous anodes of solid tantalum capacitors [J].Journal of Materials Science Materials in Electronics,1998,9(4):309-311.
本文系“第十七届全国电介质会议暨第十九届全国电子元件会议及2018国际固态制冷材料和器件研讨会”会议论文。
[2]Department of Defense of U.S.Capacitor,fixed,electrolytic (tantalum),chip,established reliability and non-established reliability general specification for:MIL-C-55365B [S].[S.l.:s.n.],1987.
[3]Department of Defense of U.S.Capacitor,fixed,electrolytic (tantalum),chip,established reliability,non-established reliability,and high reliability,general specification for:MIL-PRF-55365J [S].[S.l.:s.n.],2017.
[4]中国人民解放军总装备部.片式固体电解质钽固定电容器通用规范:GJB2283A-2014 [S].北京:中国标准出版社,2014.
[5]Teverovsky A.Scintillation breakdowns and reliability of solid tantalum capacitors [J].IEEE Transactions on Device and Materials Reliability,2009,9:318-324.
[6]Teverovsky A.Analysis of weibull grading test for solid tantalum capacitors [R].Washington,D.C.,United States:NASA,2010:103-120.
[7]Teverovsky A.Screening and qualification testing of chip tantalum capacitors for space applications [R].Washington,D.C.,United States:NASA,2010.
[8]易兴元,姚新民,孙伟.混合威布尔分布及其在机械产品可靠性中的应用研究[C]// 2006年全国机械可靠性学术交流会论文集.北京:中国机械工程学会可靠性工程分会,2006.
[9]Lin H,Bouyssou E,Ventura L.TDDB characterization of BST capacitors exhibiting bimodal Weibull distributions[C]// Integrated Reliability Workshop Final Report.NY,USA:IEEE,2012:87-89.
[10]Liu D,Sampson M J.Some aspects of the failure mechanisms in BaTiO3-based multilayer ceramic capacitors [R].Washington,D.C.,United States:NASA,2012:49-61.
[11]Goudswaard B,Dreisens F J J.Failure mechanism of solid tantalum capacitors [J].Electrocomponent Science and Technology,1976,3:171-179.
[12]Murthy D N P,Xie M,Jiang R.Weibull models [M].New Jersey:Wiley,2003.
[13]Mcpherson J W.Reliability physics and engineering:time-to-failure modeling [M].Berlin:Springer,2010.
[14]Mcpherson J W.Time dependent dielectric breakdown physics-models revisited [J].Microelectronics & Reliability,2012,52(9/10):1753-1760.
[15]Manceau J P,Bruyere S,Jeannot S,et al.Leakage current variation with time in Ta2O5 MIM and MIS capacitors[C]// Integrated Reliability Workshop Final Report,2006 IEEE International.NY,USA:IEEE,2006:129-133.
[16]Teverovsky A.Degradation of leakage currents in solid tantalum capacitors under steady-state bias conditions[C]// Electronic Components and Technology Conference.NY,USA:IEEE,2010:752-757.
[17]曲喜新.固体钽电解电容器的失效机理[J].电子元件与材料,1988,7(4):3-13.
[18]Zednicek T,Sikula J,Leibovits H.A study of field crystallization in tantalum capacitors and its effect on DCL and reliability [R].Washington,D.C.,United States:NASA,2009.
[19]Pozdeev-Freeman Y,Gladkikh A,Karpovski M,et al.Effect of dissolved oxygen on thermal oxidation in Ta2O5 /Ta sandwiches [J].Journal of Electronic Materials,1998,27(9):1034-1037.
[20]Sawada H,Kawakami K.Electronic structure of oxygen vacancy in Ta2O5[J].Journal of Applied Physics,1999,86(2):956-959.
[21]Pozdeev-Freeman Y,Rozenberg Y,Gladkikh A,et al.Critical oxygen content in porous anodes of solid tantalum capacitors [J].Journal of Materials Science Materials in Electronics,1998,9(4):309-311.
本文系“第十七届全国电介质会议暨第十九届全国电子元件会议及2018国际固态制冷材料和器件研讨会”会议论文。