基于共源共栅结构的高输出功率VCO
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摘要
为了降低与射频系统级相关的功耗,以及增加输出功率,提出了一种共源共栅结构的CMOS VCO。所提出的VCO核心包含有共源共栅结构,以增加VCO的供电电压。为了降低与栅源级间和栅漏级间击穿相关的可靠性问题,将共源晶体管的栅级节点与共栅晶体管的源级节点相连。为了验证所提出VCO的有效性,采用90nm的RF CMOS工艺设计了一款2.4GHz的CMOS VCO芯片,由测试结果可得,该款VCO在2V电源电压供电下取得了相对较高的输出功率、较低的相位噪声以及变化较平缓的振荡频率。
To reduce the power consumption related to the RF system and to increase the output power,a cascade CMOS voltage-controlled oscillator(VCO)is proposed.The VCO core consists of a cascade structure to increase the supply voltage of the VCO.To mitigate the reliability problem associated with gate-source and gatedrain breakdowns,the gate nodes of common-source transistors are connected to the source nodes of commongate transistors.To verify the functionality of the proposed VCO,a 2.4 GHz CMOS VCO using the 90 nm RF CMOS process is designed.It is known from the measured results that the proposed VCO can achieve a high output power,a low phase noise,and a flat-changed oscillation frequency under 2 Vsupply voltage.
To reduce the power consumption related to the RF system and to increase the output power,a cascade CMOS voltage-controlled oscillator(VCO)is proposed.The VCO core consists of a cascade structure to increase the supply voltage of the VCO.To mitigate the reliability problem associated with gate-source and gatedrain breakdowns,the gate nodes of common-source transistors are connected to the source nodes of commongate transistors.To verify the functionality of the proposed VCO,a 2.4 GHz CMOS VCO using the 90 nm RF CMOS process is designed.It is known from the measured results that the proposed VCO can achieve a high output power,a low phase noise,and a flat-changed oscillation frequency under 2 Vsupply voltage.
引文
[1]CHANG Y T,LU H C.A K-Band High-Efficiency VCO Using Current Reused Technique[J].IEEE Microwave and Wireless Components Letters,2017,27(12):1134-1136.
[2]SHIRAZI A H M,NIKPAIK A,MOLAVI R,et al.On the Design of mm-Wave Self-Mixing-VCO Architecture for High Tuning-Range and Low Phase Noise[J].IEEE Journal of Solid-State Circuits,2016,51(5):1210-1222.
[3]HSU M T,LI W J,HSU S C.Design of Low Phase Noise CMOS VCO Using Cross Coupled Topology with Capacitor Feedback[J].Microelectronics Journal,2016,54:32-39.
[4]KIM S,OH T.2×3.2Gb/s Single-Ended IO Transmitter with Low-Power Dynamic FIR Driver for the LPDDR4Standard[J].Electronics Letters,2017,53(24):1566-1568.
[5]LEE C J,KANG J S,PARK C S.A D-Band LowPower Gain-Boosted Up-Conversion Mixer with Low LO Power in 40-nm CMOS Technology[J].IEEE Microwave and Wireless Components Letters,2017,27(12):1113-1115.
[6]LIN J T,LIN H H,CHEN Y J,et al.Vertical Transistor with n-Bridge and Body on Gate for Low-Power1T-DRAM Application[J].IEEE Trans on Electron Devices,2017,64(12):4937-4945.
[7]JANG S L,LIN Y C.Low-Power Three-Path Inductor Class-C VCO Without any Dynamic Bias Circuit[J].Electronics Letters,2017,53(17):1186-1188.
[8]ZOU P,MA K,MOU S.A Low Phase Noise VCOBased on Substrate-Integrated Suspended Line Technology[J].IEEE Microwave and Wireless Components Letters,2017,27(8):727-729.
[9]TU C C,WANG Y K,LIN T H.A Low-Noise AreaEfficient Chopped VCO-Based CTDSM for Sensor Applications in 40-nm CMOS[J].IEEE Journal of SolidState Circuits,2017,52(10):2523-2532.
[10]陈绍东,牛子昱.基于电流复用技术的亚mW级CMOS VCO设计[J].雷达科学与技术,2016,14(5):558-560.CHEN Shaodong,NIU Ziyu.Design of Sub-Milliwatt CMOS VCO with Current-Reuse Technique[J].Radar Science and Technology,2016,14(5):558-560.(in Chinese)
[11]ZHANG Jincan,ZHANG Yuming,Lü Hongliang,et al.A Ku-Band Wide-Tuning-Range High-OutputPower VCO in InGaP/GaAs HBT Technology[J].Journal of Semiconductors,2015,36(6)[065010]:1-5.
[12]JAIN S,JANG S L,TCHAMOV N T.Oscillation Mode Swapping Dual-Band VCO[J].IEEE Microwave and Wireless Components Letters,2016,26(3):210-212.
[13]JANG S L,LIN Y C,LAI W C,et al.A Class-CQuadrature VCO Using the Varactor Coupling Technique[J].Microwave and Optical Technology Letters,2016,58(8):1961-1963.
[14]LEE C H,LIM C,YUN T Y.Swing and PhaseNoise Enhanced VCO with Capacitive-Division Dynamic-Threshold MOS[J].IEEE Microwave and Wireless Components Letters,2016,26(3):219-221.
[2]SHIRAZI A H M,NIKPAIK A,MOLAVI R,et al.On the Design of mm-Wave Self-Mixing-VCO Architecture for High Tuning-Range and Low Phase Noise[J].IEEE Journal of Solid-State Circuits,2016,51(5):1210-1222.
[3]HSU M T,LI W J,HSU S C.Design of Low Phase Noise CMOS VCO Using Cross Coupled Topology with Capacitor Feedback[J].Microelectronics Journal,2016,54:32-39.
[4]KIM S,OH T.2×3.2Gb/s Single-Ended IO Transmitter with Low-Power Dynamic FIR Driver for the LPDDR4Standard[J].Electronics Letters,2017,53(24):1566-1568.
[5]LEE C J,KANG J S,PARK C S.A D-Band LowPower Gain-Boosted Up-Conversion Mixer with Low LO Power in 40-nm CMOS Technology[J].IEEE Microwave and Wireless Components Letters,2017,27(12):1113-1115.
[6]LIN J T,LIN H H,CHEN Y J,et al.Vertical Transistor with n-Bridge and Body on Gate for Low-Power1T-DRAM Application[J].IEEE Trans on Electron Devices,2017,64(12):4937-4945.
[7]JANG S L,LIN Y C.Low-Power Three-Path Inductor Class-C VCO Without any Dynamic Bias Circuit[J].Electronics Letters,2017,53(17):1186-1188.
[8]ZOU P,MA K,MOU S.A Low Phase Noise VCOBased on Substrate-Integrated Suspended Line Technology[J].IEEE Microwave and Wireless Components Letters,2017,27(8):727-729.
[9]TU C C,WANG Y K,LIN T H.A Low-Noise AreaEfficient Chopped VCO-Based CTDSM for Sensor Applications in 40-nm CMOS[J].IEEE Journal of SolidState Circuits,2017,52(10):2523-2532.
[10]陈绍东,牛子昱.基于电流复用技术的亚mW级CMOS VCO设计[J].雷达科学与技术,2016,14(5):558-560.CHEN Shaodong,NIU Ziyu.Design of Sub-Milliwatt CMOS VCO with Current-Reuse Technique[J].Radar Science and Technology,2016,14(5):558-560.(in Chinese)
[11]ZHANG Jincan,ZHANG Yuming,Lü Hongliang,et al.A Ku-Band Wide-Tuning-Range High-OutputPower VCO in InGaP/GaAs HBT Technology[J].Journal of Semiconductors,2015,36(6)[065010]:1-5.
[12]JAIN S,JANG S L,TCHAMOV N T.Oscillation Mode Swapping Dual-Band VCO[J].IEEE Microwave and Wireless Components Letters,2016,26(3):210-212.
[13]JANG S L,LIN Y C,LAI W C,et al.A Class-CQuadrature VCO Using the Varactor Coupling Technique[J].Microwave and Optical Technology Letters,2016,58(8):1961-1963.
[14]LEE C H,LIM C,YUN T Y.Swing and PhaseNoise Enhanced VCO with Capacitive-Division Dynamic-Threshold MOS[J].IEEE Microwave and Wireless Components Letters,2016,26(3):219-221.