Mg掺杂对溶胶-凝胶法生长MZO纳米薄膜性能的影响
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摘要
通过溶胶-凝胶(sol-gel)法分别在石英及Si衬底上制备了含不同Mg原子数分数的氧化镁锌(MZO)纳米薄膜,并利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、高阻测量仪研究了Mg掺杂对MZO纳米薄膜的表面形貌、结构及电学性能等方面的影响。结果表明,随着Mg原子数分数的增加,MZO薄膜的晶粒数目增加,且排列致密和均匀,表现为ZnO的六方纤锌矿结构;当Mg原子数分数增加到一定程度时,薄膜XRD的半高宽(FWHM)增大,结晶质量降低,MZO薄膜中ZnO的含量减少,晶粒尺寸变小,其电阻率明显增加且方块电阻稳定性较好;通过紫外-可见光分光度计(UV-VIS)透射率曲线测试,发现MZO薄膜在紫外光区有明显的吸收特性,随着Mg含量的增加透射率曲线发生蓝移。
Magnesium zinc oxide(MZO) nano thin-films with different Mg atom fractions were prepared on quartz and Si substrates by sol-gel method. The effects of Mg doping on the surface morphology, structure and electrical properties of MZO nano thin-films were investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM) and high-resistance measuring instruments. The results show that with the increase of the Mg atom fraction,the crystal grain number of the MZO thin-film increases, accompanying with the more dense and uniform arrangement, which exhibits a hexagonal wurtzite structure of ZnO. With the increase of Mg atom fraction, the half-height width(FWHM) increases, the crystal quality drops down, the content of ZnO in the MZO film decreases, and the grain size of the MZO film reduces. The resistivity of MZO film increases obviously and the stability of the square resistance is better. The transmission curve of ultraviolet-visible spectrophotometer(UV-VIS) shows that the MZO film has an obvious absorption characteristics in the ultraviolet region. And the transmittance curve is blue-shifted with the increase of Mg content.
Magnesium zinc oxide(MZO) nano thin-films with different Mg atom fractions were prepared on quartz and Si substrates by sol-gel method. The effects of Mg doping on the surface morphology, structure and electrical properties of MZO nano thin-films were investigated by X-ray diffraction(XRD), scanning electron microscopy(SEM) and high-resistance measuring instruments. The results show that with the increase of the Mg atom fraction,the crystal grain number of the MZO thin-film increases, accompanying with the more dense and uniform arrangement, which exhibits a hexagonal wurtzite structure of ZnO. With the increase of Mg atom fraction, the half-height width(FWHM) increases, the crystal quality drops down, the content of ZnO in the MZO film decreases, and the grain size of the MZO film reduces. The resistivity of MZO film increases obviously and the stability of the square resistance is better. The transmission curve of ultraviolet-visible spectrophotometer(UV-VIS) shows that the MZO film has an obvious absorption characteristics in the ultraviolet region. And the transmittance curve is blue-shifted with the increase of Mg content.
引文
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[2] XIE X H, ZHANG Z Z, LI B H, et al. Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping[J]. Optics Express, 2014, 22(1):246-253.
[3] FAN M M, LIU K W, CHEN X, et al. Mechanism of excellent photoelectric characteristics in mixed-phase ZnMgO ultraviolet photodetectors with single cut-off wavelength[J]. ACS Applied Materials and Interfaces, 2015, 7(37):20600-20606.
[4] MOHANTA S K, NAKAMURA A, TEMMYO J. Synthesis and characterization of N, In co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition[J]. Journal of Crystal Growth, 2013, 375(375):1-5.
[5] BOUTWELL R C, WEI M, SCHOENFELD W V. The effect of substrate temperature and source flux on cubic ZnMgO UV sensors grown by plasma-enhanced molecular beam epitaxy [J]. Applied Surface Science, 2013, 284(11):254-257.
[6] SHEWALE P S, YU Y S. Structural, surface morphological and UV photodetection properties of pulsed laser deposited Mg-doped ZnO nanorods: effect of growth time[J]. Journal of Alloys and Compounds, 2016, 654:79-86.
[7] 刘虎林,王兴,田进寿,等. 高分辨紫外电子轰击互补金属氧化物半导体器件的实验研究[J].物理学报,2018,67(1):014209-1-014209-6.LIU H L, WANG X, TIAN J S, et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. Acta Physica Sinica, 2018,67(1):014209-1-014209-6(in Chinese).
[8] HAJIMAZDARANI M, NADERI N, YARMAND B, et al. Enhanced optical properties of ZnS-rGO nanocomposites for ultraviolet detection applications[J]. Ceramics International, 2018,44(15):17878-17884.
[9] YANG W, VISPUTE R D, CHOOPUN S, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films[J]. Applied Physics Letters, 2001, 78(18):2787-2789.
[10] BOUTWELL R C, WEI M, BAUDELET M, et al. Investigation and impact of oxygen plasma compositions on cubic ZnMgO grown by molecular beam epitaxy[J]. Journal of Alloys and Compounds, 2014, 584:327-330.
[11] MACLEOD B A, SCHULZ P, COWAN S R, et al. Improved performance in bulk heterojunction organic solar cells with a sol-gel MgZnO electron-collecting layer[J]. Advanced Energy Materials, 2014, 4(13):1400073-1-1400073-5.
[12] 王伟娜,万庆清,周军,等. 制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响[J].物理学报,2009, 58(5):3461-3467.WANG W N, WAN Q Q, ZHOU J, et al. Influence of fabrication technique on structure and photoluminescence of Zn1-xMgxO thin films[J]. Acta Physica Sinica, 2009, 58(5):3461-3467(in Chinese).
[13] LI B, LUO B H, HE K J, et al. Effect of Mg on nucleation process of recrystallization in Al-Mg-Si/SiCp composite[J]. Transactions of Nonferrous Metals Society of China, 2016, 26(10):2561-2566.
[14] 庄世豪, 顾吴瑜, 杜艾,等. 基于微波分光计的谢乐公式验证实验[J]. 大学物理, 2016, 35(7):37-41.ZHUANG S H, GU W Y, DU A, et al. Microwave spectrometer verifying Scherrer equation[J]. College Physics,2016,35(7):37-41(in Chinese).
[15] 刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 7版. 北京:电子工业出版社, 2011:93-96.
[16] 马德福, 胡跃辉, 陈义川,等. 微量Mg掺杂对sol-gel制备Zn1-xMgxO薄膜结构形貌及其透明导电性的影响[J]. 中国陶瓷, 2014,50(2):15-20. MA D F, HU Y H, CHEN Y C, et al. Effects of doping diluted Mg on morphology structure and transparent conducting properties of Zn1-xMgxO films prepared by sol-gel method[J].China Ceramics,2014,50 (2):15-20.(in Chinese)
[17] HARISKOS D, FUCHS B, MENNER R, et al. The Zn(S,O,OH)/ZnMgO buffer in thin-film Cu(In,Ga)(Se,S)2-based solar cells part II: magnetron sputtering of the ZnMgO buffer layer for in-line co-evaporated Cu(In,Ga)Se2, solar cells[J]. Progress in Photovoltaics Research and Applications, 2009, 17(7):479-488.