利用刻蚀工艺制备碲镉汞雪崩光电二极管
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摘要
碲镉汞雪崩光电二极管是第三代红外焦平面探测器的主要发展方向之一.提出一种利用离子束刻蚀工艺制备碲镉汞雪崩光电二极管器件的方法,并研究了截止波长、耗尽区厚度与器件增益的关系.利用此方法制备截止波长4. 8μm的中波器件在17 V反向偏置下增益可达1 000.对器件进行了噪声频谱测试,计算了其过剩噪声因子.
HgCdTe avalanche photo diode( APD) is one of the developing trends of third generation infrared FPA detectors. This article presents a newmethod to fabricate HgCdTe APD by ion beam etching( IBE),and discusses the relation of gain to cutoff wavelength and depletion region thickness. A gain of 1 000 at a bias of 17 V and a cutoff wavelength of 4. 8 μm was achieved. The excess noise factor,F,is calculated after a noise spectrum test.
HgCdTe avalanche photo diode( APD) is one of the developing trends of third generation infrared FPA detectors. This article presents a newmethod to fabricate HgCdTe APD by ion beam etching( IBE),and discusses the relation of gain to cutoff wavelength and depletion region thickness. A gain of 1 000 at a bias of 17 V and a cutoff wavelength of 4. 8 μm was achieved. The excess noise factor,F,is calculated after a noise spectrum test.
引文
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[9]GU Ren-Jie,SHEN Chuan,WANG Wei-Qiang,et al.MBE growth Hg Cd Te avalanche photodiode based on PINstructure[J].Journal of Infrared and Millimeter Waves,2013,32(2):136-140.(顾仁杰,沈川,王伟强,等.MBE生长的PIN结构碲镉汞红外雪崩光电二极管.红外与毫米波学报),2013,32(2):136-140.
[10]YANG Jian-Rong.Physics and technology of Hg Cd Te materials[M].National Defense Industry Press(杨建荣.碲镉汞材料物理与技术.国防工业出版社),2012.
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[12]Singh A,Srivastav V,Pal R.Hg Cd Te avalanche photodiodes:A review[J].Optics&Laser Technology,2011,43(7):1358-1370.
[13]Reine M B,Marciniec J W,Wong K K,et al.Hg Cd Te MWIR back-illuminated electron-initiated avalanche photodiode arrays[J].SPIE,2006:629403-629403-12.
[14]Rothman J,Mollard L,Bosson S,et al.Short-Wave Infrared Hg Cd Te Avalanche Photodiodes[J].Journal of Electronic Materials,2012,41(10):2928-2936.
[15]Kinch M A,Beck J D,Wan C F,et al.Hg Cd Te electron avalanche photodiodes[J].Journal of electronic materials,2004,33(6):630-639.
[16]LI Yi-Jian.The study on APD circuit Simulation and excess noise factor experiment[D].Huazhong University of Science Technology(李奕键.APD电路模拟与过剩噪声因子.华中科技大学),2013.
[17]Leveque G,Nasser M,Bertho D,et al.Ionization energies in Cdx Hg1-xTe avalanche photodiodes[J].Semiconductor science and technology,1993,8(7):1317.
[18]Qiu W C,Hu W D,Chen L,et al.Dark current transport and avalanche mechanism in Hg Cd Te electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2015,62(6):1926-1931.
[19]Li Q,He J L,Hu W D,et al.Influencing sources for dark current transport and avalanche mechanisms in planar and mesa Hg Cd Te p-i-n electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2018,65(2),572-576.
[2]Shin S H,Pasko J G,Law H D,et al.1.22μm Hg Cd Te/Cd Te avalanche photodiodes[J].Applied Physics Letters,1982,40(11):965-967.
[3]Okuto Y,Crowell C R.Energy-conservation considerations in the characterization of impact ionization in semiconductors[J].Physical Review B,1972,6(8):3076.
[4]Perrais G,Gravrand O,Baylet J,et al.Gain and dark current characteristics of planar Hg Cd Te avalanche photo diodes[J].Journal of electronic materials,2007,36(8):963-970.
[5]Rothman J,Perrais G,Destefanis G,et al.High performance characteristics in pin MW Hg Cd Te e-APDs[J].International Society for Optics and Photonics,2007:654219-654219-10.
[6]Rothman J,Gravrand O,Mollard L,et al.Hg Cd Te APD-focal plane array development at DEFIR[J].Proc Spie,2010,7834(1):78340O-78340O-8.
[7]Kerlain A,Bonnouvrier G,Rubaldo L,et al.Performance of mid-wave infrared Hg Cd Te e-avalanche photodiodes[J].Journal of electronic materials,2012,41(10):2943-2948.
[8]LI Hai-Bin.Study on preparation technologies of Hg Cd Te electron avalanche photodetectors[D].Shanghai Institute of Technical Physics(李海滨.碲镉汞电子雪崩光电探测器制备技术研究.上海技术物理研究所).2011.
[9]GU Ren-Jie,SHEN Chuan,WANG Wei-Qiang,et al.MBE growth Hg Cd Te avalanche photodiode based on PINstructure[J].Journal of Infrared and Millimeter Waves,2013,32(2):136-140.(顾仁杰,沈川,王伟强,等.MBE生长的PIN结构碲镉汞红外雪崩光电二极管.红外与毫米波学报),2013,32(2):136-140.
[10]YANG Jian-Rong.Physics and technology of Hg Cd Te materials[M].National Defense Industry Press(杨建荣.碲镉汞材料物理与技术.国防工业出版社),2012.
[11]D'Souza A I,Stapelbroek M G,Skokan M R,et al.SWIRto LWIR HDVIP Hg Cd Te detector array performance[J].Proceedings of Spie,2006,6206.
[12]Singh A,Srivastav V,Pal R.Hg Cd Te avalanche photodiodes:A review[J].Optics&Laser Technology,2011,43(7):1358-1370.
[13]Reine M B,Marciniec J W,Wong K K,et al.Hg Cd Te MWIR back-illuminated electron-initiated avalanche photodiode arrays[J].SPIE,2006:629403-629403-12.
[14]Rothman J,Mollard L,Bosson S,et al.Short-Wave Infrared Hg Cd Te Avalanche Photodiodes[J].Journal of Electronic Materials,2012,41(10):2928-2936.
[15]Kinch M A,Beck J D,Wan C F,et al.Hg Cd Te electron avalanche photodiodes[J].Journal of electronic materials,2004,33(6):630-639.
[16]LI Yi-Jian.The study on APD circuit Simulation and excess noise factor experiment[D].Huazhong University of Science Technology(李奕键.APD电路模拟与过剩噪声因子.华中科技大学),2013.
[17]Leveque G,Nasser M,Bertho D,et al.Ionization energies in Cdx Hg1-xTe avalanche photodiodes[J].Semiconductor science and technology,1993,8(7):1317.
[18]Qiu W C,Hu W D,Chen L,et al.Dark current transport and avalanche mechanism in Hg Cd Te electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2015,62(6):1926-1931.
[19]Li Q,He J L,Hu W D,et al.Influencing sources for dark current transport and avalanche mechanisms in planar and mesa Hg Cd Te p-i-n electron-avalanche photodiodes[J].IEEE Transactions on Electron Devices,2018,65(2),572-576.