基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术
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摘要
基于含p-GaN帽层的Si基GaN材料,实现了增强型GaN功率电子器件与数字电路单片集成技术的开发。在同一片晶圆上实现了增强型高压GaN器件、DCFL结构反相器和17级环形振荡器。高压GaN功率电子器件阈值电压VTH达到1.2 V,击穿电压V_(BD)达到700 V,输出电流I_D达到8 A,导通电阻R_(ON)为300 mΩ。基于E/D集成技术的DCFL结构反相器低噪声和高噪声容限分别为0.63 V和0.95 V;所研制17级环形振荡器在输入6 V条件下振荡频率345 MHz,级延时为85 ps。
GaN power electronic devices and digital circuits were fabricated on Si-based GaN material with p-GaN cap monolithically. An enhancement-mode GaN power device with high breakdown voltage, a direct-coupled FET logic(DCFL) inverter and a 17-stage ring oscillator were realized on one same wafer. The threshold voltage VTH, breakdown voltage V_(BD), output current I_D and on-resistance R_(ON) of the GaN HEMT were 1.2 V, 700 V, 8 A, and 300 mΩ,respectively. The DCFL inverter was realized based on the enhancement-and depletion-mode integration technology, and its logic-low and logic-high noise margins were 0.63 V and 0.95 V, respectively. The 17-stage ring oscillator showed an oscillation frequency of 435 MHz and a propagation delay of 85 ps at a supply voltage of 6 V.
GaN power electronic devices and digital circuits were fabricated on Si-based GaN material with p-GaN cap monolithically. An enhancement-mode GaN power device with high breakdown voltage, a direct-coupled FET logic(DCFL) inverter and a 17-stage ring oscillator were realized on one same wafer. The threshold voltage VTH, breakdown voltage V_(BD), output current I_D and on-resistance R_(ON) of the GaN HEMT were 1.2 V, 700 V, 8 A, and 300 mΩ,respectively. The DCFL inverter was realized based on the enhancement-and depletion-mode integration technology, and its logic-low and logic-high noise margins were 0.63 V and 0.95 V, respectively. The 17-stage ring oscillator showed an oscillation frequency of 435 MHz and a propagation delay of 85 ps at a supply voltage of 6 V.
引文
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[3]Micovic M,Tsen T,Hu M,et al.GaN enhancement/depletion-mode FET logic for mixed signal applications[J].Electronics Letters,2005,41(9):1081-1083.
[4]Cai Yong,Cheng Zhiqun,Tang W C W,et al.Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTinverters and ring oscillators using CF4 plasma treatment[J].IEEE Transactions on Electron Devices,2006,53(9):2223-2230.
[5]Kong Yuechan,Zhou Jianjun,Kong Cen,et al.Monolithic integration of E/D-Mode AlGaN/GaN MIS-HEMTs[J].IEEEElectron Device Letters,2014,35(3):336-338.
[6]Uemoto Y,Hikita M,Ueno H,et al.Gate injection transistor(GIT)-A normally-off AlGaN/GaN power transistor using conductivity modulation[J].IEEE Transactions on Electron Devices,2007,54(12):3393-3399.