用于最新技术节点Ge和SiGe的CMP技术研究进展
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摘要
对锗和锗化硅材料应用及发展前景进行了简单介绍。主要论述了在14 nm技术节点以下应用于pMOS晶体管沟道材料的锗的化学机械抛光(CMP)技术的发展现状,如抛光液组分的优化以及工艺参数的革新,经过CMP后,Ge的表面粗糙度可以有效降低到0.175 nm(10μm×10μm)。此外对在最新技术节点应用于CMOS以及缓冲层的SiGe材料的CMP技术发展现状进行了总结分析,通过浅沟道隔离技术以及使用优化后的抛光液对Si_(0.5)Ge_(0.5)沟道材料进行化学机械抛光处理后的表面粗糙度为0.09 nm(1μm×1μm)。最后,对目前国内外Ge和SiGe的CMP技术发展现状进行了总结,指出当前CMP技术存在的问题并对其未来发展方向进行了展望。
The application and development prospect of Ge and SiGe are simply introduced.The development status of the chemical mechanical polishing(CMP)technology of Ge for the pMOS transistor channel material under 14 nm technology node is mainly discussed,such as the optimization of slurry components and innovation of process parameters.And the surface roughness of the Ge reduces effectively to 0.175 nm(10μm×10μm)through the CMP.In addition,the CMP technology development status of SiGe applied in CMOS and buffer layer for the newest technology nodes are summarized and analyzed,and the surface roughness of the Si_(0.5)Ge_(0.5)channel materials is 0.09 nm(1μm×1μm)after the CMP with the shallow trench insulation technique and the optimized slurry.Finally,the CMP technology developments of Ge and SiGe are summarized,the existing problems in the current CMP technology are pointed out,and its future development direction is prospected.
The application and development prospect of Ge and SiGe are simply introduced.The development status of the chemical mechanical polishing(CMP)technology of Ge for the pMOS transistor channel material under 14 nm technology node is mainly discussed,such as the optimization of slurry components and innovation of process parameters.And the surface roughness of the Ge reduces effectively to 0.175 nm(10μm×10μm)through the CMP.In addition,the CMP technology development status of SiGe applied in CMOS and buffer layer for the newest technology nodes are summarized and analyzed,and the surface roughness of the Si_(0.5)Ge_(0.5)channel materials is 0.09 nm(1μm×1μm)after the CMP with the shallow trench insulation technique and the optimized slurry.Finally,the CMP technology developments of Ge and SiGe are summarized,the existing problems in the current CMP technology are pointed out,and its future development direction is prospected.
引文
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[24]YE W,ZHANG C H.Calculation on temperature rise of CMP process:roughness effects considered[J].Materials Science Forum,2008,575/576/577/578:1348-1353.
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[26]楼飞燕.CMP中抛光液膜特性的数值仿真和实验研究[D].杭州:浙江工业大学,2009.
[27]乔海红,卿德友,杨静,等.红外锗窗片的双面磨抛工艺[J].新技术新工艺,2009(10):111-113.
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[29]赵研,左敦稳,孙玉利,等.环境温度对单晶锗片低温抛光去除率的影响研究[J].人工晶体学报,2015(3):587-592.
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[31]KOSLOWSKI G,et al.The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers[J].ECS Transactions,2012,50(9):613-621.
[32]VINCENT B,WITTERS L,RICHARD O,et al.Selective growth of strained Ge channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and fin p-FET[J].ECS Transactions,2013,50(9):39-45.
[33]PITERA A J,TARASCHI G,LEE M L,et al.Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substrates[J].J Electrochem Soc,2004,151(7):443-447.
[34]SAWANO K,KAWAGUCHI K,UENO T,et al.Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing[J].Materials Science and Engineering:B,2002,89(1/2/3):406-409.
[35]LIN H Y,WU S L,CHANG S J,et al.DC and 1/fnoise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique[J].Solid-State Electronics,2009,53(8):905-908.
[36]SIEBERT M,LEUNISSEN L H A,ONG P,et al.CMP on SiGe materials—linking chemical and physical properties to design low defect and selective slurries[C]//Proceedings of the International Conference on Planarization/CMP Technology(ICPT).Kobe,Japan,2014:18-21.
[37]RHOADES R L.SiGe transfer layer CMP[C]//Proceedings of New Applications of Chemical Mechanical Planarization.San Jose,CA,USA,2015:23-26.
[38]BHONSLE R K,TEUGELS L,IBRAHIM S A U,et al.Inspection,characterizationand classification of defects for improved CMP of III-V materials[J].ECS Journal of Solid State Science and Technology,2015,4(11):P5073-P5077.
[39]NHO J S,OH M H,KIM J Y,et al.Cerium oxide powder,method for preparing the same,and CMP slurry comprising the same:US,US8388710[P].2013-03-05.
[2]ONG P,GILLOT C,ANSAR S,et al.CMP process development for high mobility channel materials[C]//Proceedings of International Conference on Planarization CMP Technology(ICPT2012).Grenoble,France,2012:1-6.
[3]KHARE M.A new wave of innovation in computer chips[EB/OL].(2015-07-09)[2016-04-16].http://asmarterplanet.com/blog/2015/07/a-new-wave-innovation-chips.html.
[4]TANAKA K,ZHANG R,TAKENAKA M,et al.Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance[J].Japanese Journal of Applied Physics,2015,54(4S):55-60.
[5]SHARMA A,SHELAR R,KULKARNI R,et al.BSIM4characterization of current enhancement in short channel s-Si/SiGe NMOS[C]//Proceedings of the 8th Spanish Conference on Electron Devices.Palma de Mallorca,Spain,2011:1-3.
[6]谢孟贤,古妮娜.SiGe半导体在微电子技术发展中的重要作用[J].微电子学,2008,38(1):34-43.
[7]陈培毅,王吉林.SiGe新技术及其应用前景[J].电子产品世界,2002(13):52-53.
[8]HISAMOTO D,LEE W C,KEDZIERSKI J,et al.FinFET—a self-aligned double-gate MOSFET scalable to 20 nm[J].IEEE Transactions on Electron Devices,2000,47(12):2320-2325.
[9]SONG X L,LI Y K,JIANG N,et al.Recent development of chemical mechanical polishing[J].Chemical Industry and Engineering Progress,2008,27(1):26-31.
[10]XU J,LUO J B,WANG L L,et al.The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing[J].Tribology International,2007,40(2):285-289.
[11]WHITE D,PARKER J.CMP compositions containing a soluble peroxometalate complex and methods of use thereof:US,US8541310[P].2013-09-24.
[12]BASIM G B,KARAGOZ A,CHEN L,et al.Surfactant mediated slurry formulations for Ge CMP applications[J].MRS Online Proceeding Library,2013,1560:25-28.
[13]刘春香,杨洪星,吕菲,等.锗晶片化学机械抛光的条件分析[J].中国电子科学研究院学报,2008,3(1):101-104.
[14]HARAME D L.SiGe,Ge,and related compounds:materials,processing,and devices[M].New Jersey:The Electrochemical Society,2008.
[15]PEDDETI S,ONG P,LEUNISSEN L H A,et al.Chemical mechanical polishing of Ge using colloidal silica particles and H2O2[J].Electrochemical and Solid-State Letters,2011,14(7):H254-H257.
[16]MATOVU J B,PENTA N K,PEDDETI S,et al.Chemical mechanical polishing of Ge in hydrogen peroxide-based silica slurries:role of ionic strength[J].Journal of the Electrochemical Society,2011,158(11):H1152-H1160.
[17]ONG P,WITTERS L,WALDRON N,et al.Ge-and III/VCMP for integration of high mobility channel materials[J].ECS Transactions,2011,34(1):647-652.
[18]SIEBERT J M,NOLLER B,LAN Y Q,et al.CMP slurries for Si-Ge-high mobility applications[C]//Proceedings of International Conference on Planarization/CMP Technology.Taiwan,China,2013:12-15.
[19]杨昊鹍,刘玉岭,牛新环,等.航空太阳能电池用超薄锗单晶的精密抛光[J].微电子学,2014(4):537-541.
[20]CAI Y,YU W,KIMERLING L C,et al.Chemical mechanical polishing of selective epitaxial grown germanium on silicon[J].ECS J Solid State Sci Technol,2014,3(2):P5-P9.
[21]KARAGOZ A,BASIM G B.Improving selectivity on germanium CMP applications[J].ECS Transactions,2014,61(17):37-41.
[22]KARAGOZ A,MAL J,BASIM G B.Understanding selectivity on germanium/SiO2 chemical mechanical planarization through design of experiments[J].MRS Online Proceeding Library,2015,1790:19-24.
[23]KARAGOZ A,BASIM G B.Controlling germanium CMP selectivity through slurry mediation by surface active agents[J].ECS J Solid State Sci Technol,2015,4(11):P5097-P5104.
[24]YE W,ZHANG C H.Calculation on temperature rise of CMP process:roughness effects considered[J].Materials Science Forum,2008,575/576/577/578:1348-1353.
[25]KIM H J,KIM H Y,JEONG H D,et al.Friction and thermal phenomena in chemical mechanical polishing[J].Journal of Materials Processing Technology,2002,130/131:334-338.
[26]楼飞燕.CMP中抛光液膜特性的数值仿真和实验研究[D].杭州:浙江工业大学,2009.
[27]乔海红,卿德友,杨静,等.红外锗窗片的双面磨抛工艺[J].新技术新工艺,2009(10):111-113.
[28]刘建河,张心明,王黎明.锗片的高速机械化学研磨工艺研究[J].现代制造工程,2012(7):99-102.
[29]赵研,左敦稳,孙玉利,等.环境温度对单晶锗片低温抛光去除率的影响研究[J].人工晶体学报,2015(3):587-592.
[30]ONG P,TEUGELS L,DELANDE M,et al.Updates on Ge and SiGe CMP processes for integration as high mobility channel materials[C]//Proceedings of the International Conference on Planarization/CMP Technology(ICPT).Chandler,AZ,USA,2015:1-3.
[31]KOSLOWSKI G,et al.The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers[J].ECS Transactions,2012,50(9):613-621.
[32]VINCENT B,WITTERS L,RICHARD O,et al.Selective growth of strained Ge channel on relaxed SiGe buffer in shallow trench isolation for high mobility Ge planar and fin p-FET[J].ECS Transactions,2013,50(9):39-45.
[33]PITERA A J,TARASCHI G,LEE M L,et al.Coplanar integration of lattice-mismatched semiconductors with silicon by wafer bonding Ge/Si1-xGex/Si virtual substrates[J].J Electrochem Soc,2004,151(7):443-447.
[34]SAWANO K,KAWAGUCHI K,UENO T,et al.Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing[J].Materials Science and Engineering:B,2002,89(1/2/3):406-409.
[35]LIN H Y,WU S L,CHANG S J,et al.DC and 1/fnoise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique[J].Solid-State Electronics,2009,53(8):905-908.
[36]SIEBERT M,LEUNISSEN L H A,ONG P,et al.CMP on SiGe materials—linking chemical and physical properties to design low defect and selective slurries[C]//Proceedings of the International Conference on Planarization/CMP Technology(ICPT).Kobe,Japan,2014:18-21.
[37]RHOADES R L.SiGe transfer layer CMP[C]//Proceedings of New Applications of Chemical Mechanical Planarization.San Jose,CA,USA,2015:23-26.
[38]BHONSLE R K,TEUGELS L,IBRAHIM S A U,et al.Inspection,characterizationand classification of defects for improved CMP of III-V materials[J].ECS Journal of Solid State Science and Technology,2015,4(11):P5073-P5077.
[39]NHO J S,OH M H,KIM J Y,et al.Cerium oxide powder,method for preparing the same,and CMP slurry comprising the same:US,US8388710[P].2013-03-05.