高k栅介质Al微掺杂HfO_2电学特性研究
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摘要
随着纳米器件的进一步微缩,Hf基高k材料已无法满足其发展需求,需要引入新的高k材料.为了减小纳米器件的等效氧化层厚度(EOT),向HfO_2中掺入Al元素,并分别在N_2、O_2氛围下,对其进行不同时间(15s、30s和60s)的后沉积退火(PDA),退火温度为650℃.结果表明,随着退火时间的增加,O_2中样品的EOT、栅极泄漏电流(I_g)以及平带电压(V_(fb))均未出现明显变化,而N_2中样品的EOT在退火时间为30s时急剧下降,V_(fb),也有所上升.最终,退火温度650℃退火时间30 s为最佳退火条件,此时EOT为0.88 nm,满足14/16 nm技术节点的要求.
With the further miniaturization of nano-devices, Hf-based high-k materials are unable to meet the need of development. The introduction of new high-k materials is required. In order to reduce the equivalent oxide thickness(EOT) of nano-devices, Hf02 was doped with A1 and subjected to post-deposition annealing( PDA) at different times(15 s, 30 s and 60 s) under N_2 and O_2 atmosphere, respectively,and the annealing temperature is 650 ℃. The results show that with the increase of annealing time, the EOT, gate leakage current(I_g), and flatband voltage( V_(fb)) of the sample in O_2 did not change significantly, while the EOT of the sample in N_2 decreased sharply when the PDA time is 30 s. And V_(fb), rose too. In the final process, annealing temperature 650 ℃ and annealing time 30 s are the best annealing condition,and the EOT is 0. 88 nm, which satisfies the requirements of the 14/16 nm technology node.
With the further miniaturization of nano-devices, Hf-based high-k materials are unable to meet the need of development. The introduction of new high-k materials is required. In order to reduce the equivalent oxide thickness(EOT) of nano-devices, Hf02 was doped with A1 and subjected to post-deposition annealing( PDA) at different times(15 s, 30 s and 60 s) under N_2 and O_2 atmosphere, respectively,and the annealing temperature is 650 ℃. The results show that with the increase of annealing time, the EOT, gate leakage current(I_g), and flatband voltage( V_(fb)) of the sample in O_2 did not change significantly, while the EOT of the sample in N_2 decreased sharply when the PDA time is 30 s. And V_(fb), rose too. In the final process, annealing temperature 650 ℃ and annealing time 30 s are the best annealing condition,and the EOT is 0. 88 nm, which satisfies the requirements of the 14/16 nm technology node.
引文
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[2]Kahraman A, Yilmaz E, Senol K, et al. Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO_2 MOS capacitors[J]. Journal of Material Science Materials in Electronics, 2015,26(11):8277-8284
[3]Martin M F, Sangbum K, Stephen L B, et al. Scaling the MOSFET gate dielectric:From high-k to higher-k?[J]. Microelectronic Engineering, 2009(86):1603-1608
[4]Niladri P M, Reshmi M,Thapa R K, et al. A tunneling current density model for ultra thin HfO_2 high-k dielectric material based MOS devices[J]. Superlattices and Microstructures, 2016(95):24-32
[5]Chen X L,Zhao H B, Xiong Y H,et al. Study of Hf-Ti-O Thin Film as High-k Gate Dielectric and Application for ETSOI MOSFETs[J]. Journal of Electronic Materials, 2016,45(8):4407-4411
[6]Hlali S, Hizem N, Kalboussi A. High-k dielectric materials for the gate oxide of a MIS capacitor:effect of interface states on the C-V characteristics[J].J Comput Electron, 2016(15):1340-1350
[7]Niladri P M, Thapa RK, Baishya S. Comparison of different high-k dielectricmaterials in MOS devicefrom C-V Characteristics[J]. Advanced Materials Research, 2013(816-817):60-64
[8]Wu Y H, Chen L L, Lyu R J, et al. MOS devices with high-k(ZrO)(LaO)alloy as gate dielectric formed by depositing ZrO/LaO/ZrO laminate and annealing[J]. IEEE Trans. Nanotechnol, 2012, 11(3):483-491
[9]Wang C D, Li C X, Leuing C H, et al. Effects of Sputtering and Annealing Temperatures on MOS Capacitor with HfTiON Gate Dielectric[C]. IEEE,2009:209-212
[10]Li X Y, Yajima T, Nishimura T, et al. Study of Si kinetics in interfacial SiO_2 scavenging in HfO_2 gate stacks[J]. Appl Phys Express, 2015,8(6):1304-1-1304-4
[11]Yu H Y, Kang J F, Chen J D, et al. Thermally Robust High Quality HfN/Hf02 Gate Stack for Advanced CMOS Devices[C]. IEDM Tech, 2003:99-102
[12]马雪丽.高K/金属栅结构CMOS器件栅工程工艺研究[D].北京:中国科学院大学,2014:34-40
[13]Ma X L, Yang H, Xiang J J, et al. Crystallization behaviors of ultrathin Al-doped Hf02 amorphous films grown by atomic layer deposition[J].中国物理B,2017, 26(2):461-466