Magnetoresistive properties of Ni-doped La_(0.7)Sr_(0.3)MnO_3 manganites
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  • 英文篇名:Magnetoresistive properties of Ni-doped La_(0.7)Sr_(0.3)MnO_3 manganites
  • 作者:Ahmed ; Mohamed ; Ahmed ; Abd ; El-Moez ; Ahmed ; Mohamed ; Medhat ; Abdelrady ; Abdellateef ; Hassan ; Ahmed ; Abd ; El-Ghanny
  • 英文作者:Ahmed Mohamed Ahmed;Abd El-Moez Ahmed Mohamed;Medhat Abdelrady Abdellateef;Hassan Ahmed Abd El-Ghanny;Physics Department,Faculty of Science,Sohag University;
  • 英文关键词:Manganites;;X-ray diffraction;;Structure;;Electrical resistivity;;Magnetoresistance
  • 中文刊名:XYJS
  • 英文刊名:稀有金属(英文版)
  • 机构:Physics Department,Faculty of Science,Sohag University;
  • 出版日期:2016-07-15
  • 出版单位:Rare Metals
  • 年:2016
  • 期:v.35
  • 基金:financially supported by Sohag University in Egypt
  • 语种:英文;
  • 页:XYJS201607008
  • 页数:8
  • CN:07
  • ISSN:11-2112/TF
  • 分类号:45-52
摘要
La_(0.7)Sr_(0.3)Mn_(1-x)Ni_xO_3(x = 0, 0.025, 0.050 and 0.075) ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni~(2+) leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni~(2+) doping increases the electrical resistivity, decreases the semiconductor–metal transition temperature(Tms) and relatively enhances the room temperature magnetoresistance(MR), especially in x = 0.025 and around Tms. With respect to conduction mechanism, the small polaron hopping(SPH) and the variable range hopping(VRH) models were used to examine conduction in the semiconducting region.
        La_(0.7)Sr_(0.3)Mn_(1-x)Ni_xO_3(x = 0, 0.025, 0.050 and 0.075) ceramics were prepared by the conventional solid-state reaction method. The partial substitution of Mn by Ni~(2+) leads to a decrease in cell volume as well as a structural transition from the rhombohedral to the orthorhombic structure. Ni~(2+) doping increases the electrical resistivity, decreases the semiconductor–metal transition temperature(Tms) and relatively enhances the room temperature magnetoresistance(MR), especially in x = 0.025 and around Tms. With respect to conduction mechanism, the small polaron hopping(SPH) and the variable range hopping(VRH) models were used to examine conduction in the semiconducting region.
引文
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