The basis of organic spintronics: Fabrication of organic spin valves
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摘要
Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve(OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La0.67Sr0.33MnO3(LSMO)/Alq3/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.
Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve(OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La0.67Sr0.33MnO3(LSMO)/Alq3/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.
Organic spintronics focuses on utilizing the spin degree of freedom in organic materials because of the long spin relaxation time. The vertical organic spin valve(OSV) is a typical sample structure used to study the spin transport phenomena. However, the fabrication of high quality OSVs is difficult, which results in controversial experiment results and hence hinders the development of organic spintronics. In this work, we describe our recent study on the fabrication of typical vertical organic spin valves, La0.67Sr0.33MnO3(LSMO)/Alq3/Co. The LSMO bottom electrodes are annealed to obtain an atomically smooth surface and improved magnetic properties. The top Co electrodes are deposited by an indirect deposition method to reduce the interfusion between Co and Alq3. The controlled fabrication process provides much better performance and sample yield of OSVs.
引文
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[50]Wang S,Yue F J,Shi J,Shi Y J,Hu A,Du Y W and D Wu 2011 Appl.Phys.Lett.98 172501
[51]Sanvito S 2011 Chem.Soc.Rev.40 3336
[2]Braga D and Horowitz G 2009 Adv.Mater.21 1473
[3]Wolf S A,Awschalom D D,Buhrman R A,Daughton J M,von Molnar S,Roukes M L,Chtchelkanova A Y and Treger D M 2001 Science 2941488
[4]Bratkovsky A M 2008 Rep.Prog.Phys.71 026502
[5]Park S K,Jackson T N,Anthony J E and Mourey D A 2007 Appl.Phys.Lett.91 063514
[6]Szulczewski G,Sanvito S and Coey M 2009 Nat.Mater.8 693
[7]Zutic I,Fabian J and Sarma S D 2004 Rev.Mod.Phys.76 323
[8]Pramanik S,Stefanita C G,Patibandla S,Bandyopadhyay S,Garre K,Harth N and Cahay M 2007 Nat.Nanotech.2 216
[9]Bass J and Pratt W P 2007 J.Phys.:Condens.Matter 19 183201
[10]Appelbaum I,Huang B and Monsma D 2007 Nature 447 295
[11]Xiong Z H,Wu D,Vardeney Z V and Shi J 2004 Nature 427 821
[12]Dediu V,Hueso L,Bergenti I and Taliani C 2009 Nat.Mater.8 707018104-6
[13]Dediu V,Murgia M,Matacotta F C,Taliani C and Barbanera S 2002Solid State Commun.122 181
[14]Wu D,Xiong Z H,Li X G,Vardeny Z V and Shi J 2005 Phys.Rev.Lett.95 016802
[15]Naber,W J M,Faez S and van der Wiel W G 2007 J.Phys.D 40 R205
[16]Sanvito S 2011 Chem.Soc.Rev.40 3336
[17]Jiang S W,Yue F J,Wang S and Wu D 2013 Sci.China-Phys.Mech.Astron.56 142
[18]Ikegami T,Kawayama I,Tonouchi M,Nakao S,Yamashita Y and Tada H 2008 Appl.Phys.Lett.92 153304
[19]Ozbay A,Nowak E R,Yu Z G,Chu W,Shi Y,Krishnamurthy S,Tang Z and Newman N 2009 Appl.Phys.Lett.95 232507
[20]Naber W J M,Craciun M F,Lemmens J H J,Arkenbout A H,Palstra T T M,Morpurgo A F and van der Wiel W G 2010 Org.Electron.11 743
[21]Burke F,Stamenov P and Coey J M D 2011 Synth.Met.161 563
[22]Park J H,Vescovo E,Kim H J,Kwon C,Ramesh R and Venkatesan T1998 Phys.Rev.Lett.81 1953
[23]Bowen M,Bibes M,Barthelemy A,Contour J P,Anane A,Lemaitre Y and Fert A 2003 Appl.Phys.Lett.82 233
[24]Wang F J,Xiong Z H,Wu D,Shi J and Vardeny Z V 2005 Syth.Metals155 172
[25]Koster G,Kropman B L,Rijnders G J H M,Blank D H and Rogalla H1998 Appl.Phys.Lett.73 2920
[26]Shi Y J,Zhou Y,Ding H F,Zhang F M,Pi L,Zhang Y H and Wu D2012 Appl.Phys.Lett.101 122409
[27]Zener C 1951 Phys.Rev.82 403
[28]Millis A J,Littlewood P B and Shraiman B I 1995 Phys.Rev.Lett.745144
[29]Millis A J 1996 Phys.Rev.B 53 8434
[30]Chen B B,Zhou Y,Wang S,Shi Y J,Ding H F and Wu D 2013 Appl.Phys.Lett.103 072402
[31]Yu T,Zhang Q T,Liu D P and Han X F 2013 Appl.Phys.Lett.102022401
[32]Tai J C,Huang J C,Chang Y M,Li K S,Hong J Y,Wong S S,Chiang W C and Lin M T 2010 Appl.Phys.Lett.96 262502
[33]Vinzelberg H,Schumann J,Elefant D,Gangineni R B,Thomas J and Bu¨hner B 2008 J.Appl.Phys.103 093720
[34]Dediu V,Hueso L E,Bergenti I,Riminucci A,Borgatti F,Graziosi P,Newby C,Casoli F,De Jong M P,Taliani C and Zhan Y 2008 Phys.Rev.B 78 115203
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[36]Sun D,Yin L,Sun C,Guo H,Gai Z,Zhang X G,Ward T Z,Cheng Z and Shen J 2010 Phys.Rev.Lett.104 236602
[37]Wang S,Shi Y J,Lin L,Chen B B,Yue F J,Du J,Ding H F,Zhang F M and Wu D 2011 Syth.Metals 161 1738
[38]Li F,Zhan Y,Lee T H,Liu X,Chikamatsu A,Guo T F,Lin H J,Huang J C A and Fahlman M 2011 J.Phys.Chem.C 115 16947
[39]Yue F J,Shi Y J,Chen B B,Ding H F,Zhang F M and Wu D 2012Appl.Phys.Lett.101 022416
[40]Steil S,Groβmann N,Laux M,Ruffing A,Steil D,Wiesenmayer M,Mathias S,Monti O L A,Cinchetti M and Aeschlimann M 2013 Nat.Phys.9 242
[41]Drew A J,Hoppler J,Schulz L,Pratt F L,Desai P,Shakya P,Kreouzis T,Gillin W P,Suter A,Morley N A,Malik V K,Dubroka A,Kim K W,Bouyanfif H,Bourqui F,Bernhard C,Scheuermann R,Nieuwenhuys G J,Prokscha T and Morenzoni E 2008 Nat.Mater.8 109
[42]Yu Z G 2011 Phys.Rev.Lett.106 106602
[43]Nguyen T D,Hukic-Markosian G,Wang F,Wojcik L,Li X G,Ehrenfreund E and Vardeny Z V 2010 Nat.Mater.9 345
[44]Johnson M and Silsbee R H 1985 Phys.Rev.Lett.55 1790
[45]Riminucci A,Prezioso M,Pernechele C,Graziosi P,Bergenti I,Cecchini R,Calbucci1 M,Solzi M and Alek Dediu V 2013 Appl.Phys.Lett.102 092407
[46]Nguyen T D,Ehrenfreund E and Vardeny Z V 2012 Science 337 204
[47]Prezioso M,Riminucci A,Bergenti I,Graziosi P,Brunel D and Dediu V A 2011 Adv.Mater.23 1371
[48]Raman K V,Kamerbeek A M,Mukherjee A,Atodiresei N,Sen T K,Lazic′P,Caciuc V,Michel R,Stalke D,Mandal S K,Blu¨gel S,Mu¨nzenberg M and Moodera J S 2013 Nature 493 509
[49]Rocha A R,Garc′a-sua′rez V M,Bailey S W,Lambert C J,Ferrer J and Sanvito S 2005 Nature Mater.4 335
[50]Wang S,Yue F J,Shi J,Shi Y J,Hu A,Du Y W and D Wu 2011 Appl.Phys.Lett.98 172501
[51]Sanvito S 2011 Chem.Soc.Rev.40 3336