高精度EGFET pH传感器检测电路设计
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摘要
设计了一种利用延伸栅极型晶体管(EGFET)检测溶液pH值的电路,包括信号采集、信号转换与处理、放大电路设计、模数转换器(ADC)及软件设计部分。实测结果表明:设计的电路在溶液pH值4~10范围内输出电压的灵敏度为39.68 m V/pH。与传统的pH玻璃电极相比,设计的传感器具有响应速度快、易于封装、对光和温度不敏感、稳定性好等特点。
A detection circuit of extended-gate field-effect-transistors(EGFET)-based pH senors is designed,including signal acquisition,signal conversion and processing,amplifier circuit design,ADC converter,and software design.The experimental result shows that the sensitivity of output voltage of circuit is 39.68 m V/pH ranging from pH = 4 to pH = 10. Compared with conventional pH glass electrodes,EGFET-based pH sensors have the characteristics of fast response,easy for encapsulation,insensitive to light and temperature,and good stability,and so on.
A detection circuit of extended-gate field-effect-transistors(EGFET)-based pH senors is designed,including signal acquisition,signal conversion and processing,amplifier circuit design,ADC converter,and software design.The experimental result shows that the sensitivity of output voltage of circuit is 39.68 m V/pH ranging from pH = 4 to pH = 10. Compared with conventional pH glass electrodes,EGFET-based pH sensors have the characteristics of fast response,easy for encapsulation,insensitive to light and temperature,and good stability,and so on.
引文
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[2]Kaisti M. Detection principles of biological and chemical FET sensors[J].Biosensors and Bioelectronics,2017,98:437-448.
[3]Chou J C,Chen C W.Fabrication and application of rutheniumdoped titanium dioxide films as electrode material for ion-sensitive extended-gate FETs[J].IEEE Sensors Journal,2009,9(3):277-284.
[4]Parizi B,Xu X,Pal A,et al.ISFET p H sensitivity:Counter-ions play a key role[J].Sci Rep,2017,7:41305.
[5]Chiu Y S,Lee C T,Lou L R,et al.Wide linear sensing sensors using Zn O:Ta extended-gate field-effect-transistors[J]. Sensors and Actuators B:Chemical,2013,188:944-948.
[6]Das A,Ko D H,Chen C H,et al.Highly sensitive palladium oxide thin film extended gate FETs as p H sensor[J]. Sensors and Actuators B:Chemical,2014,205:199-205.
[7]Batista P D,Mulato M.ZnO extended-gate field-effect transistors as pH sensors[J]. Applied Physics Letters,2005,87(14):143508.
[8]Bergveld P.Development of an ion-sensitive solid-state device for neurophysiological measurements[J]. IEEE Trans on Biomed Eng,1970,17(1):70-71.
[9]Bousse L,Van Den Vlekkert H H,De Rooij N F. Hysteresis in Al2O3-gate ISFETs[J]. Sensors and Actuators B:Chemical,1990,2(2):103-110.
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[12]Kao C H,Chen H,Lai C S,et al. Erbium oxide as pH-sensing membranes in extended gate field effect transistors[J].Advanced Science Letters,2012,17(1):122-125.
[13]Prats-Alfonso E,Abad L,Casa-Pastor N,et al.Iridium oxide pH sensor for biomedical applications.Case urea-urease in real urine samples[J]. Biosensors and Bioelectronics,2013,39(1):163-169.
[14]杨永杰,张裕胜,杨赛程,等.一种PM 2.5检测传感器的设计[J].传感器与微系统,2014,33(3):76-81.
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